Abstract: An advanced coating for electrostatic chuck used in plasma processing chamber is provided. The advanced coating is formed using plasma enhanced physical vapor deposition. The coating is generally of Y2O3/Al2O3, although other material combinations can be used. Also, a multi-layered coating can be formed, such that an intermediate coating layer can be formed using standard plasma spray, and a top coating can be formed using PEPVD. The entire ESC assembly can be “packaged” by the coating.

Abstract: A system for processing substrates having an atmospheric front end and a vacuum main frame, primary processing chambers attached to the main frame, a loadlock positioned between the front end and the main frame, and at least one secondary processing chamber attached to the loadlock.

Abstract: An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect the flow of the processing gas.

Abstract: An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plraity of gas injectors so as to redirect the flow of the processing gas.

Abstract: The present invention relates to a device of changing the gas flow pattern in the process chamber and a wafer processing method and system; a gas introduced from the gas inlet to the process chamber will process the wafer in the process chamber; a gas center ring is set in the process chamber to adjust the gas flow pattern, which includes a fixed component under the gas inlet and above the wafer, and a movable ring could locate in the first position or the second position respectively; when the movable ring is in the first position, the gas is delivered downwards to the wafer via the first opening set on the fixed component; when the movable ring is in the second position, the gas is delivered downwards to the wafer via the second opening set on the movable ring.

Abstract: A plasma processing method for a plasma processing device is provided. The plasma processing device includes a reaction chamber, multiple Radio Frequency (RF) power supplies with different RF frequency outputs apply RF electric fields to the reaction chamber, the output of at least one pulse RF power supply has multiple output states, and the processing method includes a match frequency obtaining step and a pulse processing step. In the match frequency obtaining step, the output state of the pulse RF power supply is switched to make the reaction chamber have multiple impedances to simulate the impedances in the pulse processing step. The output frequencies of the variable frequency RF power supply are adjusted to match the simulated impedances. The adjusted output frequencies are stored as match frequencies. In the subsequent pulse processing step, the fast switched impedances are instantly matched by the stored match frequencies.

Abstract: A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.

Abstract: A system and method for controlling plasma. The system includes a semiconductor chamber comprising a powered electrode, another electrode, and an adjustable coupling to ground circuit. The powered electrode is configured to receive a wafer or substrate. There is at least one grounded electrode configured to generate an electrical connection with the powered electrode. At least one of the grounded electrodes is electrically coupled to the adjustable coupling to ground circuit. The adjustable coupling to ground circuit is configured to modify the impedance of the grounded electrode. The ion energy of the plasma is controlled by the adjustable coupling to ground circuit.

Abstract: An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect flow of the processing gas.

Abstract: An advanced coating for electrostatic chuck used in plasma processing chamber is provided. The advanced coating is formed using plasma enhanced physical vapor deposition. The coating is generally of Y2O3/Al2O3, although other material combinations can be used. Also, a multi-layered coating can be formed, such that an intermediate coating layer can be formed using standard plasma spray, and a top coating can be formed using PEPVD. The entire ESC assembly can be “packaged” by the coating.

Abstract: An advanced coating for showerhead used in plasma processing chamber is provided. The advanced coating is formed using plasma enhanced physical vapor deposition. The coating formation involved a physical process, such as condensation of source material on the showerhead surface, and chemical process, wherein active species from plasma interact with the condensed source materials. Also, non-reactive species from the plasma impinge on the bottom surface to condense the formed coating.

Abstract: A plasma processing chamber having advanced coating for the showerhead and for an extended bottom electrode. The extended bottom electrode can be formed by one or more of the focus ring, cover ring, and plasma confinement ring. The extended electrode can be formed using a one-piece composite cover ring. The composite cover ring may be made of Al2O3 and include a Y2O3 plasma resistant coating. The plasma confinement ring may include a flow equalization ion shield that may also be provided with the plasma resistant coating. The plasma resistant coating of the extended electrode may have elements matching that of the showerhead.

Abstract: An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plraity of gas injectors so as to redirect the flow of the processing gas.

Abstract: A plasma processing method for a plasma processing device is provided. The plasma processing device includes a reaction chamber, multiple Radio Frequency (RF) power supplies with different RF frequency outputs apply RF electric fields to the reaction chamber, the output of at least one pulse RF power supply has multiple output states, and the processing method includes a match frequency obtaining step and a pulse processing step. In the match frequency obtaining step, the output state of the pulse RF power supply is switched to make the reaction chamber have multiple impedances to simulate the impedances in the pulse processing step. The output frequencies of the variable frequency RF power supply are adjusted to match the simulated impedances. The adjusted output frequencies are stored as match frequencies. In the subsequent pulse processing step, the fast switched impedances are instantly matched by the stored match frequencies.

Abstract: The present disclosure provides a gas supply device used in vacuum processing chambers, which comprises: a first gas source and a second gas source; a first gas switch in which its input is connected to the first gas source and its output can be switchably connected to the gas inlets of two vacuum processing chambers or two processing stations in one vacuum processing chamber; a second gas switch, in which its input is connected to the second gas source and its output can be switchably connected to the gas inlets of the two vacuum processing chambers or the two processing stations; a control device for controlling the switching of the first gas switch and the second gas switch, so as to make the first gas source and the second gas source complementarily switch between two vacuum processing chambers or two processing stations in one vacuum processing chamber.

Abstract: A system and method for controlling plasma. The system includes a semiconductor chamber comprising a powered electrode, another electrode, and an adjustable coupling to ground circuit. The powered electrode is configured to receive a wafer or substrate. There is at least one grounded electrode configured to generate an electrical connection with the powered electrode. At least one of the grounded electrodes is electrically coupled to the adjustable coupling to ground circuit. The adjustable coupling to ground circuit is configured to modify the impedance of the grounded electrode. The ion energy of the plasma is controlled by the adjustable coupling to ground circuit.

Abstract: A system and method for controlling plasma. The system includes a semiconductor chamber comprising a powered electrode, another electrode, and an adjustable coupling to ground circuit. The powered electrode is configured to receive a wafer or substrate. There is at least one grounded electrode configured to generate an electrical connection with the powered electrode. At least one of the grounded electrodes is electrically coupled to the adjustable coupling to ground circuit. The adjustable coupling to ground circuit is configured to modify the impedance of the grounded electrode. The ion energy of the plasma is controlled by the adjustable coupling to ground circuit.

Abstract: The amount of RF power supplied to a plasma in a vacuum plasma processing chamber is gradually changed on a preprogrammed basis in response to signals stored in a computer memory. The computer memory stores signals so that other processing chamber parameters (pressure, gas species and gas flow rates) remain constant while the gradual change occurs. The stored signals enable rounded corners, instead of sharp edges, to be etched, e.g., at an intersection of a trench wall and base.

Abstract: An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect flow of the processing gas.

Abstract: A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.