Patents by Inventor Tsung-Min Lin
Tsung-Min Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240192549Abstract: An intelligent window includes two substrates and a dimming layer. Each substrate is electrically connected to a voltage source. A switchable electric field is formed between the two substrates. The dimming layer is formed by filling a liquid crystal material between the two substrates. The liquid crystal material is formed by mixing a chiral molecule, a dichroic dye, and a salt ion in a nematic liquid crystal. A weight percentage concentration of the chiral molecule in the liquid crystal material is determined according to a limitation formula (I). C is the weight percentage concentration, n is a birefringence index of the liquid crystal material, p is a chiral force of the chiral molecule in micrometer?1, D is a thickness of the dimming layer in micrometer, m1 is a constant of multiaxial absorption condition in micrometer, and m2 is a constant of normally transparent condition.Type: ApplicationFiled: October 22, 2021Publication date: June 13, 2024Inventors: TSUNG-HSIEN LIN, CHENG-CHANG LI, HENG-YI TSENG, HUNG-CHANG JAU, LI-MIN CHANG, KUAN-WU LIN
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Publication number: 20240063045Abstract: A horizontally oriented calibration jig for a wafer gripper arm of an ion implanter is disclosed. The calibration jig is mounted within the process chamber of the ion implanter. The calibration jig includes a mounting plate that spans a diameter of the wafer gripper arm, a support stand passing through the mounting plate, and a calibration plate at a bottom end of the support stand. The perimeter of the calibration plate includes a plurality of notches. The calibration plate is rotated. If any finger of the wafer gripper arm falls into a notch, the rotating calibration plate stops. The finger is then adjusted until it does not fall into a notch.Type: ApplicationFiled: August 17, 2022Publication date: February 22, 2024Inventors: Lung-Yin Tang, Tsung-Min Lin, Hsin-Sheng Liang
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Publication number: 20230386778Abstract: The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.Type: ApplicationFiled: August 10, 2023Publication date: November 30, 2023Inventors: Ching-Heng YEN, Jen-Chung CHIU, Tai-Kun KAO, Lu-Hsun LIN, Tsung-Min LIN
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Patent number: 11830700Abstract: The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.Type: GrantFiled: March 11, 2022Date of Patent: November 28, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ching-Heng Yen, Jen-Chung Chiu, Tai-Kun Kao, Lu-Hsun Lin, Tsung-Min Lin
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Patent number: 11764042Abstract: A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw.Type: GrantFiled: March 22, 2022Date of Patent: September 19, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsung-Min Lin, Fang-Chi Chien, Cheng-Yi Huang, Chao-Po Lu
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Patent number: 11569062Abstract: An ion implantation system includes an ion implanter containing an ion source unit and a dopant source gas supply system. The system includes a dopant source gas storage tank inside a gas box container located remotely to the ion implanter and a dopant source gas supply pipe configured to supply a dopant source gas from the dopant source gas storage tank to the ion source unit. The dopant source gas supply pipe includes an inner pipe, an outer pipe enclosing the inner pipe, a first pipe adaptor coupled to first end of respective inner and outer pipes, and a second pipe adaptor coupled to seconds end of respective inner and outer pipes opposite the first end. The first pipe adaptor connects the inner pipe to the dopant source gas storage tank and the second pipe adaptor connects the inner pipe to the ion source unit.Type: GrantFiled: May 22, 2020Date of Patent: January 31, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hom-Chung Lin, Jih-Churng Twu, Yi-Ting Chang, Chao-Po Lu, Tsung-Min Lin
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Publication number: 20220216040Abstract: A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw.Type: ApplicationFiled: March 22, 2022Publication date: July 7, 2022Inventors: Tsung-Min LIN, Fang-Chi Chien, Cheng-Yi Huang, Chao-Po Lu
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Publication number: 20220199351Abstract: The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.Type: ApplicationFiled: March 11, 2022Publication date: June 23, 2022Inventors: Ching-Heng YEN, Jen-Chung CHIU, Tai-Kun KAO, Lu-Hsun LIN, Tsung-Min LIN
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Patent number: 11295926Abstract: The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.Type: GrantFiled: November 27, 2019Date of Patent: April 5, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ching-Heng Yen, Jen-Chung Chiu, Tai-Kun Kao, Lu-Hsun Lin, Tsung-Min Lin
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Patent number: 11289311Abstract: A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw.Type: GrantFiled: September 30, 2019Date of Patent: March 29, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsung-Min Lin, Fang-Chi Chien, Cheng-Yi Huang, Chao-Po Lu
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Publication number: 20220037115Abstract: An insulator for an ion implantation source may provide electrical insulation between high voltage components and relatively lower voltage components of the ion implantation source. To reduce the likelihood of and/or prevent a leakage path forming along the insulator, the insulator may include an internal cavity having a back and forth pattern. The back and forth pattern of the internal cavity increases the mean free path of gas molecules in the ion implantation source and increases the surface area of the insulator that is not directly or outwardly exposed to the gas molecules. This results in a continuous film or coating being more difficult and/or less likely to form along the insulator, which extends the working time of the ion implantation source.Type: ApplicationFiled: July 31, 2020Publication date: February 3, 2022Inventors: Tsung-Min LIN, Sheng-Chi LIN, Jui-Feng JAO, Fang-Chi CHIEN, Lung-Yin TANG
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Publication number: 20210366690Abstract: An ion implantation system includes an ion implanter containing an ion source unit and a dopant source gas supply system. The system includes a dopant source gas storage tank inside a gas box container located remotely to the ion implanter and a dopant source gas supply pipe configured to supply a dopant source gas from the dopant source gas storage tank to the ion source unit. The dopant source gas supply pipe includes an inner pipe, an outer pipe enclosing the inner pipe, a first pipe adaptor coupled to first end of respective inner and outer pipes, and a second pipe adaptor coupled to seconds end of respective inner and outer pipes opposite the first end. The first pipe adaptor connects the inner pipe to the dopant source gas storage tank and the second pipe adaptor connects the inner pipe to the ion source unit.Type: ApplicationFiled: May 22, 2020Publication date: November 25, 2021Inventors: Hom-Chung LIN, Jih-Churng TWU, Yi-Ting CHANG, Chao-Po LU, Tsung-Min Lin
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Publication number: 20200211809Abstract: The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.Type: ApplicationFiled: November 27, 2019Publication date: July 2, 2020Inventors: Ching-Heng YEN, Jen-Chung CHIU, Tai-Kun KAO, Lu-Hsun LIN, Tsung-Min LIN
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Publication number: 20200126774Abstract: A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw.Type: ApplicationFiled: September 30, 2019Publication date: April 23, 2020Inventors: Tsung-Min LIN, Fang-Chi Chien, Cheng-Yi Huang, Chao-Po Lu
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Patent number: 10319557Abstract: Ion generators for ion implanters are provided. The ion generator for an ion implanter includes an ion source arc chamber including an arc chamber housing and a thermal electron emitter coupled to the arc chamber housing. In addition, the thermal electron emitter includes a filament and a cathode, and the cathode has a solid top portion made of a work function modified conductive material including tungsten (W) and a work function modification metal.Type: GrantFiled: August 31, 2017Date of Patent: June 11, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tai-Kun Kao, Tsung-Min Lin, Jen-Chung Chiu, Ren-Dou Lee
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Publication number: 20190066967Abstract: Ion generators for ion implanters are provided. The ion generator for an ion implanter includes an ion source arc chamber including an arc chamber housing and a thermal electron emitter coupled to the arc chamber housing. In addition, the thermal electron emitter includes a filament and a cathode, and the cathode has a solid top portion made of a work function modified conductive material including tungsten (W) and a work function modification metal.Type: ApplicationFiled: August 31, 2017Publication date: February 28, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tai-Kun KAO, Tsung-Min LIN, Jen-Chung CHIU, Ren-Dou LEE
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Patent number: 10163609Abstract: An ion implanter comprises a dissociation chamber in the ion implanter. The dissociation chamber has an input port for receiving a gas and an output port for outputting ions. A vacuum chamber surrounds the dissociation chamber. A plurality of rods or plates of magnetic material are located adjacent to the dissociation chamber on at least two sides of the dissociation chamber. A magnet is magnetically coupled to the plurality of rods or plates of magnetic material. A microwave source is provided for supplying microwaves to the dissociation chamber, so as to cause electron cyclotron resonance in the dissociation chamber to ionize the gas.Type: GrantFiled: March 31, 2017Date of Patent: December 25, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsung-Min Lin, Ming-Hsing Li, Fang-Chi Chien, Chao-Li Shih, Hong-Hsing Chou
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Publication number: 20180174807Abstract: An ion implanter comprises a dissociation chamber in the ion implanter. The dissociation chamber has an input port for receiving a gas and an output port for outputting ions. A vacuum chamber surrounds the dissociation chamber. A plurality of rods or plates of magnetic material are located adjacent to the dissociation chamber on at least two sides of the dissociation chamber. A magnet is magnetically coupled to the plurality of rods or plates of magnetic material. A microwave source is provided for supplying microwaves to the dissociation chamber, so as to cause electron cyclotron resonance in the dissociation chamber to ionize the gas.Type: ApplicationFiled: March 31, 2017Publication date: June 21, 2018Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsung-Min LIN, Ming-Hsing LI, Fang-Chi CHIEN, Chao-Li SHIH, Hong-Hsing CHOU
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Publication number: 20170243719Abstract: A method for generating an ion beam in an ion implantation process is provided. The method includes supplying a working gas into a first portion of an arc chamber which is separated from a second portion of the arc chamber by an intermediate plate. The method further includes guiding the working gas into the second portion of the arc chamber via a plurality of gas outlets formed at two opposite edges of the intermediate plate. The method also includes generating an ion beam from the working gas in the second portion of the arc chamber.Type: ApplicationFiled: November 3, 2016Publication date: August 24, 2017Inventors: Tai-Kun KAO, Tsung-Min LIN, Jen-Chung CHIU
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Patent number: 9741537Abstract: A method for generating an ion beam in an ion implantation process is provided. The method includes supplying a working gas into a first portion of an arc chamber which is separated from a second portion of the arc chamber by an intermediate plate. The method further includes guiding the working gas into the second portion of the arc chamber via a plurality of gas outlets formed at two opposite edges of the intermediate plate. The method also includes generating an ion beam from the working gas in the second portion of the arc chamber.Type: GrantFiled: November 3, 2016Date of Patent: August 22, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tai-Kun Kao, Tsung-Min Lin, Jen-Chung Chiu