Abstract: A thrust foil bearing includes: a base plate including an insertion hole through which a shaft is inserted, and a supporting surface expanding in a direction orthogonal to an axial direction of the insertion hole; a step member placed on the supporting surface and formed of a different body from the base plate; and a back foil extending in a circumferential direction of the insertion hole and in which one part of the back foil is supported by the supporting surface and another part of the back foil next to the one part in the circumferential direction is supported by the step member.

Abstract: The purpose of the present invention is to provide a thermoelectric conversion element having a film which not only maintains sufficient adhesion even when exposed to a high temperature but also exhibits excellent oxidation resistance and crack resistance. The problem is solved by a thermoelectric conversion element including a thermoelectric conversion component, in which the thermoelectric conversion component contains magnesium silicide and/or manganese silicide and is covered with a film containing Si and Zr.

Abstract: Polycrystalline magnesium silicide containing only carbon as a dopant and having carbon distributed at the crystal grain boundaries and within the crystal grains, a thermoelectric conversion material obtained using the polycrystalline magnesium silicide, a sintered compact, a thermoelectric conversion element, and a thermoelectric conversion module, and methods for producing polycrystalline magnesium silicide and a sintered compact.

Abstract: A rotary machine includes a rotary shaft with an axial disc; an axial magnetic bearing which supports the rotary shaft; a motor which rotates the rotary shaft; a turbine impeller mounted on one end portion of the rotary shaft; a compressor impeller mounted on the other end portion; a cooling gas flow passage where a cooling gas for cooling the motor flows; and a housing for at least the motor, the axial magnetic bearing, and the axial disc. The motor includes a rotor unit on the rotary shaft, and a stator unit facing the rotor unit, the axial disc is equipped with a pair of load receiving surfaces sandwiched between the axial magnetic bearings, and the cooling gas flow passage is equipped with a first flow passage between the rotor unit and the stator unit, and a second flow passage extending along at least one of the load receiving surface.

Abstract: A vacuum processing apparatus includes a vacuum processing chamber, an upper electrode, a lower electrode, a first high-frequency power source, a second high-frequency power source, a first matching box, a second matching box, a copper plate for connecting an electrode shaft of the lower electrode with the second matching box, a drive base on which the electrode shaft of the lower electrode and the second matching box are mounted, a drive unit for ascending or descending the drive base, and an exhaust unit disposed at a position equally distanced from an exhaust outlet by a distance.

Abstract: Polycrystalline magnesium silicide containing only carbon as a dopant and having carbon distributed at the crystal grain boundaries and within the crystal grains, a thermoelectric conversion material obtained using the polycrystalline magnesium silicide, a sintered compact, a thermoelectric conversion element, and a thermoelectric conversion module, and methods for producing polycrystalline magnesium silicide and a sintered compact.

Abstract: A vacuum processing apparatus includes a vacuum processing chamber, an upper electrode, a lower electrode, a first high-frequency power source, a second high-frequency power source, a first matching box, a second matching box, a copper plate for connecting an electrode shaft of the lower electrode with the second matching box, a drive base on which the electrode shaft of the lower electrode and the second matching box are mounted, a drive unit for ascending or descending the drive base, and an exhaust unit disposed at a position equally distanced from an exhaust outlet by a distance.

Abstract: A plasma processing method including disposing a wafer to be processed on a sample stage disposed in a processing chamber within a vacuum vessel, supplying an electric field using first high frequency power for plasma forming into the processing chamber and forming plasma, and supplying second high frequency power for bias potential forming to electrodes disposed within the sample stage and processing a film on a top surface of the wafer. At least the first or second high frequency power repeats a change of becoming a plurality of predetermined amplitudes for predetermined periods with a predetermined repetition period. In the processing of the film, supply of the high frequency power is changed by finally increasing a predetermined magnitude of amplitude among the repetition period, ratio of the period, and amplitude of the at least the first or second high frequency power, or first decreasing a predetermined magnitude of the amplitude.

Abstract: A plasma processing apparatus is provided including a processing chamber disposed within a vacuum vessel to form plasma therein, a processing stage disposed in the processing chamber to mount a wafer thereon, a first power supply for outputting an electric field supplied to form the plasma and forming an electric field of a first frequency supplied with repetition of a high output and a low output during processing of the wafer, a second power supply for supplying power of a second frequency to an electrode disposed within the processing stage, and a control device for causing a first value between load impedance at time of the high output of the electric field and load impedance at time of the low output of the electric field to match with impedance of the first power supply.

Abstract: Provided are: an Mg—Si system thermoelectric conversion material which exhibits stably high thermoelectric conversion performance; a sintered body for thermoelectric conversion, which uses this Mg—Si system thermoelectric conversion material; a thermoelectric conversion element having excellent durability; and a thermoelectric conversion module. A method for producing an Mg—Si system thermoelectric conversion material according to the present invention comprises a step for heating and melting a starting material composition that contains Mg, Si, Sb and Zn. It is preferable that the contents of Sb and Zn in the starting material composition are respectively 0.1-3.0 at % in terms of atomic weight ratio.

Abstract: A sheet is produced by curing an energy ray curable composition which includes a urethane acrylate oligomer and a compound having a thiol group in the molecule. The sheet has heat resistance to prevent outgassing.

Abstract: An impeller fastening structure includes a rotating shaft in which an attachment hole is formed on one end along an axis of the rotating shaft, an impeller in which a through hole is formed along an axis of the impeller, a tension bolt which is inserted into the through hole and in which one end is screwed to attachment hole, and a nut which is screwed to the other end of the tension bolt. The tension bolt includes a protruding portion which protrudes in a radial direction at an intermediate portion in a direction of an axis of the bolt, and the rotating shaft includes a receiving portion which comes into contact with a tapered surface the protruding portion on an opening peripheral edge of the attachment hole.

Abstract: A plasma processing method including disposing a wafer to be processed on a sample stage disposed in a processing chamber within a vacuum vessel, supplying an electric field using first high frequency power for plasma forming into the processing chamber and forming plasma, and supplying second high frequency power for bias potential forming to electrodes disposed within the sample stage and processing a film on a top surface of the wafer. At least the first or second high frequency power repeats a change of becoming a plurality of predetermined amplitudes for predetermined periods with a predetermined repetition period. In the processing of the film, supply of the high frequency power is changed by finally increasing a predetermined magnitude of amplitude among the repetition period, ratio of the period, and amplitude of the at least the first or second high frequency power, or first decreasing a predetermined magnitude of the amplitude.

Abstract: A plasma processing apparatus is provided including a processing chamber disposed within a vacuum vessel to form plasma therein, a processing stage disposed in the processing chamber to mount a wafer thereon, a first power supply for outputting an electric field supplied to form the plasma and forming an electric field of a first frequency supplied with repetition of a high output and a low output during processing of the wafer, a second power supply for supplying power of a second frequency to an electrode disposed within the processing stage, and a control device for causing a first value between load impedance at time of the high output of the electric field and load impedance at time of the low output of the electric field to match with impedance of the first power supply.

Abstract: Provided are: an Mg—Si system thermoelectric conversion material which exhibits stably high thermoelectric conversion performance; a sintered body for thermoelectric conversion, which uses this Mg—Si system thermoelectric conversion material; a thermoelectric conversion element having excellent durability; and a thermoelectric conversion module. A method for producing an Mg—Si system thermoelectric conversion material according to the present invention comprises a step for heating and melting a starting material composition that contains Mg, Si, Sb and Zn. It is preferable that the contents of Sb and Zn in the starting material composition are respectively 0.1-3.0 at % in terms of atomic weight ratio.

Abstract: Disclosed is an aluminum-magnesium-silicon composite material that contains an alloy comprising Al, Mg, and Si and can be used favorably as a material for a thermoelectric conversion module, and that has excellent thermoelectric conversion properties. The aluminum-magnesium-silicon composite material contains an alloy comprising Al, Mg and Si, and has an electrical conductivity (?) of 1000-3000 S/cm at 300 K. This aluminum-magnesium-silicon composite material is favorable in the production of a thermoelectric exchange element as a result of having excellent thermoelectric conversion properties.

Abstract: Provided is a heat storage device which can stably store heat by storing heat within a fixed temperature range. A heat storage device (10) of the present invention is characterized in being provided with a heat resistant frame (11), which is filled with one kind of alloy or mixed salt having a predetermined eutectic temperature, alternatively, a heat resistant frame (11), which is filled with two or more kinds of alloys or mixed salts having different eutectic temperatures, by having the alloys or the mixed salts adjacent to each other in the order of eutectic temperature levels with a partitioning wall (11a) therebetween.

Abstract: Disclosed is an aluminum-magnesium-silicon composite material that contains an alloy comprising Al, Mg, and Si and can be used favorably as a material for a thermoelectric conversion module, and that has excellent thermoelectric conversion properties. The aluminum-magnesium-silicon composite material contains an alloy comprising Al, Mg and Si, and has an electrical conductivity (?) of 1000-3000 S/cm at 300 K. This aluminum-magnesium-silicon composite material is favorable in the production of a thermoelectric exchange element as a result of having excellent thermoelectric conversion properties.

Abstract: Provided is a magnesium-silicon composite material which contains Mg2Si as an intermetallic compound imposing no burden on the environment, is suitable for use as a material for thermoelectric conversion modules, and has excellent thermoelectric conversion performance. The magnesium-silicon composite material has a dimensionless figure-of-merit parameter at 866K of 0.665 or larger. This magnesium-silicon composite material can have high thermoelectric conversion performance when used in, for example, a thermoelectric conversion module.

Abstract: Provided is a thermoelectric conversion element which enables improvement in yield and durability, is easy to secure a temperature difference between the both ends and is easy to be bonded to an electrode without tilting, resulting in improvement of mass productivity. Also provided is a thermoelectric conversion module using the thermoelectric conversion element. A thermoelectric conversion element includes: a plurality of pole-shaped parts with one ends of which being electrically connected to a first electrode, and the pole-shaped-parts being arranged at an interval from each other; and a joining/connecting part joining/connecting the other ends of the pole-shaped parts together, and electrically connected to a second electrode. A connecting face of the joining/connecting part, the face being connected to the second electrode, is larger than the sum total of areas of one ends of the pole-shaped parts.