Patents by Inventor Tsung-Yuan Chiang

Tsung-Yuan Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240178102
    Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.
    Type: Application
    Filed: April 21, 2023
    Publication date: May 30, 2024
    Inventors: Chun-Ti LU, Hao-Yi TSAI, Chiahung LIU, Ken-Yu CHANG, Tzuan-Horng LIU, Chih-Hao CHANG, Bo-Jiun LIN, Shih-Wei CHEN, Pei-Rong NI, Hsin-Wei HUANG, Zheng GangTsai, Tai-You LIU, Steve SHIH, Yu-Ting HUANG, Steven SONG, Yu-Ching WANG, Tsung-Yuan YU, Hung-Yi KUO, CHung-Shi LIU, Tsung-Hsien CHIANG, Ming Hung TSENG, Yen-Liang LIN, Tzu-Sung HUANG, Chun-Chih CHUANG
  • Patent number: 11935871
    Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hao-Yi Tsai, Cheng-Chieh Hsieh, Tsung-Hsien Chiang, Hui-Chun Chiang, Tzu-Sung Huang, Ming-Hung Tseng, Kris Lipu Chuang, Chung-Ming Weng, Tsung-Yuan Yu, Tzuan-Horng Liu
  • Publication number: 20140050287
    Abstract: A receiver for reducing a system start-up time includes an antenna, an RF (Radio Frequency) circuit, a demodulation circuit, and a data slicer. The data slicer includes a filter, a comparator, a switch, and a delay generator. The filter filters a demodulated signal so as to generate a threshold level. The comparator has a positive input terminal for receiving the demodulated signal and a negative input terminal for receiving the threshold level. The comparator compares the demodulated signal with the threshold level so as to generate a digital signal. The switch is coupled between the positive input terminal and the negative input terminal. The delay generator determines whether or not to close the switch during a delay time according to an enable signal.
    Type: Application
    Filed: March 7, 2013
    Publication date: February 20, 2014
    Applicant: PRINCETON TECHNOLOGY CORPORATION
    Inventors: Tsung-Yuan CHIANG, Nien-An KAO
  • Patent number: 8222880
    Abstract: A DC-DC conversion device is provided. The DC-DC conversion device includes a control signal generator, a conversion module and a comparison module. The control signal generator generates a control signal according to a delay signal. The conversion module is coupled to the control signal generator to convert an input voltage to an output voltage according to the control signal. The comparison module is coupled to the control signal generator and conversion module to compare the output voltage with a reference voltage and output the delay signal according to the comparison result, an enable signal and a clock signal.
    Type: Grant
    Filed: March 17, 2009
    Date of Patent: July 17, 2012
    Assignee: Princeton Technology Corporation
    Inventors: Nien-An Kao, Tsung-Yuan Chiang
  • Publication number: 20110070859
    Abstract: The invention provides a low noise amplifier. The low noise amplifier includes a first transistor, a second transistor, and a first resistor. The first transistor has a gate to receiving a radio frequency input signal, wherein the source of the first transistor is coupled to a ground voltage. The second transistor has a drain to output a radio frequency output signal, wherein the gate of the second transistor is coupled to a first reference voltage. The first resistor is coupled between the drain of the first transistor and the source of the second transistor.
    Type: Application
    Filed: August 20, 2010
    Publication date: March 24, 2011
    Inventors: Tsung-Yuan CHIANG, Nien-An Kao
  • Publication number: 20090237061
    Abstract: A DC-DC conversion device is provided. The DC-DC conversion device includes a control signal generator, a conversion module and a comparison module. The control signal generator generates a control signal according to a delay signal. The conversion module is coupled to the control signal generator to convert an input voltage to an output voltage according to the control signal. The comparison module is coupled to the control signal generator and conversion module to compare the output voltage with a reference voltage and output the delay signal according to the comparison result, an enable signal and a clock signal.
    Type: Application
    Filed: March 17, 2009
    Publication date: September 24, 2009
    Applicant: PRINCETON TECHNOLOGY CORPORATION
    Inventors: Nien-An KAO, Tsung-Yuan CHIANG
  • Patent number: 7115513
    Abstract: A method for forming uniform, sharply defined periodic regions of reversed polarization within a unidirectionally polarized ferroelectric material proceeds as a two-step process. First, alignment keys are formed on upper and lower planar surfaces of a unidirectionally polarized ferroelectric material by producing a spaced pair of alignment key shaped domain reversed regions and etching alignment key shaped notches in the upper and lower surfaces where the domain reversed regions intersect the surface planes. These notches, being vertically aligned between the upper and lower surfaces, are then used to align photomasks over a surface coating of photoresist formed directly on the material surface or on SiO2 layers coating the material surface.
    Type: Grant
    Filed: September 3, 2004
    Date of Patent: October 3, 2006
    Assignee: HC Photonics Corporation
    Inventors: Tsung Yuan Chiang, Tze-Chia Lin, Benny Sher, Ming-Hsien Chou
  • Patent number: 6900928
    Abstract: A method of patterning and fabricating poled dielectric microstructures in dielectric materials comprising the following steps. A poled dielectric microstructure within a dielectric material is provided. The poled dielectric microstructure is then segmented into a plurality of independent sub-structures. The poled dielectric microstructures are then fabricated within each of the plurality of independent sub-structures. Additional processes and a novel poling setup for improving and implementing this patterning and fabrication method are also disclosed.
    Type: Grant
    Filed: March 19, 2002
    Date of Patent: May 31, 2005
    Assignee: HC Photonics Corporation
    Inventors: Tze-Chia Lin, Tsung-Yuan Chiang, Pin-Hao Sher, Yen-Hung Chen, Ming-Hsien Chou
  • Publication number: 20030179439
    Abstract: A method of patterning and fabricating poled dielectric microstructures in dielectric materials comprising the following steps. A poled dielectric microstructure within a dielectric material is provided. The poled dielectric microstructure is then segmented into a plurality of independent sub-structures. The poled dielectric microstructures are then fabricated within each of the plurality of independent sub-structures. Additional processes and a novel poling setup for improving and implementing this patterning and fabrication method are also disclosed.
    Type: Application
    Filed: March 19, 2002
    Publication date: September 25, 2003
    Applicant: HC Photonics Corporation.
    Inventors: Tze-Chia Lin, Tsung-Yuan Chiang, Pin-Hao Sher, Yen-Hung Chen, Ming-Hsien Chou