Abstract: An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.

Abstract: There is provided a plasma processing apparatus includes a lower electrode in a processing chamber on which a object to be processed is mounted; an upper electrode confronting the lower electrode; a first and a second high-frequency power supply for applying high-frequency powers respectively to the upper and the lower electrode; and an output controller for raising each of outputs from the high-frequency power supplies at least three times in a stepwise manner up to each of set levels for processing the object to be processed. The output controller adjusts each of rising times of the outputs from the high-frequency power supplies so that an output of the second high-frequency power supply is raised earlier than an output of the first high-frequency power supply while the outputs from the high-frequency power supplies are raised up to the set levels in a stepwise manner.

Abstract: An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.

Abstract: A plasma processing apparatus includes a chamber 11 for confining a plasma therein; an electrode 14 to which a power for use in generating the plasma is applied; a power supply 23 for supplying the power; an inner conductor 21 for supplying the power from the power supply 23 to the electrode 14; and an outer conductor 17 surrounding the inner conductor. Each of the chamber 11, the inner conductor 21 and the outer conductor 17 has a shape symmetrical with respect to a central axis which passes through a center of the electrode 14 and is perpendicular to the electrode 14. Further, structures 28, 29, 30 and 31 are symmetrically provided with respect to the central axis in the outer conductor 17, and at least one of the structures is a dummy structure 29 having a same shape as that of one of the other structures.

Abstract: There is provided a plasma processing apparatus includes a lower electrode in a processing chamber on which a object to be processed is mounted; an upper electrode confronting the lower electrode; a first and a second high-frequency power supply for applying high-frequency powers respectively to the upper and the lower electrode; and an output controller for raising each of outputs from the high-frequency power supplies at least three times in a stepwise manner up to each of set levels for processing the object to be processed. The output controller adjusts each of rising times of the outputs from the high-frequency power supplies so that an output of the second high-frequency power supply is raised earlier than an output of the first high-frequency power supply while the outputs from the high-frequency power supplies are raised up to the set levels in a stepwise manner.

Abstract: An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.

Abstract: A frequency control circuit (45) controls an oscillation frequency of a second high frequency power source 51 based on a phase difference between a voltage component and a current component measured by a phase difference sensor (41) and an input impedance to an impedance matching device (34) measured by an impedance sensor (42). An amplitude control circuit (44) controls a level of a high frequency electricity output by the second high frequency power source (51) based on an electricity (effective electricity) which is measured by a power sensor (40) and is to be supplied to the impedance matching device (34).

Abstract: The upper electrode (15a) and the lower electrode (15b) are installed in the chamber (2) in parallel. Between these electrodes, the upper electrode (15a) is electrically grounded. The lower electrode (15b) is connected to the first RF power generator (13) via the low-pass filter (14) and to the second RF power generator (22) via the high-pass filter (23). Wafer W is held against the upper part of the lower electrode (15b) by the high-temperature electrostatic chuck ESC. By being distributed the first and the second RF electric power from the RF power generators (13) and (22), respectively, plasma is produced near the lower electrode (15b), and the wafer W is processed by the plasma. By these procedures, plasma process apparatus with high efficiency in plasma processing and simple structure can be offered.

Abstract: A matching box is provided with a contact device insertion section serving as a slot into which a contact device is inserted. When the matching box is fixed on the outer wall of the side surface of a vacuum container, the matching box is positioned so as to be in a state where a space margin is provided between itself and a power feeding bar. Thereafter, electric contact between the external circuit and the power feeding bar is established by inserting a contact device into the contact device insertion section. A socket 40 provided at the output portion of an impedance matching device has, at the center portion of a metal body 40a formed into a cylindrical structure, an insertion hole 41 for inserting a power feeding bar 32 thereinto to support it A cover layer 42 made of an insulation material is provided on the inner wall of the insertion hole 41, thereby electrically insulating the insertion hole 41 from the power feeding bar 32.

Abstract: A parallel plate type plasma processing apparatus including a RF feed rod for applying a high frequency power to a susceptor and a temperature detection unit for detecting the temperature of a substrate on the susceptor is configured to reduce an effect that high frequency current flowing in the RF feed rod has on temperature detection of the temperature detection unit. A surface portion of the susceptor serves as a mounting unit including an electrostatic chuck and a heater. A shaft, which is a protection pipe extracted downward from the processing chamber, is provided under the mounting unit. A chuck electrode of the electrostatic chuck serves as an electrode for applying a high frequency voltage. Provided in the shaft are two RF feed rod for supplying a power to the electrode and an optical fiber, i.e., a temperature detection unit, having a dielectric fluorescent material is disposed in a leading end thereof.

Abstract: The temperature of a substrate to be processed on a table can be controlled to be at a desired temperature by using a heating method that simplifies the structure inside the table and requires no special heating arrangement. An electrostatic chuck provided on an upper surface of a susceptor includes an electrode portion formed by a conductive plate or film and a pair of dielectric or insulation sheets sandwiching the electrode portion therebetween. A direct-current voltage from a direct-current power supply is applied to the electrode portion via a feed line for electrostatic absorption. A radio-frequency power supply causes the electrode portion of the electrostatic chuck to heat by resistance heating. This affects the temperature of the semiconductor wafer on the susceptor in the heating method, thereby providing control over its temperature.

Abstract: There is provided a plasma processing apparatus includes a lower electrode in a processing chamber on which a object to be processed is mounted; an upper electrode confronting the lower electrode; a first and a second high-frequency power supply for applying high-frequency powers respectively to the upper and the lower electrode; and an output controller for raising each of outputs from the high-frequency power supplies at least three times in a stepwise manner up to each of set levels for processing the object to be processed. The output controller adjusts each of rising times of the outputs from the high-frequency power supplies so that an output of the second high-frequency power supply is raised earlier than an output of the first high-frequency power supply while the outputs from the high-frequency power supplies are raised up to the set levels in a stepwise manner.

Abstract: A plasma processing apparatus includes a chamber 11 for confining a plasma therein; an electrode 14 to which a power for use in generating the plasma is applied; a power supply 23 for supplying the power; an inner conductor 21 for supplying the power from the power supply 23 to the electrode 14; and an outer conductor 17 surrounding the inner conductor. Each of the chamber 11, the inner conductor 21 and the outer conductor 17 has a shape symmetrical with respect to a central axis which passes through a center of the electrode 14 and is perpendicular to the electrode 14. Further, structures 28, 29, 30 and 31 are symmetrically provided with respect to the central axis in the outer conductor 17, and at least one of the structures is a dummy structure 29 having a same shape as that of one of the other structures.

Abstract: A processing system having a processing chamber that includes a substrate holder and an electrode. The processing system can include a pressure control system, gas supply system, and monitoring system. A multi-frequency RF source is coupled to the electrode using a reduced-element matching network having a single variable element. The multi-frequency RF source is set to a first frequency to ignite a plasma and to a second frequency to maintain the plasma.

Abstract: A frequency control circuit (45) controls an oscillation frequency of a second high frequency power source 51 based on a phase difference between a voltage component and a current component measured by a phase difference sensor (41) and an input impedance to an impedance matching device (34) measured by an impedance sensor (42). An amplitude control circuit (44) controls a level of a high frequency electricity output by the second high frequency power source (51) based on an electricity (effective electricity) which is measured by a power sensor (40) and is to be supplied to the impedance matching device (34).

Abstract: A matching box is provided with a contact device insertion section serving as a slot into which a contact device is inserted. When the matching box is fixed on the outer wall of the side surface of a vacuum container, the matching box is positioned so as to be in a state where a space margin is provided between itself and a power feeding bar. Thereafter, electric contact between the external circuit and the power feeding bar is established by inserting a contact device into the contact device insertion section. A socket 40 provided at the output portion of an impedance matching device has, at the center portion of a metal body 40a formed into a cylindrical structure, an insertion hole 41 for inserting a power feeding bar 32 thereinto to support it A cover layer 42 made of an insulation material is provided on the inner wall of the insertion hole 41, thereby electrically insulating the insertion hole 41 from the power feeding bar 32.

Abstract: The upper electrode (15a) and the lower electrode (15b) are installed in the chamber (2) in parallel. Between these electrodes, the upper electrode (15a) is electrically grounded. The lower electrode (15b) is connected to the first RF power generator (13) via the low-pass filter (14) and to the second RF power generator (22) via the high-pass filter (23). Wafer W is held against the upper part of the lower electrode (15b) by the high-temperature electrostatic chuck ESC. By being distributed the first and the second RF electric power from the RF power generators (13) and (22), respectively, plasma is produced near the lower electrode (15b), and the wafer W is processed by the plasma. By these procedures, plasma process apparatus with high efficiency in plasma processing and simple structure can be offered.

Abstract: An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.