Abstract: A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the apparatus is a pulsing plasma source that is capable of either exciting or not-exciting a first precursor. The pulsing plasma source includes an energy source to generate a plasma, and a plasma adjusting system to cause the plasma to either excite or not-excite a precursor. The precursor could flow continuously (an aspect totally new to ALD), or intermittently (or pulsing, standard ALD operation process). The deposition method includes the steps of pulsing the plasma to excite/not-excite the precursors and the ambient to deposit and modify the deposited layers. This procedure then can be repeated until the film reaches the desired thickness.

Abstract: A multi-thermal zone shielding apparatus provides a multi-zone temperature profile for the shield while shielding a portion of a hot workpiece in a high temperature processing system. The apparatus keeps the workpiece temperature hot at the shielded area and maintains the rest of the shield at a lower temperature. The apparatus includes a multi-thermal zone shield having a low thermal transmissivity section for preventing heat loss from the shielded portion of the hot workpiece due to less thermal energy being transmitted through the shielding portion of the shield, thus maintaining a more uniform temperature at the shielded portion of the workpiece, and a high thermal transmissivity section in the rest of shield for allowing more thermal energy from the hot workpiece to be transmitted through the shield without heating the shield, thus maintaining a lower temperature at the portion of the shield that is not engaged with the workpiece.

Abstract: A dual format medium can receive and store information in two formats, a printed text format and an electronic format for machine recognition. The dual format medium includes a printable surface for showing the text in a visual format and a data storage section for receiving and storing essentially the same information in an electronic format. The dual format medium allows the rapid and accurate processing of information transfer.

Abstract: This invention discloses a releasable adhesion layer having good adhesion during high temperature fabrication process in the absence of light, and delaminating at a lower temperature in the presence of light. One embodiment of this invention is a film of polymer whose thermal decomposition temperature changes drastically upon photoexposure. These materials, prior to photoexposure, can withstand temperatures in the range of approximately 200° C. to 300° C. without decomposition, yet decompose at around 100° C. with photoexposure. The releasable adhesion layer can be used in a thermal transfer element, sandwiching a donor substrate and a transfer layer having a plurality of multicomponent transfer units. In the absence of light, the releasable adhesion layer can sustain high temperature processing of these multicomponent transfer units. By photoexposing according to a pattern, the photoexposed multicomponent transfer units can be selectively released at a low temperature to transfer to a receptor.

Abstract: This invention discloses a releasable adhesion layer having good adhesion during high temperature fabrication process in the absence of light, and delaminating at a lower temperature in the presence of light. One embodiment of this invention is a film of polymer whose thermal decomposition temperature changes drastically upon photoexposure. These materials, prior to photoexposure, can withstand temperatures in the range of approximately 200° C. to 300° C. without decomposition, yet decompose at around 100° C. with photoexposure. The releasable adhesion layer can be used in a thermal transfer element, sandwiching a donor substrate and a transfer layer having a plurality of multicomponent transfer units. In the absence of light, the releasable adhesion layer can sustain high temperature processing of these multicomponent transfer units. By photoexposing according to a pattern, the photoexposed multicomponent transfer units can be selectively released at a low temperature to transfer to a receptor.

Abstract: This invention discloses a releasable adhesion layer having good adhesion during high temperature fabrication process in the absence of light, and delaminating at a lower temperature in the presence of light. One embodiment of this invention is a film of polymer whose thermal decomposition temperature changes drastically upon photoexposure. These materials, prior to photoexposure, can withstand temperatures in the range of approximately 200° C. to 300° C. without decomposition, yet decompose at around 100° C. with photoexposure. The releasable adhesion layer can be used in a thermal transfer element, sandwiching a donor substrate and a transfer layer having a plurality of multicomponent transfer units. In the absence of light, the releasable adhesion layer can sustain high temperature processing of these multicomponent transfer units. By photoexposing according to a pattern, the photoexposed multicomponent transfer units can be selectively released at a low temperature to transfer to a receptor.

Abstract: A process to deposit a thin film by chemical vapor deposition includes evacuating a chamber of gases; exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of monolayers in thickness; evacuating the chamber of gases; exposing the device, coated with the first reactant, to a gaseous second reactant under a plasma treatment, wherein the thin film is treated by the first reactant; and repeating the previous steps.

Abstract: A visual indicator cold trapping system is provided to allows the visual inspection of the adequacy of a cold trap. The cold trapping system includes a hollow transparent connector operatively connected to the input of the cold trap whereby a visual indication of material collected at the transparent connector shows that there is a problem at the upstream flow of the cold trap. Alternatively, the cold trapping system includes a hollow transparent connector operatively connected to the output of the cold trap whereby a visual indication of material collected at the transparent connector shows that there is a problem at the downstream flow of the cold trap.

Abstract: A multilayer copper structure has been provided for improving the adhesion of copper to a diffusion barrier material, such as TiN, in an integrated circuit substrate. The multilayer copper structure comprises a thin high-resistive copper layer to provide improved adhesion to the underlying diffusion barrier layer, and a low-resistive copper layer to carry the electrical current with minimum electrical resistance. The invention also provides a method to form the multilayer copper structure.

Abstract: A multilayered copper structure has been provided for improving the adhesion of copper to a diffusion barrier material, such as TiN, in an integrated circuit substrate. The multilayered copper structure comprises a thin high-resistive copper layer to provide improved adhesion to the underlying diffusion barrier layer, and a low-resistive copper layer to carry the electrical current with minimum electrical resistance. The invention also provides a method to form the multilayered copper structure.

Abstract: A method for protecting an organic polymer underlayer during a plasma assisted process of depositing a subsequent film on the organic polymer underlayer is disclosed. The method provides the deposition of a protective continuous layer using organic polymer damage-free technique in order to not damage the organic polymer underlayer and to protect the organic polymer underlayer during the plasma assisted process of depositing a subsequent film. The organic polymer damage-free technique is a non-plasma process, using only thermal energy and chemical reactions to deposit the continuous layer. The organic polymer damage-free technique can also be a plasma assisted process using a reduced plasma power low enough in order to not damage the organic polymer underlayer.

Abstract: A method for improving the adhesion of a impermeable film on a porous low-k dielectric film in an interconnect structure is disclosed. The method provides an in-situ annealing step before the deposition of the impermeable film to release the volatile trapped molecules such as water, alcohol, HCl, HF vapor, inside the pores of the porous low-k dielectric film. The method also provides an in-situ deposition step of the impermeable film right after the deposition of the porous low dielectric film without exposure to an atmosphere containing trappable molecules. The method further provides an in-situ deposition step of the impermeable film right after the removal a portion of the porous low-k dielectric film without exposure to an atmosphere containing trappable molecules. By the removal of all trapped molecules inside the porous low-k dielectric film, the adhesion between the deposited impermeable film and the low-k dielectric film is improved.

Abstract: A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The nanolayer deposition process is a cyclic sequential deposition process, comprising the first step of introducing a first plurality of precursors to deposit a thin film with the deposition process not self limiting, then a second step of purging the first set of precursors and a third step of introducing a second plurality of precursors to modify the deposited thin film. The deposition step in the NLD process using the first set of precursors is not self limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already deposited film characteristics. The second set of precursors can treat the deposited film such as a modification of film composition, a doping or a removal of impurities from the deposited film. The second set of precursors can also deposit another layer on the deposited film.

Abstract: A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the present invention apparatus is a pulsing plasma source capable of either exciting or not-exciting a first precursor. The pulsing plasma source includes an energy source to generate a plasma, and a plasma adjusting system to cause the plasma to either excite or not-excite a precursor. The precursor could flow continuously (an aspect totally new to ALD), or intermittently (or pulsing, standard ALD operation process). The present invention further provides a method to deposit highly controlled layered film on a workpiece. The method comprises the steps of pulsing the plasma to excite/not-excite the precursors and the ambient to deposit and modify the depositing layers. This procedure then can be repeated alternately until the film reaches a desired thickness.

Abstract: A process to deposit a thin film by chemical vapor deposition includes evacuating a chamber of gases; exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of monolayers in thickness; evacuating the chamber of gases; exposing the device, coated with the first reactant, to a gaseous second reactant under a plasma treatment, wherein the thin film is treated by the first reactant; and repeating the previous steps.

Abstract: An apparatus for sequential processing of a workpiece comprises an assembly line processing system. The apparatus comprises multiple workpieces moving in an assembly line fashion under multiple process stations. The multiple process stations provide different processes onto the workpieces for a sequential processing of the workpieces. The sequential processing action is carried out by the movement of the workpieces under the various process stations.

Abstract: A wafer transfer apparatus provides a rotational and translational motions using only one stationary motor drive. The apparatus includes a drive assembly and a transport arm assembly. The transport arm assembly includes a transport arm rotatably attached to a linking arm. The linking arm is fixedly attached to a sleeve, which is rotatably attached to a housing. A shaft runs axially through the sleeve, and coupled with the transport arm so that rotation of the sleeve relative to the shaft causes the movement of the transport arm assembly. A locking mechanism allows the shaft to be locked to the housing or to the sleeve. A motor fixedly attached to the housing and operational attached to the sleeve. When the shaft is locked to the sleeve, the motor rotates the sleeve and the shaft simultaneously, which effects rotation of the transfer arm relative to the housing.

Abstract: An apparatus for sequential processing of a workpiece comprises an assembly line processing system. The apparatus comprises multiple workpieces moving in an assembly line fashion under multiple process stations. The multiple process stations provide different processes onto the workpieces for a sequential processing of the workpieces. The sequential processing action is carried out by the movement of the workpieces under the various process stations.

Abstract: An apparatus for sequential and isolated processing of a workpiece comprises a two compartment chamber and a mechanism to transfer the workpiece from one compartment to the other compartment. The transfer mechanism comprises two doors to seal the pathway between the two compartments between movement so that the two compartments are isolated and the workpiece can be processed sequentially and isolatedly in each compartment. The apparatus further comprises components to enable the processing of a workpiece: a delivery system to delivery precursor, a plasma source to generate a plasma and a vacuum pump to maintain a sub-atmospheric pressure. The preferred method of processing a workpiece is to deposit or adsorb a thin layer in the first compartment and then transfer to the second compartment for a reaction or a plasma reaction on the existing thin layer.

Abstract: A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the present invention apparatus is a pulsing plasma source capable of either exciting or not-exciting a first precursor. The pulsing plasma source includes an energy source to generate a plasma, and a plasma adjusting system to cause the plasma to either excite or not-excite a precursor. The precursor could flow continuously (an aspect totally new to ALD), or intermittently (or pulsing, standard ALD operation process). The present invention further provides a method to deposit highly controlled layered film on a workpiece. The method comprises the steps of pulsing the plasma to excite/not-excite the precursors and the ambient to deposit and modify the depositing layers. This procedure then can be repeated alternately until the film reaches a desired thickness.