Abstract: In a nozzle unit 4 equipped with processing-liquid nozzles 4A to 4J, an air layer 73 and a solvent layer 74 for processing liquid are successively formed outside a processing-liquid layer 71 included in the tip of each nozzle 4A (4B to 4J). Next, the solvent layer 74 in the nozzle 4A is thrown out into a drain part 62 of a standby unit 6 and subsequently, the processing liquid is supplied from the nozzle 4A to the surface of a wafer W, performing a coating process. After completing the coating process, the processing liquid remaining in the nozzle 4A is sucked and continuously, respective tips of the nozzles 4A to 4J are dipped into respective solvents in solvent reservoir 62A to 62J, respectively. From this state, by sucking in the nozzle 4A, there are newly formed, outside the processing layer 71 in the tip of the nozzle 4A, an air layer 73 and a solvent layer 74.

Abstract: In a nozzle unit 4 equipped with processing-liquid nozzles 4A to 4J, an air layer 73 and a solvent layer 74 for processing liquid are successively formed outside a processing-liquid layer 71 included in the tip of each nozzle 4A (4B to 4J). Next, the solvent layer 74 in the nozzle 4A is thrown out into a drain part 62 of a standby unit 6 and subsequently, the processing liquid is supplied from the nozzle 4A to the surface of a wafer W, performing a coating process. After completing the coating process, the processing liquid remaining in the nozzle 4A is sucked and continuously, respective tips of the nozzles 4A to 4J are dipped into respective solvents in solvent reservoir 62A to 62J, respectively. From this state, by sucking in the nozzle 4A, there are newly formed, outside the processing layer 71 in the tip of the nozzle 4A, an air layer 73 and a solvent layer 74.

Abstract: A semiconductor manufacturing apparatus includes a transfer mechanism including a moving part for holding a substrate to be processed and moving along a longitudinal transferring passage and a plurality of processing units for performing respective processes on the substrate. The processing units are disposed along the transferring passage and the substrate is transferred between the processing units and the transfer mechanism. An exhaust chamber is provided under the processing units, the exhaust chamber having a gas exhaust opening at the side of the transferring passage, the exhaust chamber. Further, a suction exhaust line is connected to the exhaust chamber, and a guide member is provided inside the exhaust chamber or at a position facing the opening, wherein the guide member extends along the transferring passage.

Abstract: In the present invention, a plurality of exhaust paths connected to a plurality of cup bodies surrounding substrate holding portions respectively are joined together for common use, and the openings of exhaust rate adjustment sections provided on the exhaust paths are adjusted with reference to data in which combinations of the numbers of rotations of the substrate holding portions are associated with combinations of set exhaust rates of the exhaust paths when solution treatment is performed by rotating the substrate by the substrate holding portion. According to the present invention, the cup body can be exhausted at an intended exhaust rate at all times independently of the state where the substrate in which cup body is subjected to which process.