Abstract: A package structure of a common-source common-gate gallium nitride field-effect transistor is disclosed, including a lead frame. A gallium nitride field-effect transistor and a metal oxide semiconductor are directly disposed on the lead frame. The gallium nitride field-effect transistor includes a first matrix directly disposed on the lead frame. A first drain, a first gate, and a first source are disposed on a surface side of the first matrix, and the first drain and the first gate are separately electrically connected to the lead frame. The metal oxide semiconductor includes a second matrix directly disposed on the lead frame. A second drain, a second gate, and a second source are disposed on a surface side of the second matrix, the second drain is directly electrically connected to the first source, and the second gate and the second source are separately electrically connected to the lead frame.

Abstract: A package structure of a common-source common-gate gallium nitride field-effect transistor is disclosed, including a lead frame. A gallium nitride field-effect transistor and a metal oxide semiconductor are directly disposed on the lead frame. The gallium nitride field-effect transistor includes a first matrix directly disposed on the lead frame. A first drain, a first gate, and a first source are disposed on a surface side of the first matrix, and the first drain and the first gate are separately electrically connected to the lead frame. The metal oxide semiconductor includes a second matrix directly disposed on the lead frame. A second drain, a second gate, and a second source are disposed on a surface side of the second matrix, the second drain is directly electrically connected to the first source, and the second gate and the second source are separately electrically connected to the lead frame.

Abstract: An application structure of a gallium nitride field-effect transistor in a dimmer circuit is disclosed, including an LED module, a power supply circuit, a current holding circuit, and a drive circuit. The power supply circuit includes a power supply, a dimmer unit, and a rectifier circuit. The current holding circuit is electrically connected to the rectifier circuit, includes a first control switch, a capacitor capable of charging and discharging, and a plurality of resistors whose current is set, and is configured to provide a stable current to the dimmer unit. The first control switch is provided with a gallium nitride field-effect transistor. The drive circuit is electrically connected to the current holding circuit, includes a second control switch, a screen flicker prevention chip electrically connected to the LED module, and a plurality of resistors whose current is set, and is configured to stably drive the LED module to emit light.

Abstract: The LED light bulb includes a housing, a bulb holder, at least one LED illuminating member disposed in the housing for comprehensive and effective illumination, and a driver board that is disposed in the bulb holder and has a gallium nitride transistor. The LED illuminating member includes a plurality of LED chips, without reflectors, packaged and arranged in a staggering manner for comprehensive and effective illumination. Through the gallium nitride transistor having the advantages of high efficiency, high frequency and low load cycle power conversion, the LED illuminating member has better illuminating performance and can reduce the size of its driver board. The driver board can be installed in a conventional lamp, without the limitation of the size of the driver board.

Abstract: An LED driving structure includes an LED module, a power supply circuit, a voltage stabilizing circuit, a temperature compensation circuit and a gallium nitride field-effect transistor that are electrically connected. The power supply circuit is configured to supply a current to the LED module. The voltage stabilizing circuit includes a rectifying diode, a resistor and a Zener diode, and is connected to a gate of the gallium nitride field-effect transistor through the temperature compensation circuit for providing a stable voltage. The temperature compensation circuit includes at least one resistor, a thermistor and a transistor connected to the gate of the gallium nitride field-effect transistor for the LED module after being energized to maintain its power stably when there are voltage fluctuations and temperature fluctuations.

Abstract: A method for manufacturing a touch panel includes the following steps. A mother plate is provided. A plurality of adhesive materials are formed on the mother plate. A plurality of cover glasses are disposed on the adhesive materials respectively. The adhesive materials are cured, whereby the cover glasses are attached to the mother plate. A plurality of circuit units are formed on the cover glasses respectively. The cover glass having the circuit unit is removed from the mother plate, wherein the bonding strength of the cured adhesive material is within a range about between 5 g/25 mm and 600 g/25 mm, whereby the adhesive material provides enough adhesive force between the cover glass and the mother plate, and the adhesive material cannot be stayed on a surface of the cover glass during a removing process.

Abstract: A method for manufacturing a touch panel includes the following steps. A mother plate is provided. A plurality of adhesive materials are formed on the mother plate. A plurality of cover glasses are disposed on the adhesive materials respectively. The adhesive materials are cured, whereby the cover glasses are attached to the mother plate. A plurality of circuit units are formed on the cover glasses respectively. The cover glass having the circuit unit is removed from the mother plate, wherein the bonding strength of the cured adhesive material is within a range about between 5 g/25 mm and 600 g/25 mm, whereby the adhesive material provides enough adhesive force between the cover glass and the mother plate, and the adhesive material cannot be stayed on a surface of the cover glass during a removing process.