Abstract: A method of forming a layered coating film includes: coating a workpiece with an electrodeposition coating material to form an electrodeposition coating layer; applying a colored coating material including a white pigment over the electrodeposition coating layer to form two or more colored coating layers that are layered on the electrodeposition layer; and applying a clear coating material over the two or more colored coating layers. The colored coating material includes coating materials respectively applied to form a lower-side colored coating layer and an upper-side colored coating layer of the two or more colored coating layers. A concentration of the white pigment in the coating material applied to form the lower-side colored coating layer is equal to or higher than a concentration of the white pigment included in the coating material applied to form the upper-side colored coating layer.

Abstract: A method of forming a layered coating film includes: coating a workpiece with an electrodeposition coating material to form an electrodeposition coating layer; applying a colored coating material including a white pigment over the electrodeposition coating layer to form two or more colored coating layers that are layered on the electrodeposition layer; and applying a clear coating material over the two or more colored coating layers. The colored coating material includes coating materials respectively applied to form a lower-side colored coating layer and an upper-side colored coating layer of the two or more colored coating layers. A concentration of the white pigment in the coating material applied to form the lower-side colored coating layer is equal to or higher than a concentration of the white pigment included in the coating material applied to form the upper-side colored coating layer.

Abstract: A planar type semiconductor device having a high breakdown voltage, including a diffusion region of a P type formed in a semiconductor layer of an N type, a guard ring region of the P type formed in the semiconductor layer and surrounding the diffusion layer, and an insulating film covering the surface of the semiconductor layer between the diffusion and guard ring region. A field plate is provided which is kept at a potential equal to that of the diffusion region. The field plate covers the entire surface of that portion of the insulating film which is between the diffusion and guard ring regions.

Abstract: A light-activated bi-directional thyristor of a planar structure having P type base layers for first and second thyristors in a light receiving section, the P type base layers being separated from each other by an N type base layer. An N type emitter layer is formed at that part of the P type base layer for the second thyristor which is located on the side of the light receiving section. A first auxiliary electrode is laminated to the N type emitter layer to form an amplifying gate section. A second auxiliary electrode is formed on the P type base layer which is located opposite the light receiving section. On-current of the amplifying gate section is supplied to a shorted emitter in the second thyristor, through a connector for electrically connecting the first and second auxiliary electrodes.