Abstract: An electrodeposition process of platinum and platinum-based alloy nano-particles with addition of ethylene glycol is disclosed. An acidic solution which contains metal chloride includes at least one platinum-based chloride and the alloy thereof, and ethylene glycol are introduced into a reactor as an electrodeposition solution. By applying an external negative potential, platinum particles or platinum-based alloy particles are deposited on the substrate. The above acidic solution is able to provide ionic conductivity during electrodeposition. The added ethylene glycol effectively enhances the removal of chlorine from metal chlorides. Meanwhile, ethylene glycol is used as stabilizer to prevent the particles from aggregation onto the substrate, thereby increasing the dispersion of deposited particles.

Abstract: The present invention generally relates to an electroplating solution for manufacturing nanometer platinum and platinum based alloy particles and a method thereof. That is, an acid solution having platinum complex compound and citric acid is provided into a reaction tank to be as an electroplating solution, then a plurality of platinum and platinum based alloy particles are deposited on the surfaces of electrodes under the condition of applying negative potentials. The acid solution is capable of effectively providing the rate of conducting ions. The citric acid can effectively promote the dispersity of the platinum and platinum based alloy particles and reduce the dimensions the platinum and platinum based alloy particles.

Abstract: An electrodeposition process of platinum and platinum-based alloy nano-particles with addition of ethylene glycol is disclosed. An acidic solution which contains metal chloride includes at least one platinum-based chloride and the alloy thereof, and ethylene glycol are introduced into a reactor as an electrodeposition solution. By applying an external negative potential, platinum particles or platinum-based alloy particles are deposited on the substrate. The above acidic solution is able to provide ionic conductivity during electrodeposition. The added ethylene glycol effectively enhances the removal of chlorine from metal chlorides. Meanwhile, ethylene glycol is used as stabilizer to prevent the particles from aggregation onto the substrate, thereby increasing the dispersion of deposited particles.

Abstract: A process for growing a carbon nanotube directly on a carbon fiber includes at least the steps of depositing a metallic film of at least 1 nm in thickness on at least one surface of a flake-shaped carbon-fiber substrate; placing the substrate into a reactor; introducing a gas including carbon-containing substances into the reactor as a carbon source needed for growing a plurality of carbon nanotubes (CNTs); and thermally cracking the carbon-containing substances in the gas to grow the carbon nanotubes directly on the substrate.

Abstract: A damascene copper electroplating process with low-pressure pre-processing for fabricating interconnect structures on wafers comprising the following steps: a. closing two control valves to stop circulation of a plating solution; b. conveying a wafer to be plated on a predetermined location in a hallow container; c. venting the hallow container until the pressure inside the hallow container reaching a predetermined low pressure and then dipping the wafer into the plating solution; d. introducing external air until the pressure inside the hallow container reaching standard value; e. opening the two control valves to re-circulate the plating solution; f. repeating steps a to e for next wafer. The new process can reduce void defects and gap defects on wafers.

Abstract: A damascene copper electroplating process with low-pressure pre-processing for fabricating interconnect structures on wafers comprising the following steps: a. closing two control valves to stop circulation of a plating solution; b. conveying a wafer to be plated on a predetermined location in a hallow container; c. venting the hallow container until the pressure inside the hallow container reaching a pre-determined low pressure and then dipping the wafer into the plating solution; d. introducing external air until the pressure inside the hallow container reaching standard value; e. opening the two control valves to re-circulate the plating solution; f. repeating steps a to e for next wafer. The new process can reduce void defects and gap defects on wafers.