Abstract: Disclosed is a method for preparing silver nanowire. The method includes: providing a first solution and a second solution; mixing the first solution and the second solution to obtain a third solution including a plurality of silver nanowires; and performing a purification procedure on the third solution to obtain the silver nanowires. Particularly, the first solution includes a capping agent dispersed in a first alcohol solvent, and the second solution includes a silver salt and a metal precursor dispersed in a second alcohol solvent, wherein the metal precursor has a formula: MXn or MXn.m(H2O) wherein M is Cu2+, Sn4+, or Ni2+, X is Cl?, Br?, I?, SCN?, SO42?, NO3?, or C2O42?, n is 1-4, m is 1-6, and M has a valence equal to the absolute value of the product of n and a valence of X.

Abstract: A cooling apparatus is disclosed. The cooling apparatus includes a carrier and a flat-plate type cooling conduit. The flat-plate type cooling conduit is made of a high thermal conductive material and disposed on or in the carrier. The flat-plate type cooling conduit includes a conduit portion and a flat plate portion. The conduit portion has a conducting hole for conducting a coolant, and the flat plate portion is adhered to the carrier for allowing the coolant to perform heat exchange through a large contact area between the flat plate portion and the carrier. In addition, a cooling source gel can be used to perform heat exchange with the coolant in the conducting hole in order to improve the heat exchange efficiency of the cooling apparatus, and to effectively reduce the temperature of the carrier.

Abstract: This invention relates to a negative photoresist composition with multi-reaction models. When the photoresist composition according to the present invention is used in photolithography processes employing UV light to produce cross-link reactions and multi-reactions including radical polymerization and cationic polymerization also occur. The photoresist composition can be used to control light reaction efficiency and increase reaction thoroughness, thus obtaining a high resolution pattern.

Abstract: A positive photoresist with uniform reactivity for use in a thick film lithography process, includes thermal curing during soft-baking and photo dissociation through UV exposure. The positive photoresist comprises a phenolic resin, a resin with acid labile groups, a photoacid generator (PAG), and a reactive monomer with vinyl ether or epoxy group. First, the resins react with the reactive monomer to perform a thermal curing step by soft-baking to form network polymers. In the UV lithography process, the exposed network polymers perform both deprotection and depolymerization simultaneously and are rendered alkali-soluble. The resulting photoresist patterns have a high aspect ratio and resolution profile, due to the good alkali dissolution contrast and uniform reactivity.

Abstract: A positive photoresist WITHuniform reactivity for use in a thick film lithography process, includes thermal curing during soft-baking and photo dissociation through UV exposure. The positive photoresist comprises a phenolic resin, a resin with acid labile groups, a photoacid generator (PAG), and a reactive monomer with vinyl ether or epoxy group. First, the resins react with the reactive monomer to perform a thermal curing step by soft-baking to form network polymers. In the UV lithography process, the exposed network polymers perform both deprotection and depolymerization simultaneously and are rendered alkali-soluble. The resulting photoresist patterns have a high aspect ratio and resolution profile, due to the good alkali dissolution contrast and uniform reactivity.

Abstract: A photosensitive thick film composition. The photosensitive thick film composition can produce electrode material with high resolution and high contrast. The photosensitive thick film composition includes an acrylic copolymer, a photoinitiator, a reactive monomer, a conductive metal, glass powder, an additive, and an organic solvent.

Abstract: This invention relates to a negative photoresist composition with multi-reaction models. When the photoresist composition according to the present invention is used in photolithography processes employing UV light to produce cross-link reactions and multi-reactions including radical polymerization and cationic polymerization also occur. The photoresist composition can be used to control light reaction efficiency and increase reaction thoroughness, thus obtaining a high resolution pattern.

Abstract: The present invention relates to a silicon-containing copolymer which includes a maleic anhydride repeating unit, a norbornene repeating unit, and at least one silicon group-containing norbornene repeating unit. The silicon-containing copolymer is suitable for use as a top layer resist in a bilayer resist system.

Abstract: A decomposition type resin having the formula (I): 1

Abstract: A photosensitive thick film composition. The photosensitive thick film composition can produce electrode material with high resolution and high contrast. The photosensitive thick film composition includes an acrylic copolymer, a photoinitiator, a reactive monomer, a conductive metal, glass powder, an additive, and an organic solvent.

Abstract: The present invention relates to a silicon-containing copolymer which includes a maleic anhydride repeating unit, a norbornene repeating unit, and at least one silicon group-containing norbornene repeating unit. The silicon-containing copolymer is suitable for use as a top layer resist in a bilayer resist system.

Abstract: The present invention provides a water soluble polymer which is prepared by the following steps. First, a carboxyl group-containing polymer is reacted with an alkaline reagent so that a portion of the carboxyl groups are reacted in an amount sufficient to make the polymer water soluble. Then, the polymer obtained is reacted with an epoxide containing unsaturated bonds and/or heteroatoms so that 1 to 100 mole percent of the remaining carboxyl groups of the polymer are reacted with the epoxide to form ester groups via a ring-opening reaction of epoxides, wherein the heteroatom can be silicon, nitrogen, phosphorus or sulfur. The water soluble polymer of the present invention can be used as a photosensitive resin. When the photoresist composition is used for preparing printed ciruit boards, it exhibits high photosensitivity, good water dispersability, storage stability, and good adhesion to copper. In addition, the problem of sticking to the mask can be prevented.

Abstract: A crosslinkable aqueous polyester-containing emulsion and a process for preparing the same. The emulsion is obtained by polymerizing unsaturated monomers of acrylic, using a crosslinkable, sulfonated polyester emulsifier having an acid number less than 80 mg KOH/g and an intrinsic viscosity greater than 0.1 dl/g as an emulsifier. The emulsion has the chemical characteristics of both polyester and acrylic resin, i.e. has low volatile organic compounds, good mechanical stability, and good storage stability. Since the emulsion is crosslinkable, a film formed by the emulsion has excellent adhesion, water and heat resistance. Thus, the emulsion is useful for coating and printing on Nylon, PET, OPP films, as well as for high performance industrial surface coating and adhesion for which good heat-, water-, and weather-resistance are required.