Patents by Inventor Tsung-Shin Chen

Tsung-Shin Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5506737
    Abstract: A VLSI-compatible process for the manufacturing of a monolithic high-density electronic head in the form of a single composite IC chip for reading and/or writing multiple tracks of magnetically recordable information. The VLSI-compatible process comprises the steps of fabricating a digital signal process circuit as well as other desired circuit components on a substrate, then fabricating a plurality of read and/or write elements on the same substrate using a thin film technique. Because the silicon-based materials, which are used to replace the conventional magneto-resistant elements, show very little magneto-resistance effect at room temperature, a magnetically sensitive layer is provided which comprises a double-drain polycrystalline thin-films transistor (DTFT) to provide the required sensitivity.
    Type: Grant
    Filed: July 5, 1994
    Date of Patent: April 9, 1996
    Assignee: Industrial Technology Research Institute
    Inventors: Hsiao-Yi Lin, Tan F. Lei, Tsung-Shin Chen