Abstract: The present invention provides a wiring failure analysis method that overcomes difficulties due to shape changes of wires in LSI circuits and the like by effecting current and heat transfer analysis as well as analysis of diffusion of atoms in crystal grain structures. Particularly, the wiring failure analysis method is designed to apply void shape analysis on reservoir portions of aluminum alloy wires coupled with tungsten (W) plugs. First, a structure of a wire to be simulated is created to solve its background field (temperature and current densities) in accordance with the finite element method. Then, diffusion analysis is performed using electron wind power, which is proportional to the current densities, and diffusion coefficients regarding parameters of the crystal grain structure such as the crystal lattice, grain boundary, interface and surface, on which vacancy concentrations are calculated.

Abstract: The present invention provides a wiring failure analysis method that overcomes difficulties due to shape changes of wires in LSI circuits and the like by effecting current and heat transfer analysis as well as analysis of diffusion of atoms in crystal grain structures. Particularly, the wiring failure analysis method is designed to apply void shape analysis on reservoir portions of aluminum alloy wires coupled with tungsten (W) plugs. First, a structure of a wire to be simulated is created to solve its background field (temperature and current densities) in accordance with the finite element method. Then, diffusion analysis is performed using electron wind power, which is proportional to the current densities, and diffusion coefficients regarding parameters of the crystal grain structure such as the crystal lattice, grain boundary, interface and surface, on which vacancy concentrations are calculated.

Abstract: An atomic coordinates generating method generating an atomic coordinate position within a rectangular parallelepiped as an outer frame of a crystal having a predetermined plane orientation derives a sphere circumscribing the rectangular parallelepiped, derives a cubic circumscribing the sphere, generates atomic coordinates within the cubic, provides rotation for the generated atomic coordinates for matching a bottom of the cubic with the plane orientation, checks whether the atomic coordinates after rotation are present within a rectangular parallelepiped having the predetermined plane orientation, and selects only coordinates present within the rectangular parallelepiped.

Abstract: To provide a simulation method of estimating deposition profile of a contact hole with a high-speed, a simulation method of the invention comprises a step of calculating a flux density incident directly from a gas phase onto each surface point of the contact hole making use of an analytical integration, and a step of calculating shape factors for each pair of two surface points of the contact hole describing flux exchange between the two surface point, making use of another analytical integration.

Abstract: This invention provides a process for forming with high selectivity an Al film having good electrical conductivity at the uncoated portions of a substrate coated with a masking material by means of chamical vapor deposition, using an Al selective deposition material having good electrical conductivity without subjecting it preliminarily to cracking, characterized in that the process employs a molecular compound of trimethyl aluminum and dimethyl aluminum hydride as a starting material gas. This invention also provides an Al selective CVD material characterized in that it is an organic Al compound represented by the following formula:(CH.sub.3).sub.3 Al--(CH.sub.3).sub.2 AlHobtained through intermolecular binding between trimethyl aluminum and dimethyl aluminum hydride.

Abstract: This invention provides a process for forming with high selectivity an Al film having good electrical conductivity at the uncoated portions of a substrate coated with a masking material by means of chemical vapor deposition, using an Al selective deposition material having good electrical conductivity without subjecting it preliminarily to cracking, characterized in that the process employs a molecular compound of trimethyl aluminum and dimethyl aluminum hydride as a starting material gas. This invention also provides an Al selective CVD material characterized in that it is an organic Al compound represented by the following formula:(CH.sub.3).sub.3 Al--(CH.sub.3).sub.2 AlHobtained through intermolecular binding between trimethyl aluminum and dimethyl aluminum hydride.