Abstract: A protecting method for preventing solder crack failure in an electronic product is provided. Firstly, a step (a) is performed to confirm that a crack incidence rate of a metallic solder material in a printed circuit board is high. In a step (b), a protecting mechanism of controlling the electronic product to enter an idle mode and leave the idle mode is activated. Consequently, an operating temperature of the electronic product decreases at a first average drop rate.

Abstract: A gas detection and cleaning system for a vehicle is disclosed and includes an external modular base, a gas detection module and a cleaning device. The gas detection module is connected to a first external connection port of the external modular base to detect a gas in the vehicle and output the information datum. The information datum is transmitted through the first external connection port to a driving and controlling module of the external modular base, processed and converted into an actuation information datum for being externally outputted through a second external connection port of the external modular base. The cleaning device is connected with the second external connection port through an external port to receive the actuation information datum outputted from the second external connection port to actuate or close the cleaning device.

Abstract: A gas detection purification device is disclosed and includes a main body, a purification unit, a gas guider, a gas detection module and a controlling-driving module. The main body includes an inlet, an outlet, an external socket and a gas-flow channel disposed between the inlet and the outlet. The purification unit is disposed in the gas-flow channel for filtering gas introduced through the gas-flow channel. The gas guider is disposed in the gas channel and located at a side of the purification unit. The gas is inhaled through the inlet, flows through the purification unit and is discharged out through the outlet. The gas detection module is plugged into or detached from the external socket. The controlling driving module is disposed within the main body and electrically connected to the gas guider to control the operation of the gas guider in an enabled state and a disabled state.

Abstract: A blood pressure detection device manufactured by a semiconductor process includes a substrate, a microelectromechanical element, a gas-pressure-sensing element, a driving-chip element, an encapsulation layer and a valve layer. The substrate includes inlet apertures. The microelectromechanical element and the gas-pressure-sensing element are stacked and integrally formed on the substrate. The encapsulation layer is encapsulated and positioned on the substrate. A flowing-channel space is formed above the microelectromechanical element and the gas-pressure-sensing element. The encapsulation layer includes an outlet aperture in communication with an airbag. The driving-chip element controls the microelectromechanical element, the gas-pressure-sensing element and valve units to transport gas.

Abstract: A method of manufacturing a semiconductor structure is provided. The method includes providing a first substrate including a plurality of conductive bumps disposed over the first substrate; providing a second substrate; disposing a patterned adhesive over the first substrate, wherein at least a portion of the plurality of conductive bumps is exposed through the patterned adhesive; bonding the first substrate with the second substrate; and singulating a chip from the first substrate.

Abstract: A method of manufacturing a semiconductor structure is provided. The method includes providing a first substrate including a plurality of conductive bumps disposed over the first substrate; providing a second substrate; disposing a patterned adhesive over the first substrate, wherein at least a portion of the plurality of conductive bumps is exposed through the patterned adhesive; bonding the first substrate with the second substrate; and singulating a chip from the first substrate.

Abstract: A method of manufacturing a semiconductor structure includes receiving a first substrate including an IMD layer disposed over the first substrate and a plurality of conductive bumps disposed in the IMD layer; receiving a second substrate; disposing a patterned adhesive over the first substrate, wherein at least a portion of the IMD layer is exposed through the patterned adhesive; and bonding the first substrate with the second substrate, wherein a top surface of the at least portion of the IMD layer is exposed through the patterned adhesive after bonding the first substrate with the second substrate.

Abstract: A method of manufacturing a semiconductor structure includes receiving a first substrate including an IMD layer disposed over the first substrate and a plurality of conductive bumps disposed in the IMD layer; receiving a second substrate; disposing a patterned adhesive over the first substrate, wherein at least a portion of the IMD layer is exposed through the patterned adhesive; and bonding the first substrate with the second substrate, wherein a top surface of the at least portion of the IMD layer is exposed through the patterned adhesive after bonding the first substrate with the second substrate.

Abstract: A method of manufacturing a semiconductor structure, including receiving a first substrate including a plurality of conductive bumps disposed over the first substrate; receiving a second substrate; disposing an adhesive over the first substrate; removing a portion of the adhesive to expose at least one of the plurality of conductive bumps; and bonding the first substrate with the second substrate.

Abstract: A method of fabricating a semiconductor structure includes: forming a conductive layer on a first insulating layer; etching a portion of the conductive layer to expose a portion of the first insulating layer; deforming a surface of the portion of the first insulating layer to form a rough surface of the first insulating layer; and removing a residue of the conductive layer on the rough surface of the first insulating layer.

Abstract: A method of manufacturing a semiconductor structure, including receiving a first substrate including a plurality of conductive bumps disposed over the first substrate; receiving a second substrate; disposing an adhesive over the first substrate; removing a portion of the adhesive to expose at least one of the plurality of conductive bumps; and bonding the first substrate with the second substrate.

Abstract: A method of manufacturing a semiconductor structure, comprising: receiving a first substrate including a first surface, a second surface opposite to the first surface and a plurality of conductive bumps disposed over the first surface; receiving a second substrate; disposing an adhesive over the first substrate or the second substrate; heating the adhesive in a first ambiance; bonding the first substrate with the second substrate by applying a force of less than about 10,000N upon the first substrate or the second substrate and heating the adhesive in a second ambiance; and thinning down a thickness of the first substrate from the second surface.

Abstract: A method of fabricating a semiconductor structure includes: forming a conductive layer on a first insulating layer; etching a portion of the conductive layer to expose a portion of the first insulating layer; deforming a surface of the portion of the first insulating layer to form a rough surface of the first insulating layer; and removing a residue of the conductive layer on the rough surface of the first insulating layer.

Abstract: A method of manufacturing a semiconductor structure, comprising: receiving a first substrate including a first surface, a second surface opposite to the first surface and a plurality of conductive bumps disposed over the first surface; receiving a second substrate; disposing an adhesive over the first substrate or the second substrate; heating the adhesive in a first ambiance; bonding the first substrate with the second substrate by applying a force of less than about 10,000N upon the first substrate or the second substrate and heating the adhesive in a second ambiance; and thinning down a thickness of the first substrate from the second surface.