Abstract: According to embodiments, a magnetic memory includes a structure including a first magnetic layer and a conductive layer, a second magnetic layer, a first electrode electrically 5 connected to a first portion of the structure, a second electrode provided between the first magnetic layer and the second, magnetic layer, a third magnetic layer provided insulatingly from a third portion of the structure, a third electrode electrically connected to a second portion of the 10 structure and a sixth magnetic layer provided between the first electrode and the second electrode is provided. In addition, the magnetic memory includes a first semiconductor layer having a first conductivity type electrically connected to the first electrode, a second semiconductor layer having the first conductivity type electrically connected to the third magnetic layer, and a third semiconductor layer having a second conductivity type electrically connected to the first semiconductor layer and the second semiconductor layer.

Abstract: According to one embodiment, a magnetic memory includes a structure body including a first magnetic layer and a conductive layer, a second magnetic layer, a first electrode, a second electrode, a third magnetic layer, an intermediate layer, a third electrode, a fourth magnetic layer, and a circuit element. The first magnetic layer is disposed between the second magnetic layer and the conductive layer. The first electrode is connected to a first portion of the structure body. The intermediate layer is provided between the third magnetic layer and the second magnetic layer. The circuit element includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer. The first semiconductor layer is connected to the first electrode. The second semiconductor layer is connected to the third magnetic layer. The third semiconductor layer is connected to the first semiconductor layer and the second semiconductor layer.

Abstract: Disclosed is an assessment method for making an assessment of laser welding between first and second cylindrical metal members, wherein the first and second cylindrical metal members are arranged coaxially to define an overlap range where the first and second cylindrical metal members overlap each other; and wherein the laser welding is performed on the overlap range along a circumferential direction of the overlap range. The assessment method includes: during the laser welding, carrying out a measurement of a position of a contour of at least one of the first and second cylindrical metal members; and judging the occurrence or non-occurrence of a position deviation of the at least one of the first and second cylindrical metal members based on a result of the measurement.

Abstract: According to one embodiment, a magnetic memory device includes an element unit and a controller. The element unit includes a magnetic member, a first magnetic layer, a second magnetic layer, an intermediate layer, and a non-magnetic layer. The magnetic member includes a first region, a first portion, and a second portion. The first region is provided between the first portion and the second portion, or included in the first portion. The first magnetic layer is apart from the first region in a first direction. The second magnetic layer is provided between the first region and the first magnetic layer. The intermediate layer is provided between the first magnetic layer and the second magnetic layer. The intermediate layer is non-magnetic. The non-magnetic layer is connected with the first region. The controller is configured to supply a writing current and a shift current to the element unit.

Abstract: According to the embodiment, a magnetic memory device includes a magnetic body. The magnetic body includes first and second extending regions, and a first connecting region. The first extending region spreads along a first direction and along a second direction crossing the first direction, and includes first and second end portions extending in the first direction. The second end portion is separated from the first end portion in the second direction. The second extending region spreads along the first direction and along a third direction crossing the first direction, and includes third and fourth end portions extending in the first direction. The fourth end portion is separated from the third end portion in the third direction. The first connecting region is provided between the first and third end portions, and connects the first end portion with the third end portion.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic body and a second magnetic body. The first magnetic body extends in a first direction. The second magnetic body extends in the first direction. A distance between the second magnetic body and the first magnetic body changes periodically along the first direction.

Abstract: According to one embodiment, a magnetic memory element comprises a first magnetic unit, a second magnetic unit, a first insulating unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit includes a plurality of magnetic domains. The second magnetic unit includes a first region and a second region. The first region includes a conductive material. The second region includes an insulating material. At least one of the first region or the second region is magnetic. The first insulating unit is provided between the first magnetic unit and the second magnetic unit. The first electrode and the second electrode are connected to the first magnetic unit. A part of the second magnetic unit and a part of the first insulating unit are provided between the third electrode and a part of the first magnetic unit.

Abstract: According to one embodiment, a magnetic memory element includes a first magnetic unit, a second magnetic unit, a nonmagnetic unit, and a controller. The second magnetic unit includes a first portion and a second portion. The first portion includes a first region and a second region. The controller performs a first operation and a second operation. In the first operation, the controller changes a direction of a magnetization of the first region by causing a first current to flow through the first portion in a first current direction. The first current has a first current value. In the second operation, the controller changes a direction of a magnetization of the second region by causing a second current to flow through the first portion in a second current direction. The second current has a second current value. The second current value is less than the first current value.

Abstract: According to one embodiment, a magnetic memory element comprises a first magnetic unit, a second magnetic unit, a first insulating unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit includes a plurality of magnetic domains. The second magnetic unit includes a first region and a second region. The first region includes a conductive material. The second region includes an insulating material. At least one of the first region or the second region is magnetic. The first insulating unit is provided between the first magnetic unit and the second magnetic unit. The first electrode and the second electrode are connected to the first magnetic unit. A part of the second magnetic unit and a part of the first insulating unit are provided between the third electrode and a part of the first magnetic unit.

Abstract: One embodiment provides a magnetic logic device including: a first conductive thin wire; a second conductive thin wire; and a third conductive thin wire that electrically connects the first conductive thin wire and the second conductive thin wire. The first to third conductive thin wires commonly includes: a first non-magnetic metal layer; a second non-magnetic metal layer; and a magnetic metal layer sandwiched between the first non-magnetic metal layer and the second non-magnetic metal layer.

Abstract: According to one embodiment, a magnetic memory includes a structure body including a first magnetic layer and a conductive layer, a second magnetic layer, a first electrode, a second electrode, a third magnetic layer, an intermediate layer, a third electrode, a fourth magnetic layer, and a circuit element. The first magnetic layer is disposed between the second magnetic layer and the conductive layer. The first electrode is connected to a first portion of the structure body. The intermediate layer is provided between the third magnetic layer and the second magnetic layer. The circuit element includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer. The first semiconductor layer is connected to the first electrode. The second semiconductor layer is connected to the third magnetic layer. The third semiconductor layer is connected to the first semiconductor layer and the second semiconductor layer.

Abstract: According to one embodiment, a magnetic memory element includes a first magnetic unit, a second magnetic unit, a nonmagnetic unit, and a controller. The second magnetic unit includes a first portion and a second portion. The first portion includes a first region and a second region. The controller performs a first operation and a second operation. In the first operation, the controller changes a direction of a magnetization of the first region by causing a first current to flow through the first portion in a first current direction. The first current has a first current value. In the second operation, the controller changes a direction of a magnetization of the second region by causing a second current to flow through the first portion in a second current direction. The second current has a second current value. The second current value is less than the first current value.

Abstract: An opening and closing control device of a vehicle cover is configured to control opening and closing of a cover covering a connection part of a vehicle connecting a connection member, and includes a drive unit which performs the opening and closing operation by moving the cover. An operation status detection unit an operation position of the cover, a control unit drives and controls the drive unit so that the cover is set in one of a plurality of positions based on whether the connection member is connected or not, the operation position detected by the operation status detection unit, and the ON/OFF state of the power of the vehicle when a control signal is input from a control switch or a remote key.

Abstract: A magnetic memory element includes a first magnetic unit, a second magnetic unit, a third magnetic unit, a read/write unit, a first electrode, a second electrode, a third electrode, a first current source, the second current source. The third magnetic unit is connected to one end in the first direction of the first magnetic unit and one end in the first direction of the second magnetic unit. The read/write unit includes a nonmagnetic layer and a pinned layer. The nonmagnetic layer is connected to the third magnetic unit. The pinned layer is connected to the nonmagnetic layer. The first current source causes a current to flow between the third electrode and at least one of the first electrode or the second electrode. The second current source causes a current to flow between the first electrode and the second electrode.

Abstract: According to one embodiment, a magnetic memory including a first magnetic unit, a first nonmagnetic unit, a first fixed magnetic unit, a second fixed magnetic unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit extends in a first direction. The first magnetic unit includes a plurality of magnetic domains arranged in the first direction. The first nonmagnetic unit contacts one end of the first magnetic unit. The first fixed magnetic unit is separated from the first magnetic unit. The first fixed magnetic unit contacts the first nonmagnetic unit. The second fixed magnetic unit is separated from the first magnetic unit and the first fixed magnetic unit. The second fixed magnetic unit is in contact with the first nonmagnetic unit. The second fixed magnetic unit is magnetized in a direction different from a magnetization direction of the first fixed magnetic unit.

Abstract: Technical problem to be solved is to provide an energy receiving port device 3 which makes movement of a supply gun 10 to a removing direction during energy supplying impossible only by a lid 5 for opening and closing a receiving port part 4, and improve a situation in which the receiving port part 5 is widely opened during the supplying. The lid 5 for opening and closing the receiving port part 4 comprises a first lid 5a and a second lid 5b that form a plane lid when the lids are closed. An opening and closing device 6a of the first lid 5a and an opening and closing device 6b of the second lid 5b are provided. The supply gun 10 connected to the receiving port 8 is pinched by the first lid 5a and the second lid 5b to make a movement in a removing direction of the supply gun 10 impossible.

Abstract: A magnetic memory device according to an embodiment includes a first magnetic section, a read section, and a write section. The first magnetic section includes an extending portion. The extending portion extends in a first direction. The extending portion has a first interface and a second interface. The extending portion includes magnetic domains arranged along the first direction. Magnetization easy axis of the extending portion is directed along a second direction. The extending portion includes a first region and a second region. The first region contains at least one first element selected from a first group consisting of gadolinium, terbium, dysprosium, neodymium, and holmium. The second region contains at least one second element selected from a second group consisting of iron, cobalt, nickel, boron, silicon, and phosphorus. Concentration of the first element in the second region is lower than concentration of the first element in the first region.

Abstract: A magnetic memory device according to an embodiment includes a first magnetic section, a read section, and a write section. The first magnetic section includes an extending portion. The extending portion extends in a first direction. The extending portion has a first interface and a second interface. The extending portion includes magnetic domains arranged along the first direction. Magnetization easy axis of the extending portion is directed along a second direction. The extending portion includes a first region and a second region. The first region contains at least one first element selected from a first group consisting of gadolinium, terbium, dysprosium, neodymium, and holmium. The second region contains at least one second element selected from a second group consisting of iron, cobalt, nickel, boron, silicon, and phosphorus. Concentration of the first element in the second region is lower than concentration of the first element in the first region.

Abstract: According to one embodiment, a magnetic memory device includes a first memory unit including a first memory array and a first drive unit, a second memory unit including a second memory array and a second drive unit, and a controller. The first memory array includes a first magnetic shift register unit. The second memory array includes a second magnetic shift register unit. The controller subdivides input data into a plurality of one-dimensional bit input arrays. The one-dimensional bit input arrays include a first array and a second array. The controller stores the first array in the first magnetic shift register unit on a last in, first out basis, and stores the second array in the second magnetic shift register unit on a last in, first out basis.

Abstract: According to one embodiment, a magnetic memory element comprises a first magnetic unit, a second magnetic unit, a first insulating unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit includes a plurality of magnetic domains. The second magnetic unit includes a first region and a second region. The first region includes a conductive material. The second region includes an insulating material. At least one of the first region or the second region is magnetic. The first insulating unit is provided between the first magnetic unit and the second magnetic unit. The first electrode and the second electrode are connected to the first magnetic unit. A part of the second magnetic unit and a part of the first insulating unit are provided between the third electrode and a part of the first magnetic unit.