Patents by Inventor Tsung-Shang Wei

Tsung-Shang Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making semiconductor device package including conformal metal cap contacting each semiconductor die
    Patent number: 11488842
    Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor die and a second semiconductor die to a first substrate, forming a conductive layer over the first semiconductor die, the second semiconductor die, and the first substrate, applying an encapsulant over the conductive layer, and removing a portion of the encapsulant, wherein the removing the portion of the encapsulant exposes the conductive layer.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: November 1, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Yu Tsai, Tsung-Shang Wei, Yu-Sheng Lin, Wen-Chih Chiou, Shin-Puu Jeng
  • Semiconductor Device and Method
    Publication number: 20210090906
    Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor die and a second semiconductor die to a first substrate, forming a conductive layer over the first semiconductor die, the second semiconductor die, and the first substrate, applying an encapsulant over the conductive layer, and removing a portion of the encapsulant, wherein the removing the portion of the encapsulant exposes the conductive layer.
    Type: Application
    Filed: November 16, 2020
    Publication date: March 25, 2021
    Inventors: Chen-Yu Tsai, Tsung-Shang Wei, Yu-Sheng Lin, Wen-Chih Chiou, Shin-Puu Jeng
  • Semiconductor Device and Method
    Publication number: 20200111682
    Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor die and a second semiconductor die to a first substrate, forming a conductive layer over the first semiconductor die, the second semiconductor die, and the first substrate, applying an encapsulant over the conductive layer, and removing a portion of the encapsulant, wherein the removing the portion of the encapsulant exposes the conductive layer.
    Type: Application
    Filed: December 6, 2019
    Publication date: April 9, 2020
    Inventors: Chen-Yu Tsai, Tsung-Shang Wei, Yu-Sheng Lin, Wen-Chih Chiou, Shin-Puu Jeng
  • Semiconductor device package including conformal metal cap contacting each semiconductor die
    Patent number: 10510561
    Abstract: In accordance with an embodiment a method of manufacturing a semiconductor device includes bonding a first semiconductor die and a second semiconductor die to a first substrate, forming a conductive layer over the first semiconductor die, the second semiconductor die, and the first substrate, applying an encapsulant over the conductive layer, and removing a portion of the encapsulant, wherein the removing the portion of the encapsulant exposes the conductive layer.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: December 17, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chen-Yu Tsai, Tsung-Shang Wei, Yu-Sheng Lin, Wen-Chih Chiou, Shin-Puu Jeng
  • Semiconductor Device and Method
    Publication number: 20170140947
    Abstract: In accordance with an embodiment a method of manufacturing a semiconductor device includes bonding a first semiconductor die and a second semiconductor die to a first substrate, forming a conductive layer over the first semiconductor die, the second semiconductor die, and the first substrate, applying an encapsulant over the conductive layer, and removing a portion of the encapsulant, wherein the removing the portion of the encapsulant exposes the conductive layer.
    Type: Application
    Filed: January 27, 2017
    Publication date: May 18, 2017
    Inventors: Chen-Yu Tsai, Tsung-Shang Wei, Yu-Sheng Lin, Wen-Chih Chiou, Shin-Puu Jeng
  • Semiconductor Device and Method
    Publication number: 20150287697
    Abstract: In accordance with an embodiment a first semiconductor die and a second semiconductor die are bonded to a first substrate. A protective cap is formed over and between the first semiconductor die and the second semiconductor die. An encapsulant is placed over the protective layer and portions of the encapsulant are removed in order to expose the protective cap or, alternatively, to expose the first semiconductor device and the second semiconductor device. The first substrate may then be bonded to a second substrate.
    Type: Application
    Filed: April 2, 2014
    Publication date: October 8, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Yu Tsai, Tsung-Shang Wei, Yu-Sheng Lin, Wen-Chih Chiou, Shin-Puu Jeng