Abstract: A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.

Abstract: A growth mask layer is formed over a semiconductor material layer on a substrate. Optionally, a patterned hard mask layer can be formed over the growth mask layer. A nano-imprint lithography (NIL) resist layer is applied, and is imprinted with a pattern of recesses by stamping. The pattern in the NIL resist layer through the growth mask layer to provide a patterned growth mask layer with clusters of openings therein. If a patterned hard mask layer is employed, the patterned hard mask can prevent transfer of the pattern in the area covered by the patterned hard mask layer. Semiconductor material portions, such as nanowires can be formed in a cluster configuration through the clusters of openings in the patterned growth mask layer. Alignment marks can be formed concurrently with formation of semiconductor material portions by employing nano-imprint lithography.

Abstract: A light emitting diode includes a first conductivity type semiconductor material region, an active region located over the first conductivity type semiconductor material region, a second conductivity type semiconductor material layer located over the active region, a first layer containing at least one of nickel or gold located over the second conductivity type semiconductor material layer, a reflective top contact electrode located over the first layer, a dielectric material layer located over the top contact electrode and containing an opening, and a reflector located over the dielectric material layer and contacting the top contact electrode through the opening in the dielectric material layer.

Abstract: A growth mask layer is formed over a semiconductor material layer on a substrate. Optionally, a patterned hard mask layer can be formed over the growth mask layer. A nano-imprint lithography (NIL) resist layer is applied, and is imprinted with a pattern of recesses by stamping. The pattern in the NIL resist layer through the growth mask layer to provide a patterned growth mask layer with clusters of openings therein. If a patterned hard mask layer is employed, the patterned hard mask can prevent transfer of the pattern in the area covered by the patterned hard mask layer. Semiconductor material portions, such as nanowires can be formed in a cluster configuration through the clusters of openings in the patterned growth mask layer. Alignment marks can be formed concurrently with formation of semiconductor material portions by employing nano-imprint lithography.

Abstract: A light emitting device includes a substrate including a doped compound semiconductor layer, a mesa structure located on the doped compound semiconductor layer and containing a first-conductivity-type compound semiconductor layer, an active layer stack configured to emit light at a peak wavelength, a second-conductivity-type compound semiconductor layer, and a transparent conductive oxide layer, and a dielectric material layer laterally surrounding the mesa structure and including an upper portion that overlies a peripheral region of the mesa structure and extending above the transparent conductive oxide layer, wherein an opening in the upper portion of the dielectric material layer is located over a center region of the mesa structure.

Abstract: A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.

Abstract: A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.

Abstract: A backplane can have a non-planar top surface. Insulating material portions including planar top surface regions located within a same horizontal plane are formed over the backplane. A two-dimensional array of metal plate clusters is formed over the insulating material portions. Each of the metal plate clusters includes a plurality of metal plates. Each metal plate includes a horizontal metal plate portion overlying a planar top surface region and a connection metal portion connected to a respective metal interconnect structure in the backplane. A two-dimensional array of light emitting device clusters is bonded to the backplane through respective bonding structures. Each light emitting device cluster includes a plurality of light emitting devices overlying a respective metal plate cluster.

Abstract: A method of forming a light emitting device includes forming a growth mask layer including openings on a doped compound semiconductor layer, forming first light emitting diode (LED) subpixels by forming a plurality of active regions and second conductivity type semiconductor material layers employing selective epitaxy processes, and transferring each first LED subpixel to a backplane. An anode contact electrode may be formed on the second conductivity type semiconductor material layers for redundancy. The doped compound semiconductor layer may be patterned with tapered sidewalls to enhance etendue. An optically clear encapsulation matrix may be formed on the doped compound semiconductor material layer to enhance etendue. Lift-off processes may be employed for the active regions. Cracking of the LEDs may be suppressed employing a thick reflector layer.

Abstract: A light emitting diode includes a first conductivity type semiconductor material region, an active region located over the first conductivity type semiconductor material region, a second conductivity type semiconductor material layer located over the active region, a first layer containing at least one of nickel or gold located over the second conductivity type semiconductor material layer, a reflective top contact electrode located over the first layer, a dielectric material layer located over the top contact electrode and containing an opening, and a reflector located over the dielectric material layer and contacting the top contact electrode through the opening in the dielectric material layer.

Abstract: A light emitting device includes a substrate including a doped compound semiconductor layer, a mesa structure located on the doped compound semiconductor layer and containing a first-conductivity-type compound semiconductor layer, an active layer stack configured to emit light at a peak wavelength, a second-conductivity-type compound semiconductor layer, and a transparent conductive oxide layer, and a dielectric material layer laterally surrounding the mesa structure and including an upper portion that overlies a peripheral region of the mesa structure and extending above the transparent conductive oxide layer, wherein an opening in the upper portion of the dielectric material layer is located over a center region of the mesa structure.

Abstract: A backplane can have a non-planar top surface. Insulating material portions including planar top surface regions located within a same horizontal plane are formed over the backplane. A two- dimensional array of metal plate clusters is formed over the insulating material portions. Each of the metal plate clusters includes a plurality of metal plates. Each metal plate includes a horizontal metal plate portion overlying a planar top surface region and a connection metal portion connected to a respective metal interconnect structure in the backplane. A two- dimensional array of light emitting device clusters is bonded to the backplane through respective bonding structures. Each light emitting device cluster includes a plurality of light emitting devices overlying a respective metal plate cluster.

Abstract: A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.

Abstract: A method of forming a light emitting device includes forming a growth mask layer including openings on a doped compound semiconductor layer, forming first light emitting diode (LED) subpixels by forming a plurality of active regions and second conductivity type semiconductor material layers employing selective epitaxy processes, and transferring each first LED subpixel to a backplane. An anode contact electrode may be formed on the second conductivity type semiconductor material layers for redundancy. The doped compound semiconductor layer may be patterned with tapered sidewalls to enhance etendue. An optically clear encapsulation matrix may be formed on the doped compound semiconductor material layer to enhance etendue. Lift-off processes may be employed for the active regions. Cracking of the LEDs may be suppressed employing a thick reflector layer.