Patents by Inventor Tyler Growden

Tyler Growden has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Infrared light emitters based on interband tunneling in unipolar doped n-type tunneling structures
    Patent number: 11916162
    Abstract: A unipolar-doped light emitting diode or laser diode is described. The diode includes a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two or more heterojunctions. The top and bottom regions create light emission by interband tunneling-induced photon emission. Systems including the unipolar-doped diode including LIDAR are also taught.
    Type: Grant
    Filed: October 28, 2020
    Date of Patent: February 27, 2024
    Assignee: Wright State University
    Inventors: Elliott R. Brown, Weidong Zhang, Tyler Growden, Paul Berger
  • Gallium nitride cross-gap light emitters based on unipolar-doped tunneling structures
    Patent number: 11342482
    Abstract: Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.
    Type: Grant
    Filed: October 28, 2019
    Date of Patent: May 24, 2022
    Assignees: Wright State University, The Government of the United States of America, As Represented By The Secretary Of The Navy, Ohio State Innovation Foundation
    Inventors: Elliott R. Brown, Weidong Zhang, Tyler Growden, Paul Berger, David Storm, David Meyer
  • INFRARED LIGHT EMITTERS BASED ON INTERBAND TUNNELING IN UNIPOLAR DOPED N-TYPE TUNNELING STRUCTURES
    Publication number: 20220020896
    Abstract: A unipolar-doped light emitting diode or laser diode is described. The diode includes a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two or more heterojunctions. The top and bottom regions create light emission by interband tunneling-induced photon emission. Systems including the unipolar-doped diode including LIDAR are also taught.
    Type: Application
    Filed: October 28, 2020
    Publication date: January 20, 2022
    Inventors: Elliott R. Brown, Weidong Zhang, Tyler Growden, Paul Berger
  • GALLIUM NITRIDE CROSS-GAP LIGHT EMITTERS BASED ON UNIPOLAR-DOPED TUNNELING STRUCTURES
    Publication number: 20200168762
    Abstract: Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.
    Type: Application
    Filed: October 28, 2019
    Publication date: May 28, 2020
    Inventors: Elliott R. Brownj, Weidong Zhang, Tyler Growden, Paul Berger, David Storm, David Meyer
  • Gallium nitride cross-gap light emitters based on unipolar-doped tunneling structures
    Patent number: 10461216
    Abstract: Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.
    Type: Grant
    Filed: September 25, 2017
    Date of Patent: October 29, 2019
    Assignee: Wright State University
    Inventors: Elliott R. Brown, Weidong Zhang, Tyler Growden, Paul R. Berger, David Storm, David Meyer
  • GALLIUM NITRIDE CROSS-GAP LIGHT EMITTERS BASED ON UNIPOLAR-DOPED TUNNELING STRUCTURES
    Publication number: 20190027644
    Abstract: Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.
    Type: Application
    Filed: September 25, 2017
    Publication date: January 24, 2019
    Applicant: Wright State University
    Inventors: Elliott R. Brown, Weidong Zhang, Tyler Growden, Paul R. Berger, David Storm, David Meyer