Patents by Inventor Tsung-Ting Wu
Tsung-Ting Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11990351Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, an encapsulant, a protection layer and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The encapsulant is disposed over the interposer and laterally encapsulating the at least one semiconductor die. The connectors are disposed on the second surface of the interposer and electrically connected with the at least one semiconductor die through the interposer. The protection layer is disposed on the second surface of the interposer and surrounding the connectors. The sidewalls of the interposer include slanted sidewalls connected to the second surface, and the protection layer is in contact with the slant sidewalls of the interposer.Type: GrantFiled: March 26, 2021Date of Patent: May 21, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jiun-Ting Chen, Chih-Wei Wu, Szu-Wei Lu, Tsung-Fu Tsai, Ying-Ching Shih, Ting-Yu Yeh, Chen-Hsuan Tsai
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Publication number: 20240157469Abstract: The present application provides a method for determining a stability of a welding equipment. The method includes acquiring initial welding images of the welding equipment; obtaining at least one welding spot position of each of at least one welded workpiece in each initial welding image by processing the initial welding images; determining a welding center position of each welded workpiece based on the at least one welding spot position of each welded workpiece, and obtaining welding center positions of all welded workpieces comprised in the initial welding images; and determining a stability of welding equipment based on the welding center positions of all welded workpieces. The method determines whether the welding equipment is stable by analyzing the welding images, thereby improving an accuracy of a detection of a stability of the welding equipment.Type: ApplicationFiled: November 13, 2023Publication date: May 16, 2024Inventors: YEN TSAN, TSUNG-JU LIN, CHEN-TING WU, MING-TAO LUO, JUN-MING HUANG, TAI-YU CHOU, QUAN-XI CHEN
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Publication number: 20230369518Abstract: An optical sensing apparatus including: a substrate including a first material; an absorption region including a second material different from the first material; an amplification region formed in the substrate and configured to collect at least a portion of the photo-carriers from the absorption region and to amplify the portion of the photo-carriers; an interface-dopant region formed in the substrate between the absorption region and the amplification region; a buffer layer formed between the absorption region and the interface-dopant region; one or more field-control regions formed between the absorption region and the interface-dopant region and at least partially surrounding the buffer layer; and a buried-dopant region formed in the substrate and separated from the absorption region, where the buried-dopant region is configured to collect at least a portion of the amplified portion of the photo-carriers from the amplification region.Type: ApplicationFiled: July 14, 2023Publication date: November 16, 2023Inventors: Yen-Cheng Lu, Yu-Hsuan Liu, Jung-Chin Chiang, Yun-Chung Na, Tsung-Ting Wu, Zheng-Shun Liu, Chou-Yun Hsu
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Publication number: 20230204423Abstract: Systems, apparatuses, and methods for multi-application optical sensing are provided. For example, an optical sensing apparatus can include a photodetector array, a first circuitry, and a second circuitry. The photodetector array includes a plurality of photodetectors, wherein a first subset of the plurality of photodetectors are configured as a first region for detecting a first optical signal, and a second subset of the plurality of photodetectors are configured as a second region for detecting a second optical signal. The first circuitry, coupled to the first region, is configured to perform a first function based on the first optical signal to output a first output result. The second circuitry, coupled to the second region, is configured to perform a second function based on the second optical signal to output a second output result.Type: ApplicationFiled: March 6, 2023Publication date: June 29, 2023Inventors: Chih-Wei Yeh, Hung-Chih Chang, Yun-Chung Na, Tsung-Ting Wu, Shu-Lu Chen
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Patent number: 11624653Abstract: Systems, apparatuses, and methods for multi-application optical sensing are provided. For example, an optical sensing apparatus can include a photodetector array, a first circuitry, and a second circuitry. The photodetector array includes a plurality of photodetectors, wherein a first subset of the plurality of photodetectors are configured as a first region for detecting a first optical signal, and a second subset of the plurality of photodetectors are configured as a second region for detecting a second optical signal. The first circuitry, coupled to the first region, is configured to perform a first function based on the first optical signal to output a first output result. The second circuitry, coupled to the second region, is configured to perform a second function based on the second optical signal to output a second output result.Type: GrantFiled: September 9, 2021Date of Patent: April 11, 2023Assignee: ARTILUX, INC.Inventors: Chih-Wei Yeh, Hung-Chih Chang, Yun-Chung Na, Tsung-Ting Wu, Shu-Lu Chen
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Publication number: 20220178753Abstract: Systems, apparatuses, and methods for multi-application optical sensing are provided. For example, an optical sensing apparatus can include a photodetector array, a first circuitry, and a second circuitry. The photodetector array includes a plurality of photodetectors, wherein a first subset of the plurality of photodetectors are configured as a first region for detecting a first optical signal, and a second subset of the plurality of photodetectors are configured as a second region for detecting a second optical signal. The first circuitry, coupled to the first region, is configured to perform a first function based on the first optical signal to output a first output result. The second circuitry, coupled to the second region, is configured to perform a second function based on the second optical signal to output a second output result.Type: ApplicationFiled: September 9, 2021Publication date: June 9, 2022Inventors: Chih-Wei Yeh, Hung-Chih Chang, Yun-Chung Na, Tsung-Ting Wu, Shu-Lu Chen
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Patent number: 11340398Abstract: A waveguide structure includes a first surface having a first width, a second surface having a second width, the second surface being opposite to the first surface, and a sidewall surface connecting the first surface and the second surface. The first width is greater than the second width.Type: GrantFiled: October 24, 2019Date of Patent: May 24, 2022Assignee: ARTILUX, INC.Inventors: Szu-Lin Cheng, Chien-Yu Chen, Han-Din Liu, Chia-Peng Lin, Chung-Chih Lin, Yun-Chung Na, Pin-Tso Lin, Tsung-Ting Wu, Yu-Hsuan Liu, Kuan-Chen Chu
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Publication number: 20220136817Abstract: Systems, apparatuses, and methods for improved reconfigurable optical sensing are provided. For instance, an example optical sensing apparatus can include a photodetector array including a plurality of photodetectors. The optical sensing apparatus can include circuitry or one or more processing devices configured to receive one or more electrical signals representing an optical signal received by a first subset of the plurality of photodetectors; determine, based on the one or more electrical signals, a region of interest in the photodetector array for optical measurements; and deactivate, based on the region of interest, a second subset of the plurality of photodetectors of the photodetector array.Type: ApplicationFiled: September 9, 2021Publication date: May 5, 2022Inventors: Chih-Wei Yeh, Yun-Chung Na, Tsung-Ting Wu, Shu-Lu Chen
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Patent number: 11271132Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.Type: GrantFiled: April 14, 2020Date of Patent: March 8, 2022Assignee: Artilux, Inc.Inventors: Chien-Yu Chen, Szu-Lin Cheng, Chieh-Ting Lin, Yu-Hsuan Liu, Ming-Jay Yang, Shu-Lu Chen, Tsung-Ting Wu, Chia-Peng Lin, Yun-Chung Na, Hui-Wen Chen, Han-Din Liu
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Publication number: 20210391370Abstract: A photo-detecting apparatus is provided. The photo-detecting apparatus includes a carrier conducting layer having a first surface; an absorption region is doped with a first dopant having a first conductivity type and a first peak doping concentration, wherein the carrier conducting layer is doped with a second dopant having a second conductivity type and a second peak doping concentration, wherein the carrier conducting layer comprises a material different from a material of the absorption region, wherein the carrier conducting layer is in contact with the absorption region to form at least one heterointerface, wherein a ratio between the first peak doping concentration of the absorption region and the second peak doping concentration of the carrier conducting layer is equal to or greater than 10; and a first electrode and a second electrode both formed over the first surface of the carrier conducting layer.Type: ApplicationFiled: August 27, 2021Publication date: December 16, 2021Inventors: Yen-Cheng Lu, Yun-Chung Na, Tsung-Ting Wu, Shu-Lu Chen, Chih-Wei Yeh
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Publication number: 20200313029Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.Type: ApplicationFiled: April 14, 2020Publication date: October 1, 2020Inventors: Chien-Yu Chen, Szu-Lin Cheng, Chieh-Ting Lin, Yu-Hsuan Liu, Ming-Jay Yang, Shu-Lu Chen, Tsung-Ting Wu, Chia-Peng Lin, Yun-Chung Na, Hui-Wen Chen, Han-Din Liu
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Publication number: 20200274017Abstract: An optoelectronic device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type different from the first conductivity type, and a photoelectric conversion region between the first semiconductor region and the second semiconductor region. The photoelectric conversion region is of a third conductivity type the same as the first conductivity type.Type: ApplicationFiled: February 21, 2020Publication date: August 27, 2020Inventors: Yun-Chung Na, Yen-Cheng Lu, Yu-Hsuan Liu, Chung-Chih Lin, Tsung-Ting Wu, Szu-Lin Cheng
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Patent number: 10747361Abstract: The control device includes a touch sensor circuit, a control circuit, a driving circuit and a switching circuit. The touch sensor circuit is configured to generate a touch signal and a function signal in response to a touch state of a touch component. The control circuit is activated by a first voltage. The control circuit selectivity generates a self-holding signal according to the function signal when it is activated. The driving circuit is configured to generate a drive signal according to the touch signal or the self-holding signal. The switch circuit is turned on by the drive signal so as to provide the first voltage to the control circuit by the turned-on switching circuit. When the control circuit generated the self-holding signal, the control circuit is configured to continuously transmit the self-holding signal to the driving circuit according to the function signal during a first enabling period.Type: GrantFiled: July 1, 2019Date of Patent: August 18, 2020Assignee: DELTA ELECTRONICS INC.Inventors: Tsung-Ting Wu, Si-Wei Chen
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Publication number: 20200142527Abstract: The control device includes a touch sensor circuit, a control circuit, a driving circuit and a switching circuit. The touch sensor circuit is configured to generate a touch signal and a function signal in response to a touch state of a touch component. The control circuit is activated by a first voltage. The control circuit selectivity generates a self-holding signal according to the function signal when it is activated. The driving circuit is configured to generate a drive signal according to the touch signal or the self-holding signal. The switch circuit is turned on by the drive signal so as to provide the first voltage to the control circuit by the turned-on switching circuit. When the control circuit generated the self-holding signal, the control circuit is configured to continuously transmit the self-holding signal to the driving circuit according to the function signal during a first enabling period.Type: ApplicationFiled: July 1, 2019Publication date: May 7, 2020Inventors: Tsung-Ting Wu, Si-Wei Chen
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Patent number: 10644187Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.Type: GrantFiled: December 13, 2018Date of Patent: May 5, 2020Assignee: Artilux, Inc.Inventors: Chien-Yu Chen, Szu-Lin Cheng, Chieh-Ting Lin, Yu-Hsuan Liu, Ming-Jay Yang, Shu-Lu Chen, Tsung-Ting Wu, Chia-Peng Lin
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Publication number: 20200132927Abstract: A waveguide structure includes a first surface having a first width, a second surface having a second width, the second surface being opposite to the first surface, and a sidewall surface connecting the first surface and the second surface. The first width is greater than the second width.Type: ApplicationFiled: October 24, 2019Publication date: April 30, 2020Inventors: SZU-LIN CHENG, CHIEN-YU CHEN, HAN-DIN LIU, CHIA-PENG LIN, CHUNG-CHIH LIN, YUN-CHUNG NA, PIN-TSO LIN, TSUNG-TING WU, YU-HSUAN LIU, KUAN-CHEN CHU
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Publication number: 20190140133Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.Type: ApplicationFiled: December 13, 2018Publication date: May 9, 2019Inventors: Chien-Yu Chen, Szu-Lin Cheng, Chieh-Ting Lin, Yu-Hsuan Liu, Ming-Jay Yang, Shu-Lu Chen, Tsung-Ting Wu, Chia-Peng Lin
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Publication number: 20090289801Abstract: An intelligent power supply apparatus includes a power converting circuit, one or more sensors, an audio processor, an operating status processor, a storage unit and a loudspeaker. The power converting circuit is used for converting an input voltage into a regulated DC output voltage. The sensors detect operating statuses of the intelligent power supply apparatus, thereby generating corresponding sensing signals. The audio data are processed by the audio processor. The operating status processor is electrically connected to the sensors and the audio processor for controlling the audio processor to generate corresponding output audio signals in response to the sensing signals. The storage unit is electrically connected to the audio processor and/or the operating status processor for storing therein audio data. The loudspeaker is electrically connected to the audio processor for generating audio prompts corresponding to the output audio signals.Type: ApplicationFiled: July 28, 2008Publication date: November 26, 2009Applicant: DELTA ELECTRONICS, INC.Inventors: Cheng-Yi Lo, So-Huang Hsieh, Tsung-Ting Wu