Patents by Inventor Tsang-Yang Liu

Tsang-Yang Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200381287
    Abstract: An apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
    Type: Application
    Filed: August 14, 2020
    Publication date: December 3, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu CHEN, Wei-Jen CHEN, Yi-Chen CHIANG, Tsang-Yang LIU, Chang-Sheng LEE, Wei-Chen LIAO, Wei ZHANG
  • Patent number: 10748806
    Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: August 18, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu Chen, Wei-Jen Chen, Yi-Chen Chiang, Tsang-Yang Liu, Chang-Sheng Lee, Wei-Chen Liao, Wei Zhang
  • Publication number: 20190139810
    Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
    Type: Application
    Filed: December 21, 2018
    Publication date: May 9, 2019
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu CHEN, Wei-Jen CHEN, Yi-Chen CHIANG, Tsang-Yang LIU, Chang-Sheng LEE, Wei-Chen LIAO, Wei ZHANG
  • Patent number: 10163676
    Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: December 25, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu Chen, Wei-Jen Chen, Yi-Chen Chiang, Tsang-Yang Liu, Chang-Sheng Lee, Wei-Chen Liao, Wei Zhang
  • Publication number: 20150000599
    Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
    Type: Application
    Filed: June 27, 2013
    Publication date: January 1, 2015
    Inventors: Yen-Yu Chen, Wei-Jen Chen, Yi-Chen Chiang, Tsang-Yang Liu, Chang-Sheng Lee, Wei-Chen Liao, Wei Zhang