Patents by Inventor Tsutomu Komatani
Tsutomu Komatani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11688773Abstract: Disclosure is a method for manufacturing a semiconductor device. The method includes forming a source electrode and a drain electrode on a nitride semiconductor layer formed on a main surface of a SiC substrate, forming a gate electrode having a laminated structure including a Ni layer and an Au layer on the Ni layer between the source electrode and the drain electrode on the nitride semiconductor layer and forming a first metal film having the same laminated structure as the gate electrode in a region adjacent to the source electrode with an interval therebetween, forming a second metal film to contact with the source electrode and the first metal film, forming a hole being continuous with the first metal film from a back surface of the SiC substrate, and forming a metal via being continuous with the first metal film from the back surface in the hole.Type: GrantFiled: February 14, 2020Date of Patent: June 27, 2023Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.Inventors: Shunsuke Kurachi, Tsutomu Komatani
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Publication number: 20200266275Abstract: Disclosure is a method for manufacturing a semiconductor device. The method includes forming a source electrode and a drain electrode on a nitride semiconductor layer formed on a main surface of a SiC substrate, forming a gate electrode having a laminated structure including a Ni layer and an Au layer on the Ni layer between the source electrode and the drain electrode on the nitride semiconductor layer and forming a first metal film having the same laminated structure as the gate electrode in a region adjacent to the source electrode with an interval therebetween, forming a second metal film to contact with the source electrode and the first metal film, forming a hole being continuous with the first metal film from a back surface of the SiC substrate, and forming a metal via being continuous with the first metal film from the back surface in the hole.Type: ApplicationFiled: February 14, 2020Publication date: August 20, 2020Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.Inventors: Shunsuke KURACHI, Tsutomu Komatani
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Patent number: 9818838Abstract: A method for fabricating a semiconductor device includes: forming a silicon nitride film having a refractive index equal to or larger than 2.2 on a nitride semiconductor layer; and introducing at least one of elements that are oxygen, nitrogen, fluorine, phosphorus, sulfur and selenium into the silicon nitride film, the silicon nitride film including the at least one of elements remaining on the nitride semiconductor layer. The at least one of elements is introduced by a process of exposing the silicon nitride film to plasma including the at least one of elements, a process of ion-implanting the at least one of elements into the silicon nitride film, or a process of thermally diffusing the at least one of elements into the silicon nitride film. The silicon nitride film is formed in contact with a surface of the nitride semiconductor layer.Type: GrantFiled: June 13, 2016Date of Patent: November 14, 2017Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.Inventor: Tsutomu Komatani
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Patent number: 9627222Abstract: A method for fabricating a semiconductor device including: forming a silicon layer on an upper face of a nitride semiconductor layer including a channel layer of a FET; thermally treating the nitride semiconductor layer in the process of forming the silicon layer or after the process of forming the silicon layer; and forming an insulating layer on an upper face of the silicon layer after the process of forming the silicon layer.Type: GrantFiled: January 6, 2016Date of Patent: April 18, 2017Assignees: SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.Inventors: Takeshi Araya, Tsutomu Komatani
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Publication number: 20160293724Abstract: A method for fabricating a semiconductor device includes: forming a silicon nitride film having a refractive index equal to or larger than 2.2 on a nitride semiconductor layer; and introducing at least one of elements that are oxygen, nitrogen, fluorine, phosphorus, sulfur and selenium into the silicon nitride film, the silicon nitride film including the at least one of elements remaining on the nitride semiconductor layer. The at least one of elements is introduced by a process of exposing the silicon nitride film to plasma including the at least one of elements, a process of ion-implanting the at least one of elements into the silicon nitride film, or a process of thermally diffusing the at least one of elements into the silicon nitride film. The silicon nitride film is formed in contact with a surface of the nitride semiconductor layer.Type: ApplicationFiled: June 13, 2016Publication date: October 6, 2016Inventor: Tsutomu Komatani
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Patent number: 9396928Abstract: A method for fabricating a semiconductor device includes: forming a first film on a nitride semiconductor layer so as to contact the nitride semiconductor layer and have a thickness equal to or larger than 1 nm and equal to or smaller than 5 nm, the first film being made of silicon nitride having a composition ratio of silicon to nitrogen larger than 0.75, silicon oxide having a composition ratio of silicon to oxygen larger than 0.5, or aluminum; and forming a source electrode, a gate electrode and a drain electrode on the nitride semiconductor layer.Type: GrantFiled: January 6, 2016Date of Patent: July 19, 2016Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.Inventor: Tsutomu Komatani
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Patent number: 9396927Abstract: A method for fabricating a semiconductor device includes: forming a silicon nitride film having a refractive index equal to or larger than 2.2 on a nitride semiconductor layer; and introducing at least one of elements that are oxygen, nitrogen, fluorine, phosphorus, sulfur and selenium into the silicon nitride film, the silicon nitride film including the at least one of elements remaining on the nitride semiconductor layer. The at least one of elements is introduced by a process of exposing the silicon nitride film to plasma including the at least one of elements, a process of ion-implanting the at least one of elements into the silicon nitride film, or a process of thermally diffusing the at least one of elements into the silicon nitride film. The silicon nitride film is formed in contact with a surface of the nitride semiconductor layer.Type: GrantFiled: December 11, 2013Date of Patent: July 19, 2016Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.Inventor: Tsutomu Komatani
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Publication number: 20160155835Abstract: A semiconductor device includes a semiconductor layer, an insulating film of silicon nitride or silicon oxynitride on the semiconductor layer, source and drain electrodes formed in openings of the insulating film and in contact with the semiconductor layer, and a gate electrode formed in an opening in the insulating film that is located between the source electrode and the drain electrode and formed in contact with the semiconductor layer. The insulating film has an Si content that is uniform in a direction of thickness of the insulating film, an upper region, and a lower region. The upper region can have an oxygen or a nitrogen concentration that is greater than that of the lower region. The upper region can be formed by exposing the surface of the insulating film to ozone, an oxygen plasma or a nitrogen plasma.Type: ApplicationFiled: February 8, 2016Publication date: June 2, 2016Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.Inventor: Tsutomu KOMATANI
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Publication number: 20160118267Abstract: A method for fabricating a semiconductor device including: forming a silicon layer on an upper face of a nitride semiconductor layer including a channel layer of a FET; thermally treating the nitride semiconductor layer in the process of forming the silicon layer or after the process of forming the silicon layer; and forming an insulating layer on an upper face of the silicon layer after the process of forming the silicon layer.Type: ApplicationFiled: January 6, 2016Publication date: April 28, 2016Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.Inventors: Takeshi Araya, Tsutomu Komatani
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Publication number: 20160118240Abstract: A method for fabricating a semiconductor device includes: forming a first film on a nitride semiconductor layer so as to contact the nitride semiconductor layer and have a thickness equal to or larger than 1 nm and equal to or smaller than 5 nm, the first film being made of silicon nitride having a composition ratio of silicon to nitrogen larger than 0.75, silicon oxide having a composition ratio of silicon to oxygen larger than 0.5, or aluminum; and forming a source electrode, a gate electrode and a drain electrode on the nitride semiconductor layer.Type: ApplicationFiled: January 6, 2016Publication date: April 28, 2016Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.Inventor: Tsutomu Komatani
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Patent number: 9299770Abstract: A method for manufacturing a semiconductor device includes: forming a first active region, a second active region, an inactive region located between the first active region and the second active region, and a third active region, which crosses the inactive region to electrically connect the first active region to the second active region, in a semiconductor layer; forming an insulating layer on the semiconductor layer; and forming an opening selectively in the insulating layer by dry etching.Type: GrantFiled: April 24, 2015Date of Patent: March 29, 2016Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.Inventors: Masatoshi Koyama, Kazuaki Matsuura, Tsutomu Komatani
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Patent number: 9287365Abstract: A semiconductor device includes a semiconductor layer, an insulating film of silicon nitride on the semiconductor layer, source and drain electrodes formed in openings of the insulating film and in contact with the semiconductor layer, and a gate electrode formed in an opening in the insulating film that is located between the source electrode and the drain electrode and formed in contact with the semiconductor layer. The insulating film has an Si content that is uniform in a direction of thickness of the insulating film, an upper region, and a lower region. The upper region can have an oxygen concentration that is greater than that of the lower region. The upper region can be formed by exposing the surface of the insulating film to ozone or an oxygen plasma.Type: GrantFiled: May 23, 2014Date of Patent: March 15, 2016Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.Inventor: Tsutomu Komatani
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Patent number: 9263544Abstract: A method for fabricating a semiconductor device including: forming a silicon layer on an upper face of a nitride semiconductor layer including a channel layer of a FET; thermally treating the nitride semiconductor layer in the process of forming the silicon layer or after the process of forming the silicon layer; and forming an insulating layer on an upper face of the silicon layer after the process of forming the silicon layer.Type: GrantFiled: July 15, 2014Date of Patent: February 16, 2016Assignees: SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.Inventors: Takeshi Araya, Tsutomu Komatani
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Publication number: 20150228715Abstract: A method for manufacturing a semiconductor device includes: forming a first active region, a second active region, an inactive region located between the first active region and the second active region, and a third active region, which crosses the inactive region to electrically connect the first active region to the second active region, in a semiconductor layer; forming an insulating layer on the semiconductor layer; and forming an opening selectively in the insulating layer by dry etching.Type: ApplicationFiled: April 24, 2015Publication date: August 13, 2015Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.Inventors: Masatoshi Koyama, Kazuaki Matsuura, Tsutomu Komatani
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Patent number: 9040426Abstract: A method for manufacturing a semiconductor device includes: forming a first active region, a second active region, an inactive region located between the first active region and the second active region, and a third active region, which crosses the inactive region to electrically connect the first active region to the second active region, in a semiconductor layer; forming an insulating layer on the semiconductor layer; and forming an opening selectively in the insulating layer by dry etching.Type: GrantFiled: November 14, 2012Date of Patent: May 26, 2015Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.Inventors: Masatoshi Koyama, Kazuaki Matsuura, Tsutomu Komatani
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Publication number: 20150034960Abstract: A method of manufacturing a semiconductor device is provided as a semiconductor device manufacturing method that permits an opening to be formed in a good shape in a resist film. This manufacturing method is a semiconductor device manufacturing method having: a step of forming an insulating film 22 of any one of silicon nitride, silicon oxide, and silicon oxynitride, on a nitride semiconductor layer 20 or on a silicon carbide layer; a step of performing a treatment of oxidation or nitridation for a surface of the insulating film 22; a step of forming an EB resist film 46 on the insulating film 22, after completion of the treatment of oxidation or nitridation; and a step of irradiating the EB resist film 46 with an electron beam to effect exposure.Type: ApplicationFiled: May 23, 2014Publication date: February 5, 2015Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.Inventor: Tsutomu KOMATANI
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Patent number: 8921950Abstract: A semiconductor device includes a gate electrode formed on a nitride semiconductor layer, and a source electrode and a drain electrode provided on the nitride semiconductor layer so as to interpose the gate electrode therebetween, a first silicon nitride film that covers the gate electrode and the silicon nitride film and has a composition ratio of silicon to nitrogen equal to or larger than 0.75, the first silicon nitride film having compressive stress solely, and a second silicon nitride film that is formed on the first silicon nitride film and has a composition ratio of silicon to nitrogen equal to or larger than 0.75 solely, a whole stacked layer structure of the first and second silicon nitride films having tensile stress.Type: GrantFiled: April 5, 2013Date of Patent: December 30, 2014Assignee: Sumitomo Electric Device Innovations, Inc.Inventors: Tsutomu Komatani, Shunsuke Kurachi
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Publication number: 20140329366Abstract: A method for fabricating a semiconductor device including: forming a silicon layer on an upper face of a nitride semiconductor layer including a channel layer of a FET; thermally treating the nitride semiconductor layer in the process of forming the silicon layer or after the process of forming the silicon layer; and forming an insulating layer on an upper face of the silicon layer after the process of forming the silicon layer.Type: ApplicationFiled: July 15, 2014Publication date: November 6, 2014Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.Inventors: Takeshi Araya, Tsutomu Komatani
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Patent number: 8815664Abstract: A method for fabricating a semiconductor device including: forming a silicon layer on an upper face of a nitride semiconductor layer including a channel layer of a FET; thermally treating the nitride semiconductor layer in the process of forming the silicon layer or after the process of forming the silicon layer; and forming an insulating layer on an upper face of the silicon layer after the process of forming the silicon layer.Type: GrantFiled: July 19, 2011Date of Patent: August 26, 2014Assignees: Sumitomo Electric Industries, Ltd., Sumitomo Electric Device Innovations, Inc.Inventors: Takeshi Araya, Tsutomu Komatani
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Publication number: 20140179078Abstract: A method for fabricating a semiconductor device includes: forming a silicon nitride film having a refractive index equal to or larger than 2.2 on a nitride semiconductor layer; and introducing at least one of elements that are oxygen, nitrogen, fluorine, phosphorus, sulfur and selenium into the silicon nitride film, the silicon nitride film including the at least one of elements remaining on the nitride semiconductor layer. The at least one of elements is introduced by a process of exposing the silicon nitride film to plasma including the at least one of elements, a process of ion-implanting the at least one of elements into the silicon nitride film, or a process of thermally diffusing the at least one of elements into the silicon nitride film. The silicon nitride film is formed in contact with a surface of the nitride semiconductor layer.Type: ApplicationFiled: December 11, 2013Publication date: June 26, 2014Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.Inventor: Tsutomu Komatani