Patents by Inventor Tsurugi Sudo
Tsurugi Sudo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240106202Abstract: In one example, an optoelectronic assembly may include a laser array, an amplifier array, and a multimode interference coupler optically coupling the laser array and the amplifier array. The laser array may include at least one primary laser and at least one spare laser configured to be activated if the primary laser fails. The amplifier array may include at least two amplifiers configured to amplify optical signals received from the laser array.Type: ApplicationFiled: September 29, 2023Publication date: March 28, 2024Inventors: Shiyun LIN, Tsurugi SUDO
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Patent number: 11811198Abstract: In one example, an optoelectronic assembly may include a laser array, an amplifier array, and a multimode interference coupler optically coupling the laser array and the amplifier array. The laser array may include at least one primary laser and at least one spare laser configured to be activated if the primary laser fails. The amplifier array may include at least two amplifiers configured to amplify optical signals received from the laser array.Type: GrantFiled: June 19, 2020Date of Patent: November 7, 2023Assignee: II-VI DELAWARE, INC.Inventors: Shiyun Lin, Tsurugi Sudo
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Publication number: 20230130007Abstract: A system is proposed for continuously monitoring the integrity of a transmission fiber coupled to a laser source and immediately shutting down the laser source upon recognition of any type of cut, break or disconnect along the transmission fiber. A pair of monitoring photodiodes is included with the laser source and used to look at the ratio of reflected light to transmitted light, shutting down the laser if the ratio exceeds a given threshold. If a break is present, the power of the reflected light will be higher than normal, where a defined threshold is used to determine of the calculated intensity is indicative of a break. By using measurements performed in terms of decibels, the monitoring system needs only to take the difference in intensities to generate the reflection/transmission ratio output.Type: ApplicationFiled: October 27, 2021Publication date: April 27, 2023Applicant: II-VI Delaware, Inc.Inventors: Tengda Du, Xiaojie Xu, Tsurugi Sudo, Martin Kwakernaak
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Patent number: 11086088Abstract: An optoelectronic assembly may include a photonic integrated circuit (PIC) with a top surface and a laser with a top surface and a bottom surface. The optoelectronic assembly may also include a housing configured to cooperate with the PIC to one or both of house and support one or more components. The housing may include a PIC mount including a first surface to interface with the top surface of the PIC, and a laser mount including a second surface to interface with the top or bottom surface of the laser. The first surface and the second surface may be parallel to each other.Type: GrantFiled: August 29, 2019Date of Patent: August 10, 2021Assignee: II-VI DELAWARE, INC.Inventors: Bernd Huebner, Tsurugi Sudo, Shiyun Lin
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Publication number: 20210028593Abstract: In one example, an optoelectronic assembly may include a laser array, an amplifier array, and a multimode interference coupler optically coupling the laser array and the amplifier array. The laser array may include at least one primary laser and at least one spare laser configured to be activated if the primary laser fails. The amplifier array may include at least two amplifiers configured to amplify optical signals received from the laser array.Type: ApplicationFiled: June 19, 2020Publication date: January 28, 2021Inventors: Shiyun Lin, Tsurugi Sudo
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Publication number: 20200073065Abstract: An optoelectronic assembly may include a photonic integrated circuit (PIC) with a top surface and a laser with a top surface and a bottom surface. The optoelectronic assembly may also include a housing configured to cooperate with the PIC to one or both of house and support one or more components. The housing may include a PIC mount including a first surface to interface with the top surface of the PIC, and a laser mount including a second surface to interface with the top or bottom surface of the laser. The first surface and the second surface may be parallel to each other.Type: ApplicationFiled: August 29, 2019Publication date: March 5, 2020Inventors: Bernd Huebner, Tsurugi Sudo, Shiyun Lin
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Patent number: 8705582Abstract: In one example embodiment, a DFB laser includes a substrate; an active region positioned above the substrate; a grating layer positioned above the active region, the grating layer including a portion that serves as a primary etch stop layer; a secondary etch stop layer positioned above the grating layer; and a spacer layer interposed between the grating layer and the secondary etch stop layer.Type: GrantFiled: July 1, 2013Date of Patent: April 22, 2014Assignee: Finisar CorporationInventors: Ashish K. Verma, Tsurugi Sudo, Sumesh Mani K. Thiyagarajan, David Bruce Young
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Publication number: 20130287405Abstract: In one example embodiment, a DFB laser includes a substrate; an active region positioned above the substrate; a grating layer positioned above the active region, the grating layer including a portion that serves as a primary etch stop layer; a secondary etch stop layer positioned above the grating layer; and a spacer layer interposed between the grating layer and the secondary etch stop layer.Type: ApplicationFiled: July 1, 2013Publication date: October 31, 2013Inventors: Ashish K. Verma, Tsurugi Sudo, Sumesh Mani K. Thiyagarajan, David Bruce Young
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Patent number: 8477817Abstract: In one example embodiment, a DFB laser includes a substrate, an active region positioned above the substrate, and a grating layer positioned above the active region. The grating layer includes a portion that serves as a primary etch stop layer. The DFB laser also includes a secondary etch stop layer located either above or below the grating layer, and a spacer layer interposed between the grating layer and the active region.Type: GrantFiled: October 11, 2010Date of Patent: July 2, 2013Assignee: Finisar CorporationInventors: Ashish K. Verma, Tsurugi Sudo, Sumesh Mani K. Thiyagarajan, David Bruce Young
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Patent number: 8277877Abstract: A method for depositing protective coatings on front and rear facets of an optical device, such as a laser die, is disclosed. The protective coatings help prevent laser facet damage common to laser dies manufactured using known processes. In one embodiment, the method for coating the laser die includes placing the laser in an evacuated coating chamber before applying a first coating portion to a first facet of the laser. The first coating portion is applied to the first facet so as to form a protective covering thereon, but is applied at a coating energy that minimizes damage to the as-yet uncoated second facet. The laser is then rotated within the coating chamber, and a full coating is applied to a second facet of the laser. The laser is again rotated, and a full coating is applied atop the first coating portion to the first facet of the laser.Type: GrantFiled: May 15, 2007Date of Patent: October 2, 2012Assignee: Finisar CorporationInventors: Roman Dimitrov, Ashish Verma, Tsurugi Sudo, Scott Lehmann
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Patent number: 8067949Abstract: Semiconductor lasers are aged to identify weak or flawed devices, resulting in improved reliability of the remaining devices. The lasers can be aged using a high-power optical burn-in that includes providing a high drive current to the lasers for a period of time, and maintaining the ambient temperature of the lasers at a low temperature. After the high-power optical burn-in, the output of the lasers can be measured to determine if the lasers are operating within specifications. Those that are not can be discarded, while those that are can be further aged using a high-temperature thermal burn-in that includes providing a drive current to the lasers while maintaining the ambient temperature of the lasers at a high-temperature.Type: GrantFiled: September 13, 2010Date of Patent: November 29, 2011Assignee: Finisar CorporationInventors: Robert W. Herrick, Charles B. Roxlo, T. H. Ola Sjolund, Tsurugi Sudo
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Publication number: 20110076032Abstract: In one example, a DFB laser includes a substrate, an active region, and a grating. The active region is formed above the substrate and is designed to emit light having a gain peak wavelength. The grating is formed above the active region and is designed to provide optical feedback for light having a lasing peak wavelength. The gain peak wavelength is longer than the lasing peak wavelength and a difference between the gain peak wavelength and the lasing peak wavelength at room temperature is between 10 nm and 50 nm.Type: ApplicationFiled: September 29, 2009Publication date: March 31, 2011Applicant: FINISAR CORPORATIONInventors: Ashish K. Verma, Tsurugi Sudo
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Publication number: 20110008917Abstract: Semiconductor lasers are aged to identify weak or flawed devices, resulting in improved reliability of the remaining devices. The lasers can be aged using a high-power optical burn-in that includes providing a high drive current to the lasers for a period of time, and maintaining the ambient temperature of the lasers at a low temperature. After the high-power optical burn-in, the output of the lasers can be measured to determine if the lasers are operating within specifications. Those that are not can be discarded, while those that are can be further aged using a high-temperature thermal burn-in that includes providing a drive current to the lasers while maintaining the ambient temperature of the lasers at a high-temperature.Type: ApplicationFiled: September 13, 2010Publication date: January 13, 2011Applicant: Finisar CorporationInventors: Robert W. Herrick, Charles B. Roxlo, T.H. Ola Sjolund, Tsurugi Sudo
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Patent number: 7858493Abstract: In one example embodiment, a process for cleaving a wafer cell includes several acts. First a wafer cell is affixed to an adhesive film. Next, the adhesive film is stretched substantially uniformly. Then, the adhesive film is further stretched in a direction that is substantially orthogonal to a predetermined reference direction. Next, the wafer cell is scribed to form a notch that is oriented substantially parallel to the predetermined reference direction. Finally, the wafer cell is cleaved at a location substantially along the notch.Type: GrantFiled: February 22, 2008Date of Patent: December 28, 2010Assignee: Finisar CorporationInventors: Weizhong Sun, Tsurugi Sudo, Jing Chai
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Patent number: 7813395Abstract: In one example embodiment, a DFB laser includes a substrate, an active region positioned above the substrate, and a grating layer positioned above the active region. The grating layer includes a portion that serves as a primary etch stop layer. The DFB laser also includes a secondary etch stop layer located either above or below the grating layer, and a spacer layer interposed between the grating layer and the active region.Type: GrantFiled: June 12, 2008Date of Patent: October 12, 2010Assignee: Finisar CorporationInventors: Ashish K. Verma, Tsurugi Sudo, Sumesh Mani K. Thiyagarajan, David Bruce Young
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Patent number: 7795896Abstract: Semiconductor lasers are aged to identify weak or flawed devices, resulting in improved reliability of the remaining devices. The lasers can be aged using a high-power optical burn-in that includes providing a high drive current to the lasers for a period of time, and maintaining the ambient temperature of the lasers at a low temperature. After the high-power optical burn-in, the output of the lasers can be measured to determine if the lasers are operating within specifications. Those that are not can be discarded, while those that are can be further aged using a high-temperature thermal burn-in that includes providing a drive current to the lasers while maintaining the ambient temperature of the lasers at a high-temperature.Type: GrantFiled: August 13, 2008Date of Patent: September 14, 2010Assignee: Finisar CorporationInventors: Robert W. Herrick, Charles B. Roxlo, T. H. Ola Sjolund, Tsurugi Sudo
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Patent number: 7763485Abstract: A method for etching facets of a laser die prior to coating in such a way as to control the formation of oxides and metallic films on the facet is disclosed. In one embodiment, the method includes placing a wafer on which the laser is included in the interior volume of an etching chamber. Nitrogen is introduced into the interior volume to define a nitrogen-rich environment. The laser facet is then etched in the nitrogen-rich environment with argon delivered from an ion gun. In another embodiment, the method includes placing the laser in an ion beam etching chamber, then physically etching the facet of the laser with an ion beam that includes an argon/nitrogen mixture. The laser facet(s) can then be coated as desired. The etching method reduces the incidence of leakage current during operation of the laser die caused by metallic film formation on the facet before coating.Type: GrantFiled: May 15, 2007Date of Patent: July 27, 2010Assignee: Finisar CorporationInventors: Roman Dimitrov, Ashish Verma, Tsurugi Sudo, Scott Lehmann
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Publication number: 20100039134Abstract: Semiconductor lasers are aged to identify weak or flawed devices, resulting in improved reliability of the remaining devices. The lasers can be aged using a high-power optical burn-in that includes providing a high drive current to the lasers for a period of time, and maintaining the ambient temperature of the lasers at a low temperature. After the high-power optical burn-in, the output of the lasers can be measured to determine if the lasers are operating within specifications. Those that are not can be discarded, while those that are can be further aged using a high-temperature thermal burn-in that includes providing a drive current to the lasers while maintaining the ambient temperature of the lasers at a high-temperature.Type: ApplicationFiled: August 13, 2008Publication date: February 18, 2010Applicant: FINISAR CORPORATIONInventors: Robert W. Herrick, Charles B. Roxlo, T.H. Ola Sjolund, Tsurugi Sudo
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Patent number: 7567601Abstract: A laser diode having a composite passivation layer configured to control parasitic capacitance, especially in high speed laser applications, is disclosed. In one embodiment, a ridge waveguide laser is disclosed and includes: a substrate, an active layer disposed on the substrate, a ridge structure disposed on the active layer, and a contact layer disposed on the ridge structure. A composite passivation layer is disposed substantially laterally to the ridge structure. The composite passivation layer includes a silicon nitride bottom layer, a silicon nitride top layer, and a silicon dioxide middle layer interposed between the bottom and top layers. The passivation layers possess differing stress components that, when combined, cancel out the overall mechanical stress of the passivation layer. This enables relatively thick passivation layers to be employed in high speed laser diodes without increasing the risk of layer stress cracking and laser damage.Type: GrantFiled: May 15, 2007Date of Patent: July 28, 2009Assignee: Finisar CorporationInventors: Tsurugi Sudo, Ashish Verma, Jing Chai, Sumesh Mani K. Thiyagarajan
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Publication number: 20080206913Abstract: In one example embodiment, a process for cleaving a wafer cell includes several acts. First a wafer cell is affixed to an adhesive film. Next, the adhesive film is stretched substantially uniformly. Then, the adhesive film is further stretched in a direction that is substantially orthogonal to a predetermined reference direction. Next, the wafer cell is scribed to form a notch that is oriented substantially parallel to the predetermined reference direction. Finally, the wafer cell is cleaved at a location substantially along the notch.Type: ApplicationFiled: February 22, 2008Publication date: August 28, 2008Applicant: FINISAR CORPORATIONInventors: Weizhong Sun, Tsurugi Sudo, Jing Chai