Patents by Inventor Tsuneo Ihara

Tsuneo Ihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6765352
    Abstract: A photocathode and an electron tube in which the photocathode plate can be securely fixed without using any adhesive. Even under the severe condition that a high vibration resistance is required or thermal stress occurs because of great temperature variation, it can be used widely for an image intensifier, a streak tube, or a photomultiplier. The photocathode plate of the photocathode is sandwiched between a faceplate and a support plate. First pins embedded in the faceplate are joined to the support plate. Therefore, the photocathode plate can be readily fixed securely to the faceplate without using any adhesive.
    Type: Grant
    Filed: January 30, 2003
    Date of Patent: July 20, 2004
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Akihiko Ohtomo, Tsuneo Ihara, Kuniyoshi Mori, Yoshiyuki Natsume
  • Publication number: 20030146698
    Abstract: A photocathode and an electron tube in which the photocathode plate can be securely fixed without using any adhesive. Even under the severe condition that a high vibration resistance is required or thermal stress occurs because of great temperature variation, it can be used widely for an image intensifier, a streak tube, or a photomultiplier. The photocathode plate of the photocathode is sandwiched between a faceplate and a support plate. First pins embedded in the faceplate are joined to the support plate. Therefore, the photocathode plate can be readily fixed securely to the faceplate without using any adhesive.
    Type: Application
    Filed: January 30, 2003
    Publication date: August 7, 2003
    Inventors: Akihiko Ohtomo, Tsuneo Ihara, Kuniyoshi Mori, Yoshiyuki Natsume
  • Patent number: 5138191
    Abstract: A junction, such as a Schottky junction, is formed between a conductive electrode and a semiconductor. A bias voltage is applied between the conductive electrode and an outward-emission-side electrode formed on the semiconductor at the side opposite to the junction. Upon illumination, photoelectrons are internally emitted in the conductive electrode into the semiconductor, transported through the semiconductor, and emitted outward from the semiconductor surface, which has been so treated as to reduce the surface barrier height. The semiconductor is semi-insulating, or a p-n junction is formed therein.
    Type: Grant
    Filed: July 2, 1990
    Date of Patent: August 11, 1992
    Assignee: Hamamatsu Photonics K. K.
    Inventors: Yoshihiko Mizushima, Toru Hirohata, Tsuneo Ihara, Minoru Niigaki, Kenichi Sugimoto, Koichiro Oba, Toshihiro Suzuki, Tomoko Suzuki