Patents by Inventor Tsai-Pao Chiang

Tsai-Pao Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160214908
    Abstract: Disclosed is a high temperature withstand silver plated surface structure for heat dissipation ceramic substrate used to provide a surface for mounting a LED die unit on the surface of the substrate. The surface of the substrate is covered with a silver cover layer composed of a reduction nickel layer, a reduction palladium layer and a reduction silver layer stacked in order, or a reduction nickel layer, a reduction palladium layer and a replacement silver layer stacked in order. With this structure the silver layer on the substrate is able to keep away from deterioration or color change by instantaneous high temperature rise during the process of performing eutectic bonding of the flip chip LED die unit on the substrate, or by high ambient temperature caused by a long term use of the LED die unit so as to stabilize the LED quality.
    Type: Application
    Filed: January 22, 2015
    Publication date: July 28, 2016
    Inventors: Tsai-Pao CHIANG, Mao-Sung TSAO, Hsih-Hsien YANG
  • Patent number: 7733620
    Abstract: Disclosed is a chip scale gas discharge protective device whose metal coupled electrodes are fabricated through processes of yellow light, image formation, and electro casting of metal electrode, and the two electrodes are facing each other in arch lines with the distance of a gap controlled within the range of 0.5˜10 ?m, wherein the entire structure is performed by a bridge process without an extra gas filling procedure in the gap. Due to the fact that the gap is as small as only several ?m, a relevant potential difference existing across there is sufficient to ionize the air thereby suppressing the electro-static discharge (ESD) through the protected electronic device, whereas the fabrication method is disclosed.
    Type: Grant
    Filed: March 26, 2007
    Date of Patent: June 8, 2010
    Assignee: TA-I Technology Co., Ltd
    Inventors: Ho-Chieh Yu, Jiun-You Lin, Hung-Yi Chuang, Tsai-Pao Chiang
  • Publication number: 20080239610
    Abstract: Disclosed is a chip scale gas discharge protective device whose metal coupled electrodes are fabricated through processes of yellow light, image formation, and electro-casting of metal electrode, and the two electrodes are facing each other in arch lines with the distance of a gap controlled within the range of 0.5˜10 ?m, wherein the entire structure is performed by a bridge process without an extra gas filling procedure in the gap. Due to the fact that the gap is as small as only several ?m, a relevant potential difference existing across there is sufficient to ionize the air thereby suppressing the electro-static discharge (ESD) through the protected electronic device, whereas the fabrication method is disclosed.
    Type: Application
    Filed: March 26, 2007
    Publication date: October 2, 2008
    Inventors: Ho-Chieh Yu, Jiun-You Lin, Hung-Yi Chuang, Tsai-Pao Chiang