Abstract: Disclosed is a method and device for compensating a bias voltage on a wafer disposed over an electrostatic chuck in a processing chamber of a plasma processing system. The plasma processing system includes an electrostatic and RF power supplies that are coupled to the electrostatic chuck. The bias compensation device includes a voltage converter, a storage unit, and a voltage adjusting circuitry. The voltage converter is coupled to the electrostatic chuck for detecting a voltage Vpp of the electrostatic chuck. The voltage converter converts the detected voltage to a lower voltage Vref. The storage unit stores a predetermined slope and a predetermined offset of a calibration curve, which is derived by fitting a plurality of wafer bias voltages as a function of electrostatic chuck voltages.

Abstract: A wafer handling method and apparatus insures proper centering of a wafer at a work station and controls the heat transferred to the wafer in a baking operation. The amount of heat transferred and the rate at which the heat is transferred to the wafer are regulated by controlling the distance between the wafer and a hot plate. The hot plate is maintained at a constant temperature higher than the bake out or equilibrium temperature to which the wafer is to be heated.