Patents by Inventor Tsukasa Yonekawa
Tsukasa Yonekawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20190041246Abstract: A sensor module is provided in which a sensor which can be more easily attached to a structure than conventionally and can also suppress variation in attachment quality. The sensor module includes an elastic layer, a sensor arranged above at last one part of the elastic layer and configured to detect a physical quantity related to the properties of a structure, and a film layer arranged above the elastic layer and attached with the sensor.Type: ApplicationFiled: September 11, 2018Publication date: February 7, 2019Applicant: DAI NIPPON PRINTING CO., LTD.Inventors: Kazuyoshi TOGASHI, Ryoichi OHIGASHI, Tsukasa YONEKAWA
-
Publication number: 20140130367Abstract: The purpose of the present invention is to make it possible to reuse drying retardant which was used for supercritical drying.Type: ApplicationFiled: September 30, 2013Publication date: May 15, 2014Applicant: DAI NIPPON PRINTING CO., LTD.Inventor: Tsukasa Yonekawa
-
Patent number: 8471573Abstract: A dynamic quantity sensor includes a first substrate, a fixed part arranged in the first substrate, a spiral shaped movable electrode arranged separated from the first substrate, one end of the spiral shaped movable electrode being supported by the fixed part, a fixed electrode positioned on the periphery of the movable electrode and arranged in a detection direction of a dynamic quantity, and a first terminal electrically connected to the fixed part and a second terminal electrically connected to the fixed electrode.Type: GrantFiled: April 13, 2012Date of Patent: June 25, 2013Assignee: Dai Nippon Printing Co., Ltd.Inventors: Masaaki Asano, Tsukasa Yonekawa
-
Publication number: 20120235694Abstract: A dynamic quantity sensor includes a first substrate, a fixed part arranged in the first substrate, a spiral shaped movable electrode arranged separated from the first substrate, one end of the spiral shaped movable electrode being supported by the fixed part, a fixed electrode positioned on the periphery of the movable electrode and arranged in a detection direction of a dynamic quantity, and a first terminal electrically connected to the fixed part and a second terminal electrically connected to the fixed electrode.Type: ApplicationFiled: April 13, 2012Publication date: September 20, 2012Applicant: DAI Nippon Printing Co., Ltd.Inventors: Masaaki ASANO, Tsukasa YONEKAWA
-
Patent number: 7625604Abstract: The present invention relates to a thermal processing method includes a first thermal processing step that carries out thermal processing steps using a plurality of first substrates, wherein thin films are formed on surfaces of the plurality of first substrates by means of less consumption of the process gas than on surfaces of production substrates. Then, a second thermal processing step carries out thermal processing steps by using a plurality of second substrates, wherein thin films are formed on surfaces of the plurality of second substrates by means of more consumption of the process gas than on the surfaces of the plurality of first substrates, and wherein heating units are respectively adjusted to respective temperature set values set during the previous step.Type: GrantFiled: August 8, 2003Date of Patent: December 1, 2009Assignee: Tokyo Electron LimitedInventors: Keisuke Suzuki, Wenling Wang, Tsukasa Yonekawa, Toshiyuki Ikeuchi, Toru Sato
-
Patent number: 7304002Abstract: A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a thermal oxidation of a nitride film. In a method for oxidation of a surface of an object to be processed in a single processing container 8 which can contain a plurality of objects to be processed, at least a nitride film is exposed on said surface, and said oxidation is performed by mainly using active hydroxyl/oxygen species in a vacuum atmosphere, setting a processing pressure to 133 Pa or below, and setting a processing temperature to 400° C. or above. Under these conditions, high interplanar uniformity is maintained and oxide films with favorable film quality are obtained by oxidizing nitride films on the surfaces of a plurality of objects to be processed.Type: GrantFiled: July 7, 2003Date of Patent: December 4, 2007Assignee: Tokyo Electron LimitedInventors: Tatsuo Nishita, Tsukasa Yonekawa, Keisuke Suzuki, Toru Sato
-
Publication number: 20060094248Abstract: A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a thermal oxidation of a nitride film. In a method for oxidation of a surface of an object to be processed in a single processing container 8 which can contain a plurality of objects to be processed, at least a nitride film is exposed on said surface, and said oxidation is performed by mainly using active hydroxyl/oxygen species in a vacuum atmosphere, setting a processing pressure to 133 Pa or below, and setting a processing temperature to 400° C. or above. Under these conditions, high interplanar uniformity is maintained and oxide films with favorable film quality are obtained by oxidizing nitride films on the surfaces of a plurality of objects to be processed.Type: ApplicationFiled: July 7, 2003Publication date: May 4, 2006Inventors: Tatsuo Nishita, Tsukasa Yonekawa, Keisuke Suzuki, Toru Sato
-
Patent number: 6972235Abstract: A method of processing a semiconductor substrate includes a step of forming a trench (16) in a surface of the substrate, by etching the substrate (W), and a step of rounding a corner (10) of the substrate formed at a mouth of the trench (16), by heat-processing the substrate (W). The step of rounding the corner (10) includes a first heat process performed in a hydrogen gas atmosphere with a process temperature T set to be 850° C.<T<1,050° C., and a process pressure P set to be 0.01 kPa<P<30 kPa.Type: GrantFiled: September 16, 2003Date of Patent: December 6, 2005Assignee: Tokyo Electron LimitedInventors: Tsukasa Yonekawa, Keisuke Suzuki
-
Publication number: 20050201894Abstract: The present invention relates to a thermal processing method including thermal processing steps having: a step of holding a plurality of substrates by means of a substrate holder, a step of conveying the substrate holder into a reaction container, a step of heating a plurality of zones of thermal process atmosphere in the reaction container by means of a plurality of heating units, respectively, and a step of forming thin films on surfaces of the plurality of substrates by introducing a process gas into the reaction container.Type: ApplicationFiled: August 8, 2003Publication date: September 15, 2005Inventors: Keisuke Suzuki, Wenling Wang, Tsukasa Yonekawa, Toshiyuki Ikeuchi, Toru Sato
-
Patent number: 6933249Abstract: A manufacturing method for semiconductor devices that can improve uniformity in the surface of a silicon nitride film or a nitride film to be formed and improve production efficiency is provided. A step of forming a first film that is a silicon oxide film or a silicon oxynitride film on a silicon substrate, a step of forming a second film that is a tetrachlorosilane monomolecular layer, and a step of forming a third film that is a silicon nitride monomolecular layer by performing a nitriding process on the second film are included. A silicon nitride film having a predetermined film thickness is formed by repeating the step of forming the second film and the step of forming the third film for a predetermined number of times. In a manufacturing apparatus, a plurality of silicon substrates are arranged on a stair-like wafer boat, and a process gas is supplied toward the upper side of a reaction tube from a process gas supply pipe.Type: GrantFiled: May 31, 2002Date of Patent: August 23, 2005Assignee: Tokyo Electron LimitedInventors: Shin Yokoyama, Anri Nakajima, Yoshihide Tada, Genji Nakamura, Masayuki Imai, Tsukasa Yonekawa
-
Publication number: 20050003629Abstract: A method of processing a semiconductor substrate includes a step of forming a trench (16) in a surface of the substrate, by etching the substrate (W), and a step of rounding a corner (10) of the substrate formed at a mouth of the trench (16), by heat-processing the substrate (W). The step of rounding the corner (10) includes a first heat process performed in a hydrogen gas atmosphere with a process temperature T set to be 850° C.<T<1,050° C., and a process pressure P set to be 0.01 kPa<P<30 kPa.Type: ApplicationFiled: September 16, 2003Publication date: January 6, 2005Inventors: Tsukasa Yonekawa, Keisuke Suzuki
-
Publication number: 20040152339Abstract: A manufacturing method for semiconductor devices that can improve uniformity in the surface of a silicon nitride film or a nitride film to be formed and improve production efficiency is provided. A step of forming a first film that is a silicon oxide film or a silicon oxynitride film on a silicon substrate, a step of forming a second film that is a tetrachlorosilane monomolecular layer, and a step of forming a third film that is a silicon nitride monomolecular layer by performing a nitriding process on the second film are included. A silicon nitride film having a predetermined film thickness is formed by repeating the step of forming the second film and the step of forming the third film for a predetermined number of times. In a manufacturing apparatus, a plurality of silicon substrates are arranged on a stair-like wafer boat, and a process gas is supplied toward the upper side of a reaction tube from a process gas supply pipe.Type: ApplicationFiled: November 26, 2003Publication date: August 5, 2004Inventors: Shin Yokoyama, Anri Nakajima, Yoshihide Tada, Genji Nakamura, Masayuki Imai, Tsukasa Yonekawa