Abstract: A method of manufacturing an upper electrode of a plasma processing device includes forming a covering layer having plasma resistance on a surface of a main body portion constituting the upper electrode at a side of the processing space; polishing a surface of the covering layer exposed to the processing space; and after the polishing, blasting the surface of the covering layer polished at the polishing.

Abstract: A plasma processing device according to one embodiment comprises a processing vessel, a gas supply unit, a lower electrode and an upper electrode. The processing vessel defines a processing space. The gas supply unit supplies processing gas into the processing space. The lower electrode is provided below the processing space. The upper electrode is provided above the processing space, and a covering layer having plasma-resistant properties is formed on this upper electrode. The surface of this covering layer is polished.

Abstract: A plasma processing device according to one embodiment comprises a processing vessel, a gas supply unit, a lower electrode and an upper electrode. The processing vessel defines a processing space. The gas supply unit supplies processing gas into the processing space. The lower electrode is provided below the processing space. The upper electrode is provided above the processing space, and a covering layer having plasma-resistant properties is formed on this upper electrode. The surface of this covering layer is polished.

Abstract: A focus ring surrounds an outer periphery of a substrate mounted on a mounting table having a temperature control mechanism and includes a contact surface which comes into contact with the mounting table and a heat transfer sheet formed on the contact surface. The heat transfer sheet contains an organic material and a heat transfer material mixed with the organic material, and has a film thickness larger than or equal to about 40 ?m and smaller than about 100 ?m.

Abstract: A ring-shaped member is used in a chamber of a substrate processing apparatus for performing a plasma processing on a substrate by generating a plasma in the chamber. The ring-shaped member includes a plurality of circular arc-shaped members made of single crystalline material and arranged along a circumferential direction of the ring-shaped member. Each of the circular arc-shaped members includes a surface exposed to the plasma when the plasma is generated in the chamber and an easily erodible crystal plane of the single crystalline material is not exposed at the surface.