Abstract: An integrated circuit (IC) is provided. The IC includes a molding compound, a plurality of pins, an exposed pad, a die surrounded by the molding compound, an adhesive material, and a plurality of bonding wires. The pins are disposed on at least one edge of the molding compound and separated from each other. The adhesive material is disposed between the die and the exposed pad and surrounded by the molding compound. The exposed pad is electrically connected to the die through one of the bonding wires, and the pins are electrically connected to the die through the remaining bonding wires. The die is configured to detect whether a chassis intrusion event is present in response to a signal from the exposed pad.

Abstract: An embodiment of an IC is provided. The IC includes a memory, a controller, an intrusion detector and a memory clear circuit. The memory is configured to store sensitive data. The controller is configured to access the memory. The intrusion detector is configured to detect whether an intrusion event is present in response to an input signal. The memory clear circuit is configured to clear the sensitive data of the memory when the intrusion detector detects the intrusion event.

Abstract: A computer system consists of a plurality of electronic elements and a switch control circuit. The switch control circuit controls the computer system to enter a stand-by/power off state from a normal state when the computer system receives a stand-by/power off command under the normal state, and stops outputting a stand-by power having at least one stand-by voltage level to at least one part of electronic elements among the plurality of electronic elements. At this time, the computer system has entered a simulated mechanical off state from the stand-by/power off state. A number of electronic elements supplied by the stand-by power when the computer system lies under the simulated mechanical off state is smaller than a number of electronic elements supplied by the stand-by power when the computer system lies under the stand-by/power off state.

Abstract: The present invention provides a current control apparatus applied to a transistor. The transistor has a control terminal, a first terminal, and a second terminal. The current control apparatus includes a current control module, a first current mirror module, a second current mirror module, a current subtractor, and a current adjusting module. The current control apparatus provided by the present invention can be applied to a bipolar junction transistor (BJT) to prevent temperature measurement errors from occurring when using a dual current mode temperature measurement method to measure the temperature of the BJT.

Abstract: A controlling circuit for controlling an operating clock of a logic circuit in an electronic device and the method thereof are disclosed. The controlling circuit includes a storage device, a detector, at least one comparator, and a controller. The storage device stores a first threshold value and a first return value. The detector detects a system load of the electronic device to generate a detection value. The comparator compares the detection value with the first threshold value or the first return value. When the detection value decreases to reach the first threshold value, the comparator generates a first indication signal. When the detection value increase to reach the first return value, the comparator generates a second indication signal. The controller enables underclocking of the logic circuit when receiving the first indication signal, and disables underclocking of the logic circuit when receiving the second indication signal.

Abstract: The present invention provides a current control apparatus applied to a transistor. The transistor has a control terminal, a first terminal, and a second terminal. The current control apparatus includes a current control module, a first current mirror module, a second current mirror module, a current subtractor, and a current adjusting module. The current control apparatus provided by the present invention can be applied to a bipolar junction transistor (BJT) to prevent temperature measurement errors from occurring when using a dual current mode temperature measurement method to measure the temperature of the BJT.