Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device includes forming nanowire structures stacked over a substrate and spaced apart from one another, and forming a dielectric material surrounding the nanowire structures. The dielectric material has a first nitrogen concentration. The method also includes treating the dielectric material to form a treated portion. The treated portion of the dielectric material has a second nitrogen concentration that is greater than the first nitrogen concentration. The method also includes removing the treating portion of the dielectric material, thereby remaining an untreated portion of the dielectric material as inner spacer layers; and forming the gate stack surrounding nanowire structures and between the inner spacer layers.

Abstract: A semiconductor package includes a first semiconductor die and a second semiconductor die disposed laterally adjacent one another. The semiconductor package includes a semiconductor bridge overlapping a first corner of the first semiconductor die and a second corner of the second semiconductor die. The semiconductor bridge electrically couples the first semiconductor to the second semiconductor die. The semiconductor package includes a third semiconductor die and a fourth semiconductor die electrically coupled to the first semiconductor die and the second semiconductor die, respectively. The semiconductor bridge is interposed between the third semiconductor die and the fourth semiconductor die.

Abstract: A method includes forming a fin structure over a substrate, wherein the fin structure comprises first semiconductor layers and second semiconductor layers alternately stacked over a substrate; forming a dummy gate structure over the fin structure; removing a portion of the fin structure uncovered by the dummy gate structure; performing a selective etching process to laterally recess the first semiconductor layers, including injecting a hydrogen-containing gas from a first gas source of a processing tool to the first semiconductor layers and the second semiconductor layers; and injecting an F2 gas from a second gas source of the processing tool to the first semiconductor layers and the second semiconductor layers; forming inner spacers on opposite end surfaces of the laterally recessed first semiconductor layers of the fin structure; and replacing the dummy gate structure and the first semiconductor layers with a metal gate structure.

Abstract: An integrated circuit (IC) die includes first through third adjacent rows of through-silicon vias (TSVs), and first and second adjacent rows of memory macros. TSVs of the first row of TSVs extend through and are electrically isolated from memory macros of the first row of memory macros. TSVs of the third row of TSVs extend through and are electrically isolated from memory macros of the second row of memory macros.

Abstract: A method for treating an autoimmune neurological disease and/or a neurodegenerative disease is provided. The method includes administering an effective amount of at least one compound having Formula (I), Formula (II) or Formula (III), or its geometric isomer, enantiomer or diastereomer to a subject in need thereof: wherein is a single or double bond, X is NCH3 or CH2, Y is null, O or N, Z is O or N, R1 is H, OH, and R2 is null, H, C1-C8 alkyl, —(C?O)-alkyl, —(C?O)-aryl, —(C?O)-alkyl-aryl, —(C?O)-heteroaryl, cycloalkyl or heterocycloalkyl, which optionally substituted by one or more of —OH, —NO2, —NH2, —NR3R4, carbonyl, alkoxyl, alkyl or —OCF3, wherein R3 and R4 independently are H, alkyl, O2CH3, —(C?O)—CH3 or (C?O)—NH2.

Abstract: A method for treating an autoimmune neurological disease and/or a neurodegenerative disease is provided. The method includes administering an effective amount of at least one compound having Formula (I), Formula (II) or Formula (III), or its geometric isomer, enantiomer or diastereomer to a subject in need thereof: wherein is a single or double bond, X is NCH3 or CH2, Y is null, O or N, Z is O or N, R1 is H, OH, and R2 is null, H, C1-C8 alkyl, —(C?O)-alkyl, —(C?O)-aryl, —(C?O)-alkyl-aryl, —(C?O)-heteroaryl, cycloalkyl or heterocycloalkyl, which optionally substituted by one or more of —OH, —NO2, —NH2, —NR3R4, carbonyl, alkoxyl, alkyl or —OCF3, wherein R3 and R4 independently are H, alkyl, —SO2CH3, —(C?O)—CH3 or —(C?O)—NH2.

Abstract: A method for treating an autoimmune neurological disease and/or a neurodegenerative disease is provided. The method includes administering an effective amount of at least one compound having Formula (I), Formula (II) or Formula (III), or its geometric isomer, enantiomer or diastereomer to a subject in need thereof: wherein is a single or double bond, X is NCH3 or CH2, Y is null, O or N, R1 is H, OH, and R2 is null, H, C1-C8 alkyl, —(C?O)-alkyl, —(C?O)-aryl, —(C?O)-alkyl-aryl, —(C?O)-heteroaryl, cycloalkyl or heterocycloalkyl, which optionally substituted by one or more of —OH, —NO2, —NH2, —NR3R4, carbonyl, alkoxyl, alkyl or —OCF3, wherein R3 and R4 independently are H, alkyl, —SO2CH3, —(C?O)—CH3 or —(C?O)—NH2.