Abstract: The invention refers to a cross-neutralizing antibody comprising at least one polyspecific binding site that binds to alpha-toxin (Hla) and at least one of the bi-component toxins of Staphylococcus aureus, which antibody comprises at least three complementarity determining regions (CDR1 to CDR3) of the antibody heavy chain variable region (VH), wherein A) the antibody comprises a) a CDR1 comprising or consisting of the amino acid sequence YSISSGMGWG (SEQ ID 1); and b) a CDR2 comprising or consisting of the amino acid sequence SIDQRGSTYYNPSLKS (SEQ ID 2); and c) a CDR3 comprising or consisting of the amino acid sequence ARDAGHGVDMDV (SEQ ID 3); or B) the antibody comprises at least one functionally active CDR variant of a) the parent CDR1 consisting of the amino acid sequence of SEQ ID 1; or b) the parent CDR2 consisting of the amino acid sequence of SEQ ID 2; or c) the parent CDR3 consisting of the amino acid sequence of SEQ ID 3; wherein the functionally active CDR variant comprises at least one point mutati

Abstract: The present invention provides patterned features of dimensions of less than 50 nm on a substrate. According to various embodiments, the features may be “Manhattan” style structures, have high aspect ratios, and/or have atomically smooth surfaces. The patterned features are made from polymer brushes grafted to a substrate. In some embodiments, the dimensions of the features may be determined by adjusting the grafting density and/or the molecular weight of the brushes. Once the brushes are patterned, the features can be shaped and reshaped with thermal or solvent treatments to achieve the desired profiles. The chemical nature of the polymer brush is thus independent of the patterning process, which allows for optimization of the polymer brush used for specific applications. Applications include masks for pattern transfer techniques such as reactive ion etching.

Abstract: The present invention provides patterned features of dimensions of less than 50 nm on a substrate. According to various embodiments, the features may be “Manhattan” style structures, have high aspect ratios, and/or have atomically smooth surfaces. The patterned features are made from polymer brushes grafted to a substrate. In some embodiments, the dimensions of the features may be determined by adjusting the grafting density and/or the molecular weight of the brushes. Once the brushes are patterned, the features can be shaped and reshaped with thermal or solvent treatments to achieve the desired profiles. The chemical nature of the polymer brush is thus independent of the patterning process, which allows for optimization of the polymer brush used for specific applications. Applications include masks for pattern transfer techniques such as reactive ion etching.

Abstract: The present invention provides patterned features of dimensions of less than 50 nm on a substrate. According to various embodiments, the features may be “Manhattan” style structures, have high aspect ratios, and/or have atomically smooth surfaces. The patterned features are made from polymer brushes grafted to a substrate. In some embodiments, the dimensions of the features may be determined by adjusting the grafting density and/or the molecular weight of the brushes. Once the brushes are patterned, the features can be shaped and reshaped with thermal or solvent treatments to achieve the desired profiles. The chemical nature of the polymer brush is thus independent of the patterning process, which allows for optimization of the polymer brush used for specific applications. Applications include masks for pattern transfer techniques such as reactive ion etching.