Patents by Inventor Tsung-Hsien Yang
Tsung-Hsien Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240129167Abstract: A communication receiver includes a first signal processing circuit and a second signal processing circuit. The first signal processing circuit includes a first feedforward equalizer and a decision circuit. The first feedforward equalizer processes a received signal to generate a first equalized signal. The decision circuit performs hard decision upon the first equalized signal to generate a first symbol decision signal. The second signal processing circuit includes a second feedforward equalizer, a decision feedforward equalizer, and a first decision feedback equalizer. The second feedforward equalizer processes the first equalized signal to generate a second equalized signal. The decision feedforward equalizer processes the first symbol decision signal to generate a third equalized signal. The first decision feedback equalizer generates a second symbol decision signal according to the second equalized signal and the third equalized signal.Type: ApplicationFiled: September 18, 2023Publication date: April 18, 2024Applicant: MEDIATEK INC.Inventors: Chung-Hsien Tsai, Che-Yu Chiang, Yu-Ting Liu, Tsung-Lin Lee, Chia-Sheng Peng, Ting-Ming Yang
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Publication number: 20240115681Abstract: Provided is a pharmaceutical composition including an active pharmaceutical ingredient, a toll-like receptor (TLR) agonist, a stimulator of interferon genes (STING) agonist, and a pharmaceutically acceptable carrier. Also provided are a method for inducing immune response and a method for treating or preventing cancer or an infectious disease, including administering an effective amount of the pharmaceutical composition to a subject in need thereof.Type: ApplicationFiled: September 28, 2023Publication date: April 11, 2024Applicant: National Health Research InstitutesInventors: Tsung-Hsien Chuang, Jing-Xing Yang, Jen-Chih Tseng, Zaida Nur Imana, Ming-Hsi Huang, Guann-Yi Yu
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Patent number: 11955245Abstract: A method and a system for mental index prediction are provided. The method includes the following steps. A plurality of images of a subject person are obtained. A plurality of emotion tags of the subject person in the images are analyzed. A plurality of integrated emotion tags in a plurality of predetermined time periods are calculated according to the emotion tags respectively corresponding to the images. A plurality of preferred features are determined according to the integrated emotion tags. A mental index prediction model is established according to the preferred features to predict a mental index according to the emotional index prediction model.Type: GrantFiled: July 2, 2021Date of Patent: April 9, 2024Assignees: Acer Incorporated, National Yang Ming Chiao Tung UniversityInventors: Chun-Hsien Li, Szu-Chieh Wang, Andy Ho, Liang-Kung Chen, Jun-Hong Chen, Li-Ning Peng, Tsung-Han Yang, Yun-Hsuan Chan, Tsung-Hsien Tsai
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Patent number: 11955444Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first conductive structure disposed within a first layer of the semiconductor structure. The semiconductor structure includes a dielectric structure disposed within a second layer of the semiconductor structure, with the second layer being disposed on the first layer. The semiconductor structure includes a second conductive structure disposed within a recessed portion of the dielectric structure that extends to the first conductive structure, with the second conductive structure having a concave recessed portion on a top surface of the second conductive structure. The semiconductor structure includes multiple layers of conductive material disposed within the concave recessed portion of the second conductive structure.Type: GrantFiled: October 13, 2021Date of Patent: April 9, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Manikandan Arumugam, Tsung-Yi Yang, Chien-Chih Chen, Mu-Han Cheng, Kuo-Hsien Cheng
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Publication number: 20240084135Abstract: A resin composition and uses thereof are provided. The resin composition includes: (A) an epoxy resin; (B) a bismaleimide resin; and (C) a first flame retardant having a structure of formula (I): Wherein Ar is a C3 to C18 heteroaryl or a C6 to C18 aryl; R1 is H or a C1 to C18 alkyl; and R2 and R3 are independently H, a C1 to C18 alkyl, a C3 to C18 heteroaryl, or a C6 to C18 aryl.Type: ApplicationFiled: December 7, 2022Publication date: March 14, 2024Inventors: Tsung-Hsien LIN, Shur-Fen LIU, Pin CHIEN, Kai-Cheng YANG
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Publication number: 20220397813Abstract: A projection device configured to project an image in a projection direction is provided. The projection device includes a housing and a projection module. The housing has an air inlet and an air outlet, wherein the air inlet, the air outlet and the projection direction are in the same direction. The projection module is disposed inside the housing. The projection direction and a direction of gravity are in the same direction.Type: ApplicationFiled: April 26, 2022Publication date: December 15, 2022Applicant: Qisda CorporationInventors: Tsung-Hsien YANG, Yu-Ting LIOU
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Publication number: 20210217930Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.Type: ApplicationFiled: March 31, 2021Publication date: July 15, 2021Inventors: Yi-Ming CHEN, Tsung-Hsien YANG
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Patent number: 10998468Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.Type: GrantFiled: October 16, 2018Date of Patent: May 4, 2021Assignee: Epistar CorporationInventors: Yi-Ming Chen, Tsung-Hsien Yang
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Patent number: 10418412Abstract: A semiconductor device, comprises a semiconductor stack comprising a first area and a second area, wherein the second area comprises a first side wall, a first isolation path formed between the first area and the second area, a second isolation path formed in the semiconductor stack, an isolation layer formed in the first isolation path and covering the first side wall, an electrical contact layer formed under the semiconductor stack, and an electrode contact layer directly contacting the electrical contact layer.Type: GrantFiled: July 23, 2018Date of Patent: September 17, 2019Assignee: EPISTAR CORPORATIONInventors: Tsung-Hsien Yang, Han-Min Wu, Jhih-Sian Wang, Yi-Ming Chen, Tzu-Ghieh Hsu
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Publication number: 20190051798Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.Type: ApplicationFiled: October 16, 2018Publication date: February 14, 2019Inventors: Yi-Ming CHEN, Tsung-Hsien YANG
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Publication number: 20180331151Abstract: A semiconductor device, comprises a semiconductor stack comprising a first area and a second area, wherein the second area comprises a first side wall, a first isolation path formed between the first area and the second area, a second isolation path formed in the semiconductor stack, an isolation layer formed in the first isolation path and covering the first side wall, an electrical contact layer formed under the semiconductor stack, and an electrode contact layer directly contacting the electrical contact layer.Type: ApplicationFiled: July 23, 2018Publication date: November 15, 2018Inventors: Tsung-Hsien YANG, Han-Min WU, Jhih-Sian WANG, Yi-Ming CHEN, Tzu-Ghieh HSU
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Patent number: 10098010Abstract: A communication method for an extending device in a communication system includes transmitting or receiving a first traffic flow and a second traffic flow from a station of the communication system in a first frequency band; transmitting or receiving the first traffic flow and the second traffic flow from an access point of the communication system in the first frequency band; and transmitting or receiving the second traffic flow from the access point in a second frequency band.Type: GrantFiled: May 10, 2016Date of Patent: October 9, 2018Assignee: MEDIATEK INC.Inventors: Hao-Hua Kang, Chia-Hsiang Hsu, Pei-Huang Chang, Ying-You Lin, Tsung-Hsien Yang
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Patent number: 10038030Abstract: A light-emitting diode comprises: a first light-emitting structure, comprising: a first area comprising a side wall; a second area; and a first isolation path having an electrode isolation layer between the first area and the second area, wherein the side wall of the first area is in the first isolation path; an electrode contact layer covering the side wall of the first area, wherein the electrode contact layer is separated from electrode isolation layer; an electrical connecting structure covering the second area; and an electrical contact layer under the electrical connecting structure, wherein the electrical contact layer directly contacts the electrical connecting structure; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer.Type: GrantFiled: October 26, 2017Date of Patent: July 31, 2018Assignee: EPISTAR CORPORATIONInventors: Tsung-Hsien Yang, Han-Min Wu, Jhih-Sian Wang, Yi-Ming Chen, Tzu-Ghieh Hsu
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Publication number: 20180145222Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.Type: ApplicationFiled: December 28, 2017Publication date: May 24, 2018Inventors: Yi-Ming CHEN, Tsung-Hsien YANG
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Publication number: 20180047779Abstract: A light-emitting diode comprises: a first light-emitting structure, comprising: a first area comprising a side wall; a second area; and a first isolation path having an electrode isolation layer between the first area and the second area, wherein the side wall of the first area is in the first isolation path; an electrode contact layer covering the side wall of the first area, wherein the electrode contact layer is separated from electrode isolation layer; an electrical connecting structure covering the second area; and an electrical contact layer under the electrical connecting structure, wherein the electrical contact layer directly contacts the electrical connecting structure; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer.Type: ApplicationFiled: October 26, 2017Publication date: February 15, 2018Inventors: Tsung-Hsien YANG, Han-Min WU, Jhih-Sian WANG, Yi-Ming CHEN, Tzu-Ghieh HSU
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Patent number: 9887321Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.Type: GrantFiled: November 18, 2014Date of Patent: February 6, 2018Assignee: Epistar CorporationInventors: Yi-Ming Chen, Tsung-Hsien Yang
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Patent number: 9825087Abstract: A light-emitting diode is provided. The light-emitting diode comprises: a first light-emitting structure, comprising: a first area; a second area; a first isolation path having an electrode isolation layer between the first area and the second area; an electrode contact layer covering the first area; and an electrical connecting structure covering the second area; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and the electrode contact layer covers a sidewall of the first area.Type: GrantFiled: January 26, 2016Date of Patent: November 21, 2017Assignee: EPISTAR CORPORATIONInventors: Tsung-Hsien Yang, Han-Min Wu, Jhih-Sian Wang, Yi-Ming Chen, Tzu-Ghieh Hsu
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Patent number: 9641222Abstract: A device may include a memory for storing a set of instructions associated with at least one of an orientation and a position of the device. The device may also include a near field communication (NFC) transceiver for pairing the device with a second device. A processor in the device determines that the device is paired with the second device via the NFC transceiver; determines at least one of the orientation and the position of the device; and executes the set of instructions associated with at least one of the determined orientation and position of the device.Type: GrantFiled: May 29, 2014Date of Patent: May 2, 2017Assignee: Symbol Technologies, LLCInventors: Tsung-Hsien Yang, Hughes Cheng, Ching-Rung Lee, Michael A Tramontano
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Publication number: 20160338065Abstract: A communication method for an extending device in a communication system includes transmitting or receiving a first traffic flow and a second traffic flow from a station of the communication system in a first frequency band; transmitting or receiving the first traffic flow and the second traffic flow from an access point of the communication system in the first frequency band; and transmitting or receiving the second traffic flow from the access point in a second frequency band.Type: ApplicationFiled: May 10, 2016Publication date: November 17, 2016Inventors: Hao-Hua Kang, Chia-Hsiang Hsu, Pei-Huang Chang, Ying-You Lin, Tsung-Hsien Yang
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Patent number: 9478698Abstract: A light-emitting device is disclosed and comprises: a transparent substrate; a semiconductor light-emitting stack on the transparent substrate, wherein the semiconductor light-emitting stack comprises a first semiconductor layer close to the transparent substrate, a second semiconductor layer away from the transparent substrate, and a light-emitting layer capable of emitting a light disposed between the first semiconductor layer and the second semiconductor layer; and a bonding layer between the transparent substrate and the semiconductor light-emitting stack, wherein the bonding layer has a gradually changed refractive index, and each of critical angles at the bonding layer and the transparent substrate for the light emitted from the light-emitting layer towards the transparent substrate is larger than 35 degrees.Type: GrantFiled: February 6, 2014Date of Patent: October 25, 2016Assignee: EPISTAR CORPORATIONInventors: Tsung-Hsien Yang, Tzu-Chieh Hsu, Yi-Ming Chen, Yi-Tang Lai, Jhih-Jheng Yang, Chih-Wei Wei, Ching-Sheng Chen, Shih-I Chen, Chia-Liang Hsu, Ye-Ming Hsu