Patents by Inventor Tsung-Hsiao Lin

Tsung-Hsiao Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrostatic discharge protection apparatus
    Patent number: 11430783
    Abstract: The electrostatic discharge (ESD) protection apparatus includes a first well, a second well, a first doping region, and a second doping region. The first well is disposed in a substrate having a first conductivity type, wherein the first well has a second conductivity type and the substrate is electrically connected to a first pad. The second well is disposed in the first well, wherein the second well has the first conductivity type. The first doping region is disposed in the second well, wherein the first doping region has the second conductivity type, and the first doping region is electrically connected to a second pad. The second doping region is disposed in the second well, wherein the second doping region has the first conductivity type.
    Type: Grant
    Filed: January 17, 2020
    Date of Patent: August 30, 2022
    Assignee: Faraday Technology Corp.
    Inventors: Chia-Ku Tsai, Tsung-Hsiao Lin
  • ELECTROSTATIC DISCHARGE PROTECTION APPARATUS
    Publication number: 20210066286
    Abstract: The electrostatic discharge (ESD) protection apparatus includes a first well, a second well, a first doping region, and a second doping region. The first well is disposed in a substrate having a first conductivity type, wherein the first well has a second conductivity type and the substrate is electrically connected to a first pad. The second well is disposed in the first well, wherein the second well has the first conductivity type. The first doping region is disposed in the second well, wherein the first doping region has the second conductivity type, and the first doping region is electrically connected to a second pad. The second doping region is disposed in the second well, wherein the second doping region has the first conductivity type.
    Type: Application
    Filed: January 17, 2020
    Publication date: March 4, 2021
    Applicant: Faraday Technology Corp.
    Inventors: Chia-Ku Tsai, Tsung-Hsiao Lin