Abstract: A vaporizing apparatus for generating a process gas from a liquid material includes a vaporizing container defining a vaporizing space of the vaporizing apparatus; an injector connected to the vaporizing container to spray the liquid material in an atomized state into the vaporizing space; and a heater attached to the vaporizing container to heat the liquid material sprayed in the vaporizing space. The vaporizing apparatus further includes a gas delivery passage connected to the vaporizing container to output from the vaporizing space a generation gas generated from the liquid material; a filter disposed inside the gas delivery passage or between the gas delivery passage and the vaporizing space to trap mist contained in the generation gas; and an infrared irradiation mechanism configured to irradiate the filter with infrared rays.

Abstract: A semiconductor manufacturing apparatus according to the present invention comprises: a treating unit that treats a substrate to manufacture thereon a semiconductor device; a fluid supplying channel for supplying a fluid required for a treatment of the substrate to the treating unit; a set voltage outputting unit that outputs a set voltage corresponding to a set flow volume of the fluid; a massflow controller disposed on the fluid supplying channel, that controls a flow volume of the fluid based on the set voltage; a first shut-off valve disposed on the fluid supplying channel on an upstream side of the massflow controller; and a second shut-off valve disposed on the fluid supplying channel on a downstream side of the massflow controller.

Abstract: Zero point shift based on thermal siphon effect occurring actually when a substrate is processed is detected accurately and corrected suitably. The semiconductor fabrication system comprises a gas supply passage (210) for supplying gas into a heat treatment unit (110), an MFC (240) for comparing an output voltage from a detecting unit for detecting the gas flow rate of the gas supply passage with a set voltage corresponding to a preset flow rate and controlling the gas flow rate of the gas supply passage to the set flow rate, and a control unit (300).

Abstract: A vaporizing apparatus for generating a process gas from a liquid material includes a vaporizing container defining a vaporizing space of the vaporizing apparatus; an injector connected to the vaporizing container to spray the liquid material in an atomized state into the vaporizing space; and a heater attached to the vaporizing container to heat the liquid material sprayed in the vaporizing space. The vaporizing apparatus further includes a gas delivery passage connected to the vaporizing container to output from the vaporizing space a generation gas generated from the liquid material; a filter disposed inside the gas delivery passage or between the gas delivery passage and the vaporizing space to trap mist contained in the generation gas; and an infrared irradiation mechanism configured to irradiate the filter with infrared rays.

Abstract: A vaporizer for generating a process gas from a gas-liquid mixture fluid includes a container defining a process space of the vaporizer. A supply head having a plurality of spray holes to spray the fluid is disposed within the container. A heating passage is disposed below the spray holes within the container. The heating passage is configured to heat the fluid passing therethrough and thereby generate the process gas. A gas delivery passage is connected to the container to laterally deliver the process gas from below the heating passage. A mist receiver is provided at the container below the gas delivery passage.

Abstract: A vaporizer for generating a process gas from a liquid material includes a heat-exchange lower block having a hollow internal space and disposed below the spray port of an injector inside the container. A run-up space for the atomized liquid material is defined between the spray port and the heat-exchange lower block, and an annular space continuous to the run-up space is defined between an inner surface of the container and the heat-exchange lower block. An internal heater is disposed in the internal space of the heat-exchange lower block and includes a carbon wire formed of woven bundles of carbon fibers and sealed in a ceramic envelope. The internal heater is configured to heat the atomized liquid material flowing through the annular space to generate the process gas.

Abstract: A thin film forming apparatus 1 comprises a reaction chamber 2, and an exhaust pipe 5 connected with the reaction chamber 2. A fluorine introducing pipe 17c and a hydrogen introducing pipe 17d are connected with the reaction chamber 2, in order to supply a cleaning gas containing fluorine gas and hydrogen gas into the reaction chamber 2 or into the exhaust pipe 5. The hydrogen introducing pipe 17d includes an inner fluid passage 174 and an outer fluid passage 175 formed to cover around the inner fluid passage 174. The hydrogen gas is supplied through the inner fluid passage 174, while nitrogen gas is supplied through the outer fluid passage 175. Thus, the hydrogen gas to be fed through the inner fluid passage can be supplied from the hydrogen introducing pipe 17d, while being covered with the nitrogen gas.

Abstract: A method for using a film formation apparatus for a semiconductor process forms a first atmosphere inside an upstream gas passage between a gas supply source of a halogen acidic gas and a flow rate controller. The first atmosphere is set for the halogen acidic gas to have an average molecular weight of 20 or more and 23 or less. Further, the using method supplies the halogen acidic gas from the gas supply source through the upstream gas passage having the first atmosphere thus formed and the flow rate controller, thereby supplying a cleaning gas containing the halogen acidic gas into a reaction chamber of the film formation apparatus. A by-product film deposited on an inner surface of the reaction chamber is etched and removed by use of the cleaning gas thus supplied.

Abstract: To provide a purge gas unit and a purge gas supply integrated unit having a smaller foot space, the purge gas unit comprises an input block for input of purge gas into the purge gas unit, the input block including a purge passage formed through the input block to provide an opening in a side surface of the input block and an input passage formed branching off from the purge passage; an output block for output of the purge gas from the purge gas unit; a communication block connected to the input block and the output block to provide communication between the input block and the output block.

Abstract: A liquid raw material supply unit for a vaporizer is adapted to supply a liquid raw material to the vaporizer that vaporizes the liquid raw material.

Abstract: Branch piping (18) branches off from the upstream side of opening/closing valves (13d, 14d) provided near the entrance of a processing chamber (11) of a gas supply system for supplying a processing gas, and the branch piping (18) is connected to gas discharge piping (17). In the branch piping (18) are provided a gas flow rate detection mechanism (19) and opening/closing valves (13h, 14h) for switching a flow path between the processing chamber (11) side and the branch piping (18) side. The gas flow rate detection mechanism (19) causes a gas to flow through a resistance body to measure a pressure across the resistance body, detecting a gas flow rate from the pressure difference. Mass flow controllers (13a, 14a) are tested or corrected by the detected value.

Abstract: A liquid raw material supply unit for a vaporizer is adapted to supply a liquid raw material to the vaporizer that vaporizes the liquid raw material.

Abstract: A semiconductor processing system includes a gas supply system configured to supply water vapor into a process chamber that accommodates a target substrate. The gas supply system is provided with a gas generating apparatus for generating water vapor from purified water. The gas generating apparatus includes a first vaporizing section configured to spray the purified water along with a carrier gas and heat the purified water, so as to generate preparatory water vapor containing mist, and a second vaporizing section configured to vaporize mist contained in the preparatory water vapor, so as to generate process water vapor from the preparatory water vapor. In the second vaporizing section, a thin film having a mesh structure is disposed across a passage for the preparatory water vapor and configured to trap mist between the first vaporizing section and the process chamber.

Abstract: A vaporizer for generating a process gas from a liquid material includes a container defining a process space of the vaporizer, and an injector having a spray port configured to spray the liquid material in an atomized state downward in the container. A lower block is disposed below the spray port inside the container such that a run-up space for the atomized liquid material is defined between the spray port and the lower block, and an annular space continuous to the run-up space is defined between an inner surface of the container and the lower block. First and second heaters are respectively provided to the container and the lower block, and configured to heat the atomized liquid material flowing through the annular space to generate the process gas. A gas delivery passage is connected to the container to output the process gas from the annular space.

Abstract: A semiconductor manufacturing apparatus according to the present invention comprises: a treating unit that treats a substrate to manufacture thereon a semiconductor device; a fluid supplying channel for supplying a fluid required for a treatment of the substrate to the treating unit; a set voltage outputting unit that outputs a set voltage corresponding to a set flow volume of the fluid; a massflow controller disposed on the fluid supplying channel, that controls a flow volume of the fluid based on the set voltage; a first shut-off valve disposed on the fluid supplying channel on an upstream side of the massflow controller; and a second shut-off valve disposed on the fluid supplying channel on a downstream side of the massflow controller.

Abstract: A vaporizer for generating a process gas from a gas-liquid mixture fluid includes a container defining a process space of the vaporizer. A supply head having a plurality of spray holes to spray the fluid is disposed within the container. A heating passage is disposed below the spray holes within the container. The heating passage is configured to heat the fluid passing therethrough and thereby generate the process gas. A gas delivery passage is connected to the container to laterally deliver the process gas from below the heating passage. A mist receiver is provided at the container below the gas delivery passage.

Abstract: Each of lines A, B is provided on each of opposite sides thereof with a tape heater 11, and a space for positioning a tape heater holding clip 13 therein is provided in each of locations between adjacent fluid control devices. The tape heaters 11 are held from opposite sides thereof to the line by the clip 13. The lines A, B provided with the heaters are each mounted on a line support member 10 removably attached to a base member 1. The line support member 10 has a heater insertion bore 14 formed therein and extending longitudinally thereof. A sheath heater 12 is inserted into the bore 14.

Abstract: Shutoff valves are placed in parts of the process gas supply lines at positions near the processing vessel. A main purge gas supply line branches into branch purge gas supply lines, each of which is provided with an orifice called sonic nozzle. The branch purge gas supply lines are connected to parts of the process gas supply lines extending between the shutoff valves and the processing vessel. The ratio P1/P2, where P1 is primary pressure on the primary side of the orifice and P2 is secondary pressure on the secondary side of the orifice, is controlled to be not less than a predetermined value, for example, two, thereby, the purge gas can always be supplied at equal flow rates into the process gas supply lines. The total flow rate of the purge gas is controlled by a mass flow controller placed in the main purge gas supply line.

Abstract: A thermal processing unit of the present invention includes: a reaction container which an object to be processed is conveyed into and from; a process-gas introducing part for introducing a process gas into the reaction container; a replacement-gas introducing part for introducing a replacement gas into the reaction container, the replacement-gas introducing part being independent of the process-gas introducing part; and a discharging part for discharging a gas in the reaction container. A controlling part is connected to the process-gas introducing part, the replacement-gas introducing part and the discharging part.

Abstract: A thermal processing unit of the present invention includes: a reaction container which an object to be processed is conveyed into and from; a process-gas introducing part for introducing a process gas into the reaction container; a replacement-gas introducing part for introducing a replacement gas into the reaction container, the replacement-gas introducing part being independent of the process-gas introducing part; and a discharging part for discharging a gas in the reaction container. A controlling part is connected to the process-gas introducing part, the replacement-gas introducing part and the discharging part.