Patents by Inventor Tsung-Min Hsieh
Tsung-Min Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8193596Abstract: A micro-electro-mechanical systems (MEMS) package includes a MEMS microphone device. The MEMS microphone device has a first substrate and at least a sensing element on the first substrate wherein a first chamber in the MEMS microphone device is connected to the sensing element. A second substrate is disposed over the MEMS microphone device to provide a second chamber in the second substrate over the sensing element opposite to the first chamber.Type: GrantFiled: September 3, 2008Date of Patent: June 5, 2012Assignee: Solid State System Co., Ltd.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh, Chih-Hsiang Lin
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Patent number: 8173471Abstract: A method for fabricating MEMS device includes providing a substrate having a first side and a second side. Then, a structural dielectric layer is formed over the substrate at the first side, wherein a structural conductive layer is embedded in the structural dielectric layer. A multi-stage patterning process is performed on the substrate from the second side, wherein a plurality of regions of the substrate with different levels is formed and a portion of the structural dielectric layer is exposed. An isotropic etching process is performed from the second side of the substrate or from the both side of the substrate to etch the structural dielectric layer, wherein a remaining portion of the structural dielectric layer comprises the structural conductive layer and a dielectric portion enclosed by the structural conductive layer.Type: GrantFiled: April 29, 2008Date of Patent: May 8, 2012Assignee: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee
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Publication number: 20120090398Abstract: A MEMS structure includes a substrate, a structural dielectric layer, and a diaphragm. A structural dielectric layer is disposed over the substrate. The diaphragm is held by the structural dielectric layer at a peripheral end. The diaphragm includes multiple trench/ridge rings at a peripheral region surrounding a central region of the diaphragm. A corrugated structure is located at the central region of the diaphragm, surrounded by the trench/indent rings.Type: ApplicationFiled: October 14, 2010Publication date: April 19, 2012Applicant: SOLID STATE SYSTEM CO., LTD.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh, Li-Chi Tsao, Jhyy-Cheng Liou
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Publication number: 20120065546Abstract: A measurement and estimation method for orthopedics diagnosis is disclosed, which includes providing a resonant frequency of a bone, providing a bone length of the bone, providing a correction parameter, and calculating a bone density according to the resonant frequency, the bone length, and the correction parameter.Type: ApplicationFiled: April 27, 2011Publication date: March 15, 2012Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Quanta Computer Inc.Inventors: Yu-Min WU, Chih-Hsiung Yu, Hsin-Hsueh Wu, Chien-Sheng Wang, Tsung-Min Hsieh, Shu-Wei Huang
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Patent number: 8093087Abstract: Method for fabricating MEMS device has a first surface and a second surface and having a MEMS region and an IC region. A MEMS structure is formed over the first surface. A structural dielectric layer is formed over the first surface. The structural dielectric layer has a dielectric member and the spaces surrounding the MEMS structure is filled with the dielectric member. The substrate is patterned by etching process from the second surface of the substrate to expose a portion of the dielectric member filled in the space surrounding the MEMS structure. A wettable thin layer is formed to cover an exposed portion of the substrate at the second surface. An etching process is performed on the dielectric member filled in the spaces surrounding the MEMS structure. The MEMS structure is exposed and released by the etching process. The etching process comprises an isotropic etching process with a wet etchant.Type: GrantFiled: August 15, 2011Date of Patent: January 10, 2012Assignee: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Jhyy-Cheng Liou
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Patent number: 8093119Abstract: A method for fabricating the MEMS device includes providing a substrate. Then, a structural dielectric layer is formed over the substrate at a first side, wherein a diaphragm is embedded in the structural dielectric layer. The substrate is patterned from a second side to form a cavity in corresponding to the diaphragm and a plurality of venting holes in the substrate. An isotropic etching process is performed from the first side and the second side of the substrate via vent holes to remove a dielectric portion of the structural dielectric layer for exposing a central portion of the diaphragm while an end portion is held by a residue portion of the structural dielectric layer.Type: GrantFiled: June 24, 2009Date of Patent: January 10, 2012Assignee: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee
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Patent number: 8094839Abstract: A microelectromechanical system (MEMS) device includes a diaphragm capacitor, connected between a capacitor biasing voltage source and a ground. A source follower circuit is coupled to the diaphragm capacitor. An amplifier is coupled to the source follower circuit to amplify the voltage signal as an output voltage signal. A programmable trimming circuit is implemented with the amplifier to trim a gain or implemented with the capacitor biasing voltage source to trim voltage applied on the diaphragm capacitor. Whereby, the output voltage signal has a target sensitivity.Type: GrantFiled: April 30, 2009Date of Patent: January 10, 2012Assignee: Solid State System Co., Ltd.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh, Shao-Yi Wu
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Publication number: 20110300659Abstract: Method for fabricating MEMS device has a first surface and a second surface and having a MEMS region and an IC region. A MEMS structure is formed over the first surface. A structural dielectric layer is formed over the first surface. The structural dielectric layer has a dielectric member and the spaces surrounding the MEMS structure is filled with the dielectric member. The substrate is patterned by etching process from the second surface of the substrate to expose a portion of the dielectric member filled in the space surrounding the MEMS structure. A wettable thin layer is formed to cover an exposed portion of the substrate at the second surface. An etching process is performed on the dielectric member filled in the spaces surrounding the MEMS structure. The MEMS structure is exposed and released by the etching process. The etching process comprises an isotropic etching process with a wet etchant.Type: ApplicationFiled: August 15, 2011Publication date: December 8, 2011Applicant: SOLID STATE SYSTEM CO., LTD.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Jhyy-Cheng Liou
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Patent number: 8043897Abstract: A method for forming a micro-electro-mechanical systems (MEMS) package includes following steps. A plurality of MEMS units are formed on a substrate, and each of the MEMS units includes at least a MEMS sensing element and a first chamber over the MEMS sensing element. The MEMS units include electric connection pads. A plurality of covering units are formed correspondingly over the MEMS units. Each of the covering units provides a second chamber over the MEMS sensing element opposite to the first chamber. The covering units are adhered to the MEMS units by an adhesive material. The MEMS units are diced into singulated units.Type: GrantFiled: March 21, 2011Date of Patent: October 25, 2011Assignee: Solid State System Co., Ltd.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh, Chih-Hsiang Lin
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Patent number: 8030112Abstract: A method for fabricating MEMS device includes: providing a single crystal substrate, having first surface and second surface and having a MEMS region and an IC region; forming SCS mass blocks on the first surface in the MEMS region; forming a structural dielectric layer over the first surface of the substrate, wherein a dielectric member of the structural dielectric layer is filled in spaces surrounding the SCS mass blocks in the MEMS region, the IC region has a circuit structure with an interconnection structure formed in the structural dielectric layer; patterning the single crystal substrate by an etching process on the second surface to expose a portion of the dielectric member filled in the spaces surrounding the SCS mass blocks; performing isotropic etching process at least on the dielectric portion filled in the spaces surrounding the SCS mass blocks. The SCS mass blocks are exposed to release a MEMS structure.Type: GrantFiled: January 22, 2010Date of Patent: October 4, 2011Assignee: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Jhyy-Cheng Liou
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Publication number: 20110183456Abstract: A method for fabricating MEMS device includes: providing a single crystal substrate, having first surface and second surface and having a MEMS region and an IC region; forming SCS mass blocks on the first surface in the MEMS region; forming a structural dielectric layer over the first surface of the substrate, wherein a dielectric member of the structural dielectric layer is filled in spaces surrounding the SCS mass blocks in the MEMS region, the IC region has a circuit structure with an interconnection structure formed in the structural dielectric layer; patterning the single crystal substrate by an etching process on the second surface to expose a portion of the dielectric member filled in the spaces surrounding the SCS mass blocks; performing isotropic etching process at least on the dielectric portion filled in the spaces surrounding the SCS mass blocks. The SCS mass blocks are exposed to release a MEMS structure.Type: ApplicationFiled: January 22, 2010Publication date: July 28, 2011Applicant: SOLID STATE SYSTEM CO., LTD.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Jhyy-Cheng Liou
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Publication number: 20110165717Abstract: A method for forming a micro-electro-mechanical systems (MEMS) package includes following steps. A plurality of MEMS units are formed on a substrate, and each of the MEMS units includes at least a MEMS sensing element and a first chamber over the MEMS sensing element. The MEMS units include electric connection pads. A plurality of covering units are formed correspondingly over the MEMS units. Each of the covering units provides a second chamber over the MEMS sensing element opposite to the first chamber. The covering units are adhered to the MEMS units by an adhesive material. The MEMS units are diced into singulated units.Type: ApplicationFiled: March 21, 2011Publication date: July 7, 2011Applicant: SOLID STATE SYSTEM CO., LTD.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh, Chih-Hsiang Lin
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Publication number: 20110158259Abstract: An apparatus and method for frequency division and filtering are provided. The apparatus includes a memory unit, an extrema calculation unit, and an envelope calculation unit. The memory unit is for storing sample data. The extrema calculation unit is for outputting and storing a number of maximum values and a number of minimum values to the memory unit according to the sample data. The envelope calculation unit is for calculating a mean envelope according to the maximum values and the minimum values, wherein within a duration when the envelope calculation unit respectively calculates an upper envelope and a lower envelope according to the maximum values and the minimum values, the envelope calculation unit outputs a value of the mean envelope to the memory unit according to a value of the upper envelope and a value of the lower envelope with respect to a corresponding identical address.Type: ApplicationFiled: August 25, 2010Publication date: June 30, 2011Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ting-Hsuan Chen, Gaung-Hui Gu, Ying-Chiang Hu, Tsung-Min Hsieh, Jun-Chao Zhao
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Publication number: 20110156106Abstract: A hermetic microelectromechanical system (MEMS) package includes a CMOS MEMS chip and a second substrate. The CMOS MEMS Chip has a first substrate, a structural dielectric layer, a CMOS circuit and a MEMS structure. The structural dielectric layer is disposed on a first side of the first structural substrate. The structural dielectric layer has an interconnect structure for electrical interconnection and also has a protection structure layer. The first structural substrate has at least a hole. The hole is under the protection structure layer to form at least a chamber. The chamber is exposed to the environment in the second side of the first structural substrate. The chamber also comprises a MEMS structure. The second substrate is adhered to a second side of the first substrate over the chamber to form a hermetic space and the MEMS structure is within the space.Type: ApplicationFiled: December 28, 2009Publication date: June 30, 2011Applicant: SOLID STATE SYSTEM CO., LTD.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh, Jhyy-Cheng Liou
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Patent number: 7951636Abstract: A micro-electro-mechanical system (MEMS) device includes a substrate, having a first side and second side, the second side has a cavity and a plurality of venting holes in the substrate at the second side with connection to the cavity. However, the cavity is included in option without absolute need. A structural dielectric layer has a dielectric structure and a conductive structure in the dielectric structure. The structural dielectric layer has a chamber in connection to the cavity by the venting holes. A suspension structure layer is formed above the chamber. An end portion is formed in the structural dielectric layer in fix position. A diaphragm has a first portion of the diaphragm fixed on the suspension structure layer while a second portion of the diaphragm is free without being fixed.Type: GrantFiled: September 22, 2008Date of Patent: May 31, 2011Assignee: Solid State System Co. Ltd.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh
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Publication number: 20110104844Abstract: A method for fabricating MEMS device includes providing a substrate having a first side and a second side. Then, a structural dielectric layer is formed over the substrate at the first side, wherein a structural conductive layer is embedded in the structural dielectric layer. A multi-stage patterning process is performed on the substrate from the second side, wherein a plurality of regions of the substrate with different levels is formed and a portion of the structural dielectric layer is exposed. An isotropic etching process is performed from the second side of the substrate or from the both side of the substrate to etch the structural dielectric layer, wherein a remaining portion of the structural dielectric layer comprises the structural conductive layer and a dielectric portion enclosed by the structural conductive layer.Type: ApplicationFiled: April 29, 2008Publication date: May 5, 2011Applicant: SOLID STATE SYSTEM CO., LTD.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee
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Publication number: 20100330722Abstract: A method for fabricating the MEMS device includes providing a substrate. Then, a structural dielectric layer is formed over the substrate at a first side, wherein a diaphragm is embedded in the structural dielectric layer. The substrate is patterned from a second side to form a cavity in corresponding to the diaphragm and a plurality of venting holes in the substrate. An isotropic etching process is performed from the first side and the second side of the substrate via vent holes to remove a dielectric portion of the structural dielectric layer for exposing a central portion of the diaphragm while an end portion is held by a residue portion of the structural dielectric layer.Type: ApplicationFiled: June 24, 2009Publication date: December 30, 2010Applicant: SOLID STATE SYSTEM CO., LTD.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee
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Publication number: 20100277229Abstract: A microelectromechanical system (MEMS) device includes a diaphragm capacitor, connected between a capacitor biasing voltage source and a ground. A source follower circuit is coupled to the diaphragm capacitor. An amplifier is coupled to the source follower circuit to amplify the voltage signal as an output voltage signal. A programmable trimming circuit is implemented with the amplifier to trim a gain or implemented with the capacitor biasing voltage source to trim voltage applied on the diaphragm capacitor. Whereby, the output voltage signal has a target sensitivity.Type: ApplicationFiled: April 30, 2009Publication date: November 4, 2010Applicant: Solid State System Co., Ltd.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh, Shao-Yi Wu
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Patent number: 7795063Abstract: A micro-electro-mechanical systems (MEMS) device includes a back-plate substrate, having an intended region formed with a plurality of perforating holes. A first structural dielectric layer, disposed on the back-plate substrate, wherein the dielectric layer having an opening above the intended region. An etching stop layer, disposed over the first structural dielectric layer. A second structural dielectric layer, formed over the back-plate substrate. The etching stop layer and the second structural dielectric layer form at least a part of a micro-machine diaphragm, and cover over the opening of the first structural dielectric layer to form a chamber between the micro-machine diaphragm and the back-plate substrate.Type: GrantFiled: December 31, 2007Date of Patent: September 14, 2010Assignee: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee
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Publication number: 20100072561Abstract: A micro-electro-mechanical system (MEMS) device includes a substrate, having a first side and second side, the second side has a cavity and a plurality of venting holes in the substrate at the second side with connection to the cavity. However, the cavity is included in option without absolute need. A structural dielectric layer has a dielectric structure and a conductive structure in the dielectric structure. The structural dielectric layer has a chamber in connection to the cavity by the venting holes. A suspension structure layer is formed above the chamber. An end portion is formed in the structural dielectric layer in fix position. A diaphragm has a first portion of the diaphragm fixed on the suspension structure layer while a second portion of the diaphragm is free without being fixed.Type: ApplicationFiled: September 22, 2008Publication date: March 25, 2010Applicant: SOLID STATE SYSTEM CO., LTD.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh