Patents by Inventor Troy Detrick

Troy Detrick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • THREE-DIMENSIONAL (3D) PROCESSING AND PRINTING WITH PLASMA SOURCES
    Publication number: 20150042017
    Abstract: Embodiments include systems, apparatuses, and methods of three-dimensional plasma printing or processing. In one embodiment, a method includes introducing chemical precursors into one or more point plasma sources, generating plasma in the one or more point plasma sources from the chemical precursors with one or more power sources, and locally patterning a substrate disposed over a stage with the generated plasma by moving the stage with respect to the one or more point plasma sources.
    Type: Application
    Filed: October 25, 2013
    Publication date: February 12, 2015
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kartik RAMASWAMY, Troy DETRICK, Srinivas NEMANI, Ajey JOSHI
  • PLASMA CONTROL USING DUAL CATHODE FREQUENCY MIXING
    Publication number: 20070000611
    Abstract: A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.
    Type: Application
    Filed: September 11, 2006
    Publication date: January 4, 2007
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Steven Shannon, Dennis Grimard, Theodoros Panagopoulos, Daniel Hoffman, Michael Chafin, Troy Detrick, Alexander Paterson, Jingbao Liu, Taeho Shin, Bryan Pu
  • Plasma control using dual cathode frequency mixing
    Publication number: 20050090118
    Abstract: A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.
    Type: Application
    Filed: April 12, 2004
    Publication date: April 28, 2005
    Inventors: Steven Shannon, Dennis Grimard, Theodoros Panagopoulos, Daniel Hoffman, Michael Chafin, Troy Detrick, Alexander Paterson, Jingbao Liu, Taeho Shin, Bryan Pu
  • Inductively coupled HDP-CVD reactor
    Patent number: 6182602
    Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
    Type: Grant
    Filed: May 29, 1997
    Date of Patent: February 6, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Fred C. Redeker, Romuald Nowak, Tetsuya Ishikawa, Troy Detrick, Jay Dee Pinson, II
  • Multi-zone RF inductively coupled source configuration
    Patent number: 6083344
    Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
    Type: Grant
    Filed: May 29, 1997
    Date of Patent: July 4, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Hiroji Hanawa, Tetsuya Ishikawa, Manus Wong, Shijian Li, Kaveh Niazi, Kenneth Smyth, Fred C. Redeker, Troy Detrick, Jay Dee Pinson, II