Patents by Inventor Tsung-Hsi WANG
Tsung-Hsi WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10797209Abstract: A chip scale packaging (CSP) light emitting diode (LED) device includes a flip-chip LED semiconductor die and a beam shaping structure (BSS) to form a monochromatic CSP LED device. A photoluminescent structure can be disposed on the LED semiconductor die to form a phosphor-converted white-light CSP LED device. The BSS is fabricated by dispersing light scattering particles with concentration equal to or less than 30% by weight into a polymer resin material, and is disposed adjacent to the edge portion of the photoluminescent structure or the LED semiconductor die; or disposed remotely above the photoluminescent structure or the LED semiconductor die. The BSS disposed at the edge portion of the device can reduce the edge-emitting light of the device; while the BSS disposed at the top portion of the device can reduce the top-emitting light of the device, therefore shaping the radiation pattern and the viewing angle of the device.Type: GrantFiled: February 2, 2017Date of Patent: October 6, 2020Assignee: Maven Optronics Co., Ltd.Inventors: Chieh Chen, Tsung-Hsi Wang
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Patent number: 10763404Abstract: A light emitting device, including an LED semiconductor die, a photoluminescent structure and a reflector, is disclosed. The photoluminescent structure with a beveled edge surface is disposed on top of the LED semiconductor die, wherein a lower surface of the photoluminescent structure adheres to an upper surface of the LED semiconductor die. A reflective resin material is disposed surrounding edge surfaces of the LED semiconductor die and the photoluminescent structure forming a beveled reflector. A method to manufacture the above light emitting device is also disclosed. Advantages of this light emitting device with beveled reflector include increasing the light extraction efficiency, making the viewing angle tunable, improving spatial color uniformity and reducing the light source etendue realized in a compact form-factor size.Type: GrantFiled: September 29, 2016Date of Patent: September 1, 2020Assignee: Maven Optronics Co., Ltd.Inventors: Chieh Chen, Tsung-Hsi Wang
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Patent number: 10707391Abstract: A monochromatic chip-scale packaging (CSP) light emitting diode (LED) device with an asymmetrical radiation pattern, including a flip-chip LED semiconductor die, and a reflective structure, is disclosed. A white-light broad-spectrum CSP LED device with asymmetrical radiation pattern is also disclosed by further including a photoluminescent structure in the CSP LED device. The photoluminescent structure covers at least the upper surface of the LED semiconductor die. The reflective structure adjacent to the LED semiconductor die and the photoluminescent structure reflects at least partial light beam emitted from the edge surface of the LED semiconductor die or the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically. A method to fabricate the aforementioned CSP LED device is also disclosed.Type: GrantFiled: January 17, 2019Date of Patent: July 7, 2020Assignee: Maven Optronics Co., Ltd.Inventors: Chieh Chen, Tsung-Hsi Wang
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Patent number: 10693046Abstract: A Chip-Scale Packaging (CSP) LED device and a method of manufacturing the same are disclosed. The CSP LED device includes a flip-chip LED semiconductor die and a packaging structure, wherein the packaging structure comprises a soft buffer layer, a photoluminescent structure and an encapsulant structure. The soft buffer layer includes a top portion formed on top of the flip-chip LED semiconductor die, and an edge portion formed covering an edge surface of the flip-chip LED semiconductor die, wherein the top portion has a convex surface, and the edge portion has an extension surface smoothly adjoining the convex surface. The photoluminescent structure is formed on the soft buffer layer covering the convex surface and the extension surface of the soft buffer layer. The encapsulant structure, which has a hardness not lower than that of the buffer layer, is formed on the photoluminescent structure.Type: GrantFiled: December 22, 2016Date of Patent: June 23, 2020Assignee: Maven Optronics CO., LTD.Inventors: Chieh Chen, Tsung-Hsi Wang
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Patent number: 10615320Abstract: A chip-scale packaging (CSP) LED device, comprising an LED semiconductor die and a packaging structure, is disclosed. The LED semiconductor die is encapsulated by the packaging structure, wherein the lower surface of the packaging structure has a recessed space underneath. A manufacturing method of the CPS LED device is also disclosed.Type: GrantFiled: January 9, 2017Date of Patent: April 7, 2020Assignee: MAVEN OPTRONICS CO., LTD.Inventors: Chieh Chen, Tsung-Hsi Wang, Junwei Chung
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Patent number: 10522728Abstract: A chip-scale packaging (CSP) light-emitting device (LED), including a light-emitting semiconductor die, a photoluminescent layer, a chip-side-spacer structure, and a beveled chip reflective structure, is disclosed. The beveled reflective structure is disposed surrounding the chip-edge surfaces of the light-emitting semiconductor die, wherein the chip-side-spacer structure is disposed between the beveled reflective structure and the chip-edge surfaces of the light-emitting semiconductor die. A manufacturing method to fabricate the CSP LED is also disclosed. The CSP LED with a beveled chip reflector can effectively reflect the light radiated from the light-emitting semiconductor die toward the photoluminescent layer so that the light extraction efficiency is improved.Type: GrantFiled: January 22, 2018Date of Patent: December 31, 2019Assignee: MAVEN OPTRONICS CO., LTD.Inventors: Chieh Chen, Tsung-Hsi Wang
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Publication number: 20190157530Abstract: A monochromatic chip-scale packaging (CSP) light emitting diode (LED) device with an asymmetrical radiation pattern, including a flip-chip LED semiconductor die, and a reflective structure, is disclosed. A white-light broad-spectrum CSP LED device with asymmetrical radiation pattern is also disclosed by further including a photoluminescent structure in the CSP LED device. The photoluminescent structure covers at least the upper surface of the LED semiconductor die. The reflective structure adjacent to the LED semiconductor die and the photoluminescent structure reflects at least partial light beam emitted from the edge surface of the LED semiconductor die or the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically. A method to fabricate the aforementioned CSP LED device is also disclosed.Type: ApplicationFiled: January 17, 2019Publication date: May 23, 2019Applicant: MAVEN OPTRONICS CO., LTD.Inventors: Chieh CHEN, Tsung-Hsi WANG
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Patent number: 10230030Abstract: A monochromatic chip-scale packaging (CSP) light emitting diode (LED) device with an asymmetrical radiation pattern, including a flip-chip LED semiconductor die, and a reflective structure, is disclosed. A white-light broad-spectrum CSP LED device with asymmetrical radiation pattern is also disclosed by further including a photoluminescent structure in the CSP LED device. The photoluminescent structure covers at least the upper surface of the LED semiconductor die. The reflective structure adjacent to the LED semiconductor die and the photoluminescent structure reflects at least partial light beam emitted from the edge surface of the LED semiconductor die or the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically. A method to fabricate the aforementioned CSP LED device is also disclosed.Type: GrantFiled: January 26, 2017Date of Patent: March 12, 2019Assignee: MAVEN OPTRONICS CO., LTD.Inventors: Chieh Chen, Tsung-Hsi Wang
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Publication number: 20180212118Abstract: A chip-scale packaging (CSP) light-emitting device (LED), including a light-emitting semiconductor die, a photoluminescent layer, a chip-side-spacer structure, and a beveled chip reflective structure, is disclosed. The beveled reflective structure is disposed surrounding the chip-edge surfaces of the light-emitting semiconductor die, wherein the chip-side-spacer structure is disposed between the beveled reflective structure and the chip-edge surfaces of the light-emitting semiconductor die. A manufacturing method to fabricate the CSP LED is also disclosed. The CSP LED with a beveled chip reflector can effectively reflect the light radiated from the light-emitting semiconductor die toward the photoluminescent layer so that the light extraction efficiency is improved.Type: ApplicationFiled: January 22, 2018Publication date: July 26, 2018Applicant: MAVEN OPTRONICS CO., LTD.Inventors: Chieh CHEN, Tsung-Hsi WANG
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Publication number: 20170229621Abstract: A chip scale packaging (CSP) light emitting diode (LED) device includes a flip-chip LED semiconductor die and a beam shaping structure (BSS) to form a monochromatic CSP LED device. A photoluminescent structure can be disposed on the LED semiconductor die to form a phosphor-converted white-light CSP LED device. The BSS is fabricated by dispersing light scattering particles with concentration equal to or less than 30% by weight into a polymer resin material, and is disposed adjacent to the edge portion of the photoluminescent structure or the LED semiconductor die; or disposed remotely above the photoluminescent structure or the LED semiconductor die. The BSS disposed at the edge portion of the device can reduce the edge-emitting light of the device; while the BSS disposed at the top portion of the device can reduce the top-emitting light of the device, therefore shaping the radiation pattern and the viewing angle of the device.Type: ApplicationFiled: February 2, 2017Publication date: August 10, 2017Inventors: Chieh CHEN, Tsung-Hsi WANG
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Publication number: 20170222107Abstract: A monochromatic chip-scale packaging (CSP) light emitting diode (LED) device with an asymmetrical radiation pattern, including a flip-chip LED semiconductor die, and a reflective structure, is disclosed. A white-light broad-spectrum CSP LED device with asymmetrical radiation pattern is also disclosed by further including a photoluminescent structure in the CSP LED device. The photoluminescent structure covers at least the upper surface of the LED semiconductor die. The reflective structure adjacent to the LED semiconductor die and the photoluminescent structure reflects at least partial light beam emitted from the edge surface of the LED semiconductor die or the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically. A method to fabricate the aforementioned CSP LED device is also disclosed.Type: ApplicationFiled: January 26, 2017Publication date: August 3, 2017Inventors: Chieh CHEN, Tsung-Hsi WANG
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Publication number: 20170200870Abstract: A chip-scale packaging (CSP) LED device, comprising an LED semiconductor die and a packaging structure, is disclosed. The LED semiconductor die is encapsulated by the packaging structure, wherein the lower surface of the packaging structure has a recessed space underneath. A manufacturing method of the CPS LED device is also disclosed.Type: ApplicationFiled: January 9, 2017Publication date: July 13, 2017Inventors: Chieh Chen, Tsung-Hsi Wang, Junwei Chung
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Publication number: 20170194538Abstract: A Chip-Scale Packaging (CSP) LED device and a method of manufacturing the same are disclosed. The CSP LED device includes a flip-chip LED semiconductor die and a packaging structure, wherein the packaging structure comprises a soft buffer layer, a photoluminescent structure and an encapsulant structure. The soft buffer layer includes a top portion formed on top of the flip-chip LED semiconductor die, and an edge portion formed covering an edge surface of the flip-chip LED semiconductor die, wherein the top portion has a convex surface, and the edge portion has an extension surface smoothly adjoining the convex surface. The photoluminescent structure is formed on the soft buffer layer covering the convex surface and the extension surface of the soft buffer layer. The encapsulant structure, which has a hardness not lower than that of the buffer layer, is formed on the photoluminescent structure.Type: ApplicationFiled: December 22, 2016Publication date: July 6, 2017Inventors: Chieh CHEN, Tsung-Hsi WANG
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Publication number: 20170098743Abstract: A light emitting device, including an LED semiconductor die, a photoluminescent structure and a reflector, is disclosed. The photoluminescent structure with a beveled edge surface is disposed on top of the LED semiconductor die, wherein a lower surface of the photoluminescent structure adheres to an upper surface of the LED semiconductor die. A reflective resin material is disposed surrounding edge surfaces of the LED semiconductor die and the photoluminescent structure forming a beveled reflector. A method to manufacture the above light emitting device is also disclosed. Advantages of this light emitting device with beveled reflector include increasing the light extraction efficiency, making the viewing angle tunable, improving spatial color uniformity and reducing the light source etendue realized in a compact form-factor size.Type: ApplicationFiled: September 29, 2016Publication date: April 6, 2017Applicant: MAVEN OPTRONICS CO., LTD.Inventors: Chieh CHEN, Tsung-Hsi WANG