Patents by Inventor Tuo-Chuan Huang

Tuo-Chuan Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Cleaning of multicompositional etchant residues
    Patent number: 6852242
    Abstract: A substrate processing apparatus has a chamber with a substrate transport to transport a substrate onto a substrate support in the chamber, a gas supply to provide a gas in the chamber, a gas energizer to energize the gas, and a gas exhaust to exhaust the gas. A controller operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set etching process conditions in the chamber to etch a plurality of substrates, thereby depositing etchant residues on surfaces in the chamber. The controller also operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set cleaning process conditions in the chamber to clean the etchant residues. The cleaning process conditions comprise a volumetric flow ratio of O2 to CF4 of from about 1:1 to about 1:40.
    Type: Grant
    Filed: February 23, 2001
    Date of Patent: February 8, 2005
    Inventors: Zhi-Wen Sun, Anbei Jiang, Tuo-Chuan Huang
  • Cleaning of multicompositional etchant residues
    Publication number: 20020117472
    Abstract: A substrate processing apparatus has a chamber with a substrate transport to transport a substrate onto a substrate support in the chamber, a gas supply to provide a gas in the chamber, a gas energizer to energize the gas, and a gas exhaust to exhaust the gas. A controller operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set etching process conditions in the chamber to etch a plurality of substrates, thereby depositing etchant residues on surfaces in the chamber. The controller also operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set cleaning process conditions in the chamber to clean the etchant residues. The cleaning process conditions comprise a volumetric flow ratio of O2 to CF4 of from about 1:1 to about 1:40.
    Type: Application
    Filed: February 23, 2001
    Publication date: August 29, 2002
    Applicant: Applied Materials, Inc.
    Inventors: Zhi-Wen Sun, Anbei Jiang, Tuo-Chuan Huang