Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a gate structure disposed on the substrate. The semiconductor device also includes a source region and a drain region disposed within the substrate. The substrate includes a drift region laterally extending between the source region and the drain region. The semiconductor device further includes a first stressor layer disposed over the drift region of the substrate. The first stressor layer is configured to apply a first stress to the drift region of the substrate. In addition, the semiconductor device includes a second stressor layer disposed on the first stressor layer. The second stressor layer is configured to apply a second stress to the drift region of the substrate, and the first stress is opposite to the second stress.

Abstract: A low temperature coefficient oscillator including a current generator, a first and a second voltage generator, an amplifier, a resistor, a switch, a capacitor and an oscillating unit is provided. The current generator generates a first through a fourth current according to a control signal. The first voltage generator generates a first voltage according to the first current. The second voltage generator generates a second voltage according to the second current and a frequency signal. The amplifier generates the control signal according the first and second voltages. The resistor is coupled between a first terminal of the switch and ground, and a first terminal thereof receives the third current. The switch is conducted or not according the frequency signal. The capacitor is coupled between a second terminal of the switch and ground. The oscillating unit generates the frequency signal according to the fourth current and a voltage of the capacitor.

Abstract: A low temperature coefficient oscillator including a current generator, a first and a second voltage generator, an amplifier, a resistor, a switch, a capacitor and an oscillating unit is provided. The current generator generates a first through a fourth current according to a control signal. The first voltage generator generates a first voltage according to the first current. The second voltage generator generates a second voltage according to the second current and a frequency signal. The amplifier generates the control signal according the first and second voltages. The resistor is coupled between a first terminal of the switch and ground, and a first terminal thereof receives the third current. The switch is conducted or not according the frequency signal. The capacitor is coupled between a second terminal of the switch and ground. The oscillating unit generates the frequency signal according to the fourth current and a voltage of the capacitor.

Abstract: A fast-setting DC offset removal circuit with continuous cutoff frequency switching is disclosed. In the preferred embodiment, the circuit is implemented using a pair of RC filters for receiving a differential signal pair and a continuous, variable resistance control circuit. The control circuit can be current-controlled or voltage controlled to provide fast settling of the received signal and the removal of the DC offset components. Additionally, by using a current-controlled control circuit, the cutoff frequency of the RC filter can be ramped from high to low in a continuous manner, thereby minimizing the generation of DC offsets.