Abstract: A patterning process includes (1) coating and baking a first positive resist composition to form a first resist film, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) applying a resist-modifying composition to the first resist pattern and heating to modify the first resist pattern, (3) coating and baking a second positive resist composition to form a second resist film, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The modified first resist film has a contact angle with pure water of 50°-85°.

Abstract: A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.

Abstract: A double pattern is formed by coating a first positive resist composition onto a substrate, patternwise exposure to radiation, and development with alkaline developer to form a first resist pattern; applying heat and/or radiation to render the first resist pattern insoluble in a second solvent and in a second developer; coating a second resist composition on the first resist pattern, patternwise exposure to radiation, and development with second developer to form a second resist pattern. The resin in the first resist composition comprises recurring units of formula (1) wherein R1 is H, CH3 or CF3, m=1 or 2, n=0 or 1.

Abstract: Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.

Abstract: Carboxyl-containing lactone compounds having formula (1) are novel wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are H or monovalent hydrocarbon groups, or R2 and R3 may together form an aliphatic ring, W is CH2, O or S, k1 is an integer of 0 to 4, and k2 is 0 or 1. They are useful as monomers to produce polymers which are transparent to radiation?500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent properties including resolution, LER, pattern density dependency and exposure margin.

Abstract: A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R1 is H, methyl or trifluoromethyl, m is 1 or 2, and the hydroxyl group attaches to a tertiary carbon atom. The composition is improved in resolution when processed by lithography.

Abstract: Fluorinated monomers of formula (1) are useful in producing polymers for the formulation of radiation-sensitive resist compositions.

Abstract: A polymer for resist use is prepared by previously charging a reactor with a solution containing a chain transfer agent and holding at a polymerization temperature, and continuously or discontinuously adding dropwise a solution containing monomers and a polymerization initiator to the reactor for radical polymerization. The polymer has a minimized content of a substantially insoluble component. A resist composition using the polymer as a base resin produces a minimized number of defects when processed by photolithography and is useful in forming microscopic patterns.

Abstract: A pattern is formed by (1) coating a first positive resist composition onto a substrate, baking, patternwise exposing, PEB, and developing to form a first positive resist pattern including a large area feature, (2) applying a resist-modifying composition comprising a basic nitrogen-containing compound and heating to modify the first resist pattern, and (3) coating a second positive resist composition thereon, patternwise exposing, and developing to form a second resist pattern. The large area feature in the first resist pattern has a film retentivity of at least 50% after the second pattern formation.

Abstract: Lactone-containing compounds having formula (1) are novel wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are monovalent hydrocarbon groups, or R2 and R3 may together form an aliphatic hydrocarbon ring, R4 is H or CO2R5, R5 is a monovalent hydrocarbon group, W is CH2, O or S, and k1 is 0 or 1. They are useful as monomers to produce polymers which are transparent to radiation?500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent properties including resolution, pattern edge roughness, pattern density dependency and exposure margin.

Abstract: Fluoroalcohol compounds of formula (4) are prepared by reacting a fluorine compound of formula (1) with reducing agents or organometallic reagents of formulas (2) and (3) wherein R1 is H or a monovalent C1-C20 hydrocarbon group in which any —CH2— moiety may be replaced by —O— or —C(?O)—, R2 is H or a monovalent C1-C6 hydrocarbon group, R3 and R4 are H or a monovalent C1-C8 hydrocarbon group, and M1 is Li, Na, K, Mg, Zn, Al, B, or Si. From the fluoroalcohol compounds, fluorinated monomers can be produced in a simple and economic way, which are useful in producing polymers for the formulation of radiation-sensitive resist compositions.

Abstract: A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. Resin component (A) is a polymer comprising recurring units of formula (1) wherein R1 is H, CH2 or CF3, R2 is an acid labile group, R3 is H or CO2CH3, X is O, S, CH2 or CH2CH2, 0.01?a<1 and 0.01?b<1. When processed by ArF lithography, the composition forms a pattern with a satisfactory mask fidelity and a minimal LWR.

Abstract: A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist-modifying composition comprises a carbamate compound and a solvent.

Abstract: A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.

Abstract: Lactone-containing compounds having formula (1) are novel wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are H or monovalent hydrocarbon groups, or R2 and R3 may together form an aliphatic hydrocarbon ring, R4 is H or CO2R5, R5 is a monovalent hydrocarbon group, W is CH2, O or S, and k1 is 3, 4 or 5. They are useful as monomers to produce polymers which are transparent to radiation ?500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent properties including resolution, LER, pattern density dependency and exposure margin.

Abstract: A patterning process includes (1) coating and baking a first positive resist composition to form a first resist film, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) applying a resist-modifying composition to the first resist pattern and heating to modify the first resist pattern, (3) coating and baking a second positive resist composition to form a second resist film, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The modified first resist film has a contact angle with pure water of 50°-85°.

Abstract: An acetal compound of formula (1) is provided wherein R1 is H, methyl or trifluoromethyl, R2 is a monovalent C1-C10 hydrocarbon group, R3 and R4 are H or a monovalent C1-C10 hydrocarbon group, R2 and R3 may together form an aliphatic hydrocarbon ring, and X1 is a single bond or a divalent C1-C4 hydrocarbon group. A polymer comprising recurring units derived from the acetal compound is used as a base resin to formulate a resist composition which exhibits a high resolution when processed by micropatterning technology, especially ArF lithography.

Abstract: In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.

Abstract: A polymer is provided comprising recurring units having formulas (1), (2), (3), (4), (5), and (6) in amounts of 1-60 mol % (1), 1-60 mol % (2), 1-50 mol % (3), 0-60 mol % (4), 0-30 mol % (5), and 0-30 mol % (6), and having a Mw of 3,000-30,000 and a Mw/Mn of 1.5-2.5. R1, R3, R4, R7, R9, and R11 are H or CH3, Y is methylene or O, R2 is CO2R10 when Y is methylene and R2 is H or CO2R10 when Y is O, R10 is C1-C15 alkyl which may be separated by O, R5 and R6 are H or OH, R8 is a tertiary ester type acid-labile protective group, and R12 is OH-containing fluoroalkyl. A resist composition comprising the polymer has a high resolution and is improved in line edge roughness and I/G bias.

Abstract: A novel lactone-containing compound is provided as well as a polymer comprising units of the compound. The polymer is used as a base resin to formulate a resist composition having a high sensitivity, resolution and etching resistance.