Abstract: The present disclosure relates to a method for cleaning one or more chamber components having contaminants. The method includes introducing a gas mixture to a remote plasma source, the gas mixture includes argon, an oxygen-containing gas and a nitrogen-containing gas. The argon to oxygen gas ratio in the gas mixture is about 0.2:1 to about 1:1 by volume. A plasma is formed from the gas mixture in the remote plasma source. The plasma includes oxygen radicals, argon radicals, and nitrogen radicals. The plasma is introduced to a process volume of the process chamber and exposes surfaces of one or more chamber components. The process volume of the process chamber has a pressure of about 10 mTorr to about 6 Torr and a temperature above 300° C.

Abstract: Embodiments of the present invention relate to apparatus and methods for loading substrates into processing chambers, processing the substrates in the processing chamber, and transferring the substrates out of the processing chamber using a single lift and rotational mechanism. One embodiment of the present invention provides a method for processing one or more substrates. The method includes transferring a substrate carrier, having one or more substrates disposed thereon, to a chamber volume, supporting the substrate carrier within the chamber volume using a set of lift pins, transferring the substrate carrier from the set of lift pins to an edge ring within the chamber volume, and contacting the edge ring with the set of lift pins to control the position of the substrate carrier within the chamber volume.

Abstract: Embodiments of the present invention generally relate to an apparatus and methods for uniformly heating substrates in a processing chamber. In one embodiment, an apparatus generally includes a substrate supporting structure that is able to help minimize the temperature variation across each of the substrates during thermal processing. In one configuration, a substrate supporting structure is adapted to selectively support a substrate carrier to control the heat lost from regions of each of the substrates disposed on the substrate carrier. The substrate supporting structure is thus configured to provide a uniform temperature profile across each of the plurality of substrates during processing.