Abstract: The present invention provides an MR element bar that permits the fabrication of MR elements in which a variation in characteristics is suppressed, as well as an MR element bar exposure method and formation method enabling the fabrication of the MR element bar. The MR element bar exposure method according to the present invention comprises the steps of: detecting the positions of a plurality of alignment marks P1 to P4 formed on a wafer W; correcting an exposure position correction region R on the basis of the positions of detected alignment marks P1? to P4?; and exposing a resist which is formed on the wafer W, wherein an MR element bar region B comprises a plurality of MR elements (patterns MRE) aligned in the longitudinal direction of the region B, and one exposure position correction region R is established for one MR element bar region B.

Abstract: In the method of making a thin-film magnetic head in accordance with the present invention, an alignment mark is electrically connected to a multilayer film which will later become a TMR film. Therefore, when the alignment mark is irradiated with a position correcting electron beam in order to correct a drawing position in the subsequent step of electron beam lithography, electric charges of the electron beam flow into the multilayer film without staying in the alignment mark. As a consequence, the position correcting electron beam does not lose its straightforwardness, whereby the drawing position in electron beam lithography can be corrected accurately.

Abstract: In the method of making a thin-film magnetic head in accordance with the present invention, an electron beam resist is irradiated with electron beams in a state where an electrically conductive member is in contact with a magnetoresistive film. Since the magnetoresistive film electrically connects individual forming positions to be formed with magnetoresistive devices, charges stored near the forming positions upon irradiation with the electron beams can be drawn to the outside by way of the electrically conductive member. As a consequence, the electron beams are less likely to lose their rectilinearity, whereby the writing precision for patterning the magnetoresistive film by electron beam lithography can be improved.

Abstract: The present invention provides an MR element bar that permits the fabrication of MR elements in which a variation in characteristics is suppressed, as well as an MR element bar exposure method and formation method enabling the fabrication of the MR element bar. The MR element bar exposure method according to the present invention comprises the steps of: detecting the positions of a plurality of alignment marks P1 to P4 formed on a wafer W; correcting an exposure position correction region R on the basis of the positions of detected alignment marks P1′ to P4′; and exposing a resist which is formed on the wafer W, wherein an MR element bar region B comprises a plurality of MR elements (patterns MRE) aligned in the longitudinal direction of the region B, and one exposure position correction region R is established for one MR element bar region B.

Abstract: In the method of making a thin-film magnetic head in accordance with the present invention, an alignment mark is electrically connected to a multilayer film which will later become a TMR film. Therefore, when the alignment mark is irradiated with a position correcting electron beam in order to correct a drawing position in the subsequent step of electron beam lithography, electric charges of the electron beam flow into the multilayer film without staying in the alignment mark. As a consequence, the position correcting electron beam does not lose its straightforwardness, whereby the drawing position in electron beam lithography can be corrected accurately.

Abstract: In the method of making a thin-film magnetic head in accordance with the present invention, an electron beam resist is irradiated with electron beams in a state where an electrically conductive member is in contact with a magnetoresistive film. Since the magnetoresistive film electrically connects individual forming positions to be formed with magnetoresistive devices, charges stored near the forming positions upon irradiation with the electron beams can be drawn to the outside by way of the electrically conductive member. As a consequence, the electron beams are less likely to lose their rectilinearity, whereby the writing precision for patterning the magnetoresistive film by electron beam lithography can be improved.

Abstract: A method for forming a pattern in a resist is provided. A resist is formed on a surface of a substrate. A first portion of the resist is exposed to a charged particle beam, such as an electron beam, to alter a first characteristic of the first portion of the resist. A second portion of the resist is exposed to electromagnetic radiation, such as UV light, to alter a second characteristic of the second portion of the resist. The second portion is larger than the first portion. At least part of the first portion is removed using the altered characteristics of the resist such that a remaining portion defines the pattern in the resist. Using this method, fine pattern resists having less than 100 nm resolution may be created at high throughput rates.

Abstract: A lithium secondary cell includes a negative electrode, a positive electrode, and a non-aqueous lithium-containing electrolyte solution. The negative and/or positive electrode includes a current collector, an underlying layer, and an electrode layer. The underlying layer is formed of a thermoset composition comprising carbon black, a thermosetting fluorinated polymer, and a crosslinking agent or a radiation-cured composition comprising carbon black, a radiation-curable polymer, and optionally a radiation-curable compound. The underlying layer is effective for maintaining firm adhesion between the current collector and the electrode layer during repetitive charge/discharge cycles.

Abstract: A main object of the invention is to provide a lithium secondary cell which experiences minimal capacity deterioration upon repetitive charge-discharge cycles.The lithium secondary cell of the invention is characterized in that a negative and/or positive electrode material is bonded to a current collector surface by a binder containing a crosslinked polymer or formed by coating to a current collector a composition comprising an active material and a polymer binder containing a fluorinated polymer which is curable upon exposure to radiation, followed by radiation curing treatment.

Abstract: In a method for magnetically recording and reproducing signals in and from a magnetic recording medium via a thin film magnetic head, the recording medium has a magnetic layer of up to 0.5 .mu.m thick containing hexagonal ferromagnetic particles on a non-magnetic substrate, and the magnetic head includes a recording head whose gap adjacent portion is formed of a soft magnetic material having a saturation magnetic flux density of at least 0.7 T and a reproducing MR head. In one form, the magnetic layer has a surface roughness (Ra) of up to 5 nm, and a coercivity (Hc) of at least 1,100 Oe and a squareness ratio (S) of at least 0.70. In another form, the magnetic layer contains hexagonal ferrite and has a squareness ratio (S.perp.) of at least 0.70, and the magnetic head produces a reproduction output which is subject to zero-crossing detection without passing through a differential circuit.

Abstract: A magnetic recording medium includes a coated type of magnetic layer containing magnetic powders substantially made up of hexagonal ferrite particles and a binder, and has the values ofSQR.sub.x .gtoreq.0.50SQR.sub.y .ltoreq.0.35where SQR.sub.x is the squareness ratio of said magnetic layer in the recording track direction, and SQR.sub.y is the intra-surface squareness ratio of said magnetic layer in the direction perpendicular to the recording track direction, and has also the value of.alpha..gtoreq.3%where .alpha. is given by.alpha.=I(006).times.