Patents by Inventor Tsuyoshi Shibuya
Tsuyoshi Shibuya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240150309Abstract: An object of the present invention is to provide a compound having an anti-inflammatory activity or a pharmacologically acceptable salt thereof. The solution of the present invention is a compound of general formula (1) or a pharmacologically acceptable salt thereof. wherein the symbols in the formula are defined below: R1: e.g., a C1-C6 alkyl group; R2: a C1-C6 alkyl group; A: e.g., an oxygen atom; and R3: e.g., a C1-C6 alkyl group.Type: ApplicationFiled: November 3, 2023Publication date: May 9, 2024Applicant: Daiichi Sankyo Company, LimitedInventors: Keiji Saito, Katsuyoshi Nakajima, Toru Taniguchi, Osamu Iwamoto, Satoshi Shibuya, Yasuyuki Ogawa, Kazumasa Aoki, Nobuya Kurikawa, Shinji Tanaka, Momoko Ogitani, Eriko Kioi, Kaori Ito, Natsumi Nishihama, Tsuyoshi Mikkaichi, Wataru Saitoh
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Patent number: 7145394Abstract: A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).Type: GrantFiled: April 5, 2005Date of Patent: December 5, 2006Assignees: Renesas Technology Corp., Hitachi Tohbu Semiconductor, Ltd.Inventors: Masahito Numanami, Hitoshi Akamine, Tsuyoshi Shibuya, Tetsuaki Adachi, Masatoshi Morikawa, Yasuhiro Nunogawa
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Patent number: 7113034Abstract: The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.Type: GrantFiled: May 5, 2005Date of Patent: September 26, 2006Assignee: Renesas Technology Corp.Inventors: Satoshi Arai, Tsuyoshi Shibuya, Hitoshi Sekiguchi, Nobuhiro Matsudaira, Tomio Furuya, Masashi Maruyama, Yasushi Ohyama
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Publication number: 20050208905Abstract: A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).Type: ApplicationFiled: April 5, 2005Publication date: September 22, 2005Inventors: Masahito Numanami, Hitoshi Akamine, Tsuyoshi Shibuya, Tetsuaki Adachi, Masatoshi Morikawa, Yasuhiro Nunogawa
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Publication number: 20050200407Abstract: The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.Type: ApplicationFiled: May 5, 2005Publication date: September 15, 2005Inventors: Satoshi Arai, Tsuyoshi Shibuya, Hitoshi Sekiguchi, Nobuhiro Matsudaira, Tomio Furuya, Masashi Maruyama, Yasushi Ohyama
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Patent number: 6914480Abstract: The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.Type: GrantFiled: May 19, 2004Date of Patent: July 5, 2005Assignee: Renesas Technology Corp.Inventors: Satoshi Arai, Tsuyoshi Shibuya, Hitoshi Sekiguchi, Nobuhiro Matsudaira, Tomio Furuya, Masashi Maruyama, Yasushi Ohyama
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Patent number: 6897728Abstract: A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).Type: GrantFiled: July 8, 2003Date of Patent: May 24, 2005Assignees: Renesas Technology Corp., Hitachi Tohbu Semiconductor, Ltd.Inventors: Masahito Numanami, Hitoshi Akamine, Tsuyoshi Shibuya, Tetsuaki Adachi, Masatoshi Morikawa, Yasuhiro Nunogawa
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Publication number: 20040212435Abstract: The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.Type: ApplicationFiled: May 19, 2004Publication date: October 28, 2004Applicant: Renesas Technology Corp.Inventors: Satoshi Arai, Tsuyoshi Shibuya, Hitoshi Sekiguchi, Nobuhiro Matsudaira, Tomio Furuya, Masashi Maruyama, Yasushi Ohyama
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Patent number: 6753735Abstract: The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.Type: GrantFiled: November 15, 2002Date of Patent: June 22, 2004Assignee: Renesas Technology Corp.Inventors: Satoshi Arai, Tsuyoshi Shibuya, Hitoshi Sekiguchi, Nobuhiro Matsudaira, Tomio Furuya, Masashi Maruyama, Yasushi Ohyama
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Patent number: 6741125Abstract: The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.Type: GrantFiled: January 8, 2003Date of Patent: May 25, 2004Assignee: Hitachi, Ltd.Inventors: Satoshi Arai, Tsuyoshi Shibuya, Hitoshi Sekiguchi, Nobuhiro Matsudaira, Tomio Furuya, Masashi Maruyama, Yasushi Ohyama
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Publication number: 20040012445Abstract: A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).Type: ApplicationFiled: July 8, 2003Publication date: January 22, 2004Applicants: Hitachi, Ltd., Hitachi Tohbu Semiconductor, Ltd.Inventors: Masahito Numanami, Hitoshi Akamine, Tsuyoshi Shibuya, Tetsuaki Adachi, Masatoshi Morikawa, Yasuhiro Nunogawa
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Patent number: 6617927Abstract: A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).Type: GrantFiled: April 16, 2002Date of Patent: September 9, 2003Assignees: Hitachi, Ltd., Hitachi Tohbu Semiconductor, Ltd.Inventors: Masahito Numanami, Hitoshi Akamine, Tsuyoshi Shibuya, Tetsuaki Adachi, Masatoshi Morikawa, Yasuhiro Nunogawa
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Publication number: 20030137347Abstract: The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.Type: ApplicationFiled: January 8, 2003Publication date: July 24, 2003Applicant: Hitachi, Ltd.Inventors: Satoshi Arai, Tsuyoshi Shibuya, Hitoshi Sekiguchi, Nobuhiro Matsudaira, Tomio Furuya, Masashi Maruyama, Yasushi Ohyama
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Publication number: 20030107433Abstract: The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.Type: ApplicationFiled: November 15, 2002Publication date: June 12, 2003Inventors: Satoshi Arai, Tsuyoshi Shibuya, Hitoshi Sekiguchi, Nobuhiro Matsudaira, Tomio Furuya, Masashi Maruyama, Yasushi Ohyama
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Publication number: 20030032396Abstract: The invention is provided to improve the power efficiency of a power amplifier circuit of a wireless communication system having an output transistor that operates in saturation operation mode and linear operation mode. The invention provides an electronic apparatus (module) used for a wireless communication system in which at least an output power amplifiers and an impedance matching circuit are mounted on one insulating substrate and the impedance of the output terminal of the impedance matching circuit is set to 50&OHgr;, wherein a switching circuit that changes the circuit constant of the impedance matching circuit or the high frequency impedance value in view of the impedance matching circuit side from the output power amplifier depending on the operation condition is provided at the point of the impedance lower than the impedance of the output terminal in the impedance marching circuit.Type: ApplicationFiled: June 20, 2002Publication date: February 13, 2003Inventors: Masahiro Tsuchiya, Tsuyoshi Shibuya, Katsuhisa Yabe, Kazuhiro Takahashi
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Publication number: 20020109549Abstract: A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).Type: ApplicationFiled: April 16, 2002Publication date: August 15, 2002Applicant: Hitachi, Ltd.Inventors: Masahito Numanami, Hitoshi Akamine, Tsuyoshi Shibuya, Tetsuaki Adachi, Masatoshi Morikawa, Yasuhiro Nunogawa
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Patent number: 6433639Abstract: A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the, EDGE (for a linear amplifying action).Type: GrantFiled: November 22, 2000Date of Patent: August 13, 2002Assignees: Hitachi, Ltd., Hitachi Tohbu Semiconductor, Ltd.Inventors: Masahito Numanami, Hitoshi Akamine, Tsuyoshi Shibuya, Tetsuaki Adachi, Masatoshi Morikawa, Yasuhiro Nunogawa
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Patent number: 5574993Abstract: A mobile communication apparatus is provided, in which the linearity during a small output power of a radio-frequency power amplifier can be maintained as during a large output power. The input signal power to a radio-frequency power amplifier is decreased by an attenuator during a small power output. The resulting downward trend of the transmission signal power is compensated for by increasing the gain of the radio-frequency amplifier circuit through a transmission power control circuit. Under this condition, the radio-frequency power amplifier is made operable in a linear region of the transistor in the same manner as during a large power output. As a result, the linearity of the amplifier is guaranteed over the whole operating range of the transmission power.Type: GrantFiled: September 19, 1994Date of Patent: November 12, 1996Assignees: Hitachi, Ltd., Hitachi Tohbu Semiconductor, Ltd.Inventors: Kunio Kobayashi, Tetsuaki Adachi, Tsuyoshi Shibuya
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Patent number: 4855633Abstract: A piezo-electric actuator magnifies piezoelectric displacement through two-steps, provided by a first lever portion and a second lever portion which are connected by two plate springs. One of the plate springs transmits a tension force while the other plate spring located adjacent to the first plate spring works as a fulcrum. A higher magnifying power of displacement is obtained.Type: GrantFiled: July 25, 1988Date of Patent: August 8, 1989Assignee: Tokyo Juki Industrial Co., Ltd.Inventor: Tsuyoshi Shibuya
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Patent number: 4777398Abstract: A displacement transmitting apparatus comprising a shaft hole which throttles by piezoelectric effect, and a shaft slidably inserted into the shaft hole engaged with a driving means which advances steppingly by mechanically amplified piezoelectric effect. On-off controlling of electric voltage for the displacement transmitting apparatus and the driving means causes the shaft to advance or conversely causes the driving means to advance where the shaft is fixed.Type: GrantFiled: May 8, 1987Date of Patent: October 11, 1988Assignee: Tokyo Juki Industrial Co., Ltd.Inventor: Tsuyoshi Shibuya