Abstract: A method of enhancing the carbon content of a carbon-containing material, which includes loading a chamber with a carbon-containing material, evacuating air from the chamber, introducing an inert gas into the chamber, and heating sequentially the chamber at three or more different temperature phases each for a duration of time such that the weight percentage of the carbon in the treated carbon-containing material is increased by 20% or higher, as compared to the untreated carbon-containing material. Further disclosed is a system for performing this method.

Abstract: A method of enhancing the carbon content of a carbon-containing material, which includes loading a chamber with a carbon-containing material, evacuating air from the chamber, introducing an inert gas into the chamber, and heating sequentially the chamber at three or more different temperature phases each for a duration of time such that the weight percentage of the carbon in the treated carbon-containing material is increased by 20% or higher, as compared to the untreated carbon-containing material. Further disclosed is a system for performing this method.

Abstract: A method of manufacturing a ceramic/metal composite structure includes the steps of: providing a ceramic substrate; forming a metal interface layer on the ceramic substrate; placing a copper sheet on the metal interface layer; heating the ceramic substrate, the metal interface layer and the copper sheet so that the metal interface layer forms strong bonds with the ceramic substrate and the copper sheet. Multiple stages of pre-oxidizing processes are performed on the copper sheet at different temperatures and in different atmospheres with different oxygen partial pressures before the copper sheet is placed on the metal interface layer. The metal interface layer provides a wetting effect for the copper sheet to the ceramic substrate at a high temperature so that the copper sheet wets a surface of the aluminum oxide.

Abstract: A method of manufacturing a ceramic/metal composite structure includes the steps of: providing a ceramic substrate; forming a metal interface layer on the ceramic substrate; placing a copper sheet on the metal interface layer; heating the ceramic substrate, the metal interface layer and the copper sheet so that the metal interface layer forms strong bonds with the ceramic substrate and the copper sheet. A ceramic/metal composite structure is also disclosed.

Abstract: A molding technique for copper interconnecting wires by electrochemical displacement deposition on the pre-shaped metal layer in accordance with the present invention is used to form an adhering layer on a substrate and a sacrificial layer on the adhering layer. The sacrificial layer is patterned according to the copper interconnecting wires and displaced to form the copper interconnecting wires in a specific chemical solution.

Abstract: Process for thin-film electroless-plated deposition onto the substrate, which is either hydrophilic or hydrophobic silicon based dielectric material (e.g., silicon dioxide, silicate glass, or polysiloxanes), is a substitute for the conventional sensitization/activation route by pre-treating the surface of the dielectric substrate by plasma (H2/N2, N2, H2, or O2), immersing the substrate in a basic aqueous solution for removing hydrogen, immersing the substrate in a basic aqueous solution of metal ions for adsorbing the metal ions thereon, reducing the metal ions on the surface of the substrate, and immersing the substrate in an electroless-plating solution to deposit an electroless-plated metal film. The substrate formed of hydrophobic polysiloxanes which is properly pretreated by gaseous plasma can be immersed in a basic solution with strong oxidizing capability and/or performing a selective pattern by plasma treatment.

Abstract: A solvent, such as deionized water, is heated up to boil to remove the oxygen dissolved in the water before preparing the plating solutions for the growth of copper interconnects. The resistance of the copper grown from the EDD solutions having undergone the oxygen-removing process is greatly improved, down to a value very close to copper's ideal value.

Abstract: A molding technique for copper interconnecting wires by electrochemical displacement deposition on the pre-shaped metal layer in accordance with the present invention is used to form an adhering layer on a substrate and a sacrificial layer on the adhering layer. The sacrificial layer is patterned according to the copper interconnecting wires and displaced to form the copper interconnecting wires in a specific chemical solution.

Abstract: An oxygen-removing pre-process for copper interconnect grown by electrochemical displacement deposition is to remove the oxygen in the reaction solution before displacement and deposition a copper film/conducting wire such that the copper film/conducting wire is grown and has a lower electric resistance.

Abstract: The present invention relates to a fast diffusion recipe for making silicon by NO complexes, which can quicken impurities diffusion by NO complexes, thus reducing effectiveness for a given period of time and cost of production. When it is used to make CMOS well, processing period would be more rapidly. Because of the produced interface depth is affected by ventilation at stage of heat treatment, and obtaining deeper depth by N2O compared with using traditional N2, it is thus clear that this recipe features application and use value.

Abstract: A method of preparing a hearth roll with a coating, including: plating a metal on a ceramic powder by using electroless plating; mixing the metal-plated ceramic powder and a metal powder to form a cement powder; and thermally spraying the cement powder onto a hearth roll. Another method is: plating a metal on a ceramic powder by using electroless plating; mixing the metal-plated ceramic powder, a metal powder, and a binder to form a slurry, and subjecting the slurry to granulating and sintering to obtain a sintered powder; and thermally spraying the sintered powder onto a hearth roll.