Patents by Inventor Tze-Kwai Kelvin Lai

Tze-Kwai Kelvin Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with self-aligned insulator
    Patent number: 5955767
    Abstract: A semiconductor device having the advantages of an SOI structure without the attendant disadvantages is obtained by implanting oxygen ions using the gate electrode as a mask, and heating to form thin, self-aligned buried oxide regions extending from a field oxide region under source/drain regions self-aligned with the side surfaces of the gate electrode. In other embodiments, the thin buried oxide layer extends from a point in close proximity to the field oxide region and/or partially under the gate electrode.
    Type: Grant
    Filed: August 8, 1997
    Date of Patent: September 21, 1999
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Yowjuang W. Liu, Feng Qian, Tze-Kwai Kelvin Lai
  • Method of making semiconductor device with self-aligned insulator
    Patent number: 5712173
    Abstract: A semiconductor device having the advantages of an SOI structure without the attendant disadvantages is obtained by implanting oxygen ions using the gate electrode as a mask, and heating to form thin, self-aligned buried oxide regions extending from a field oxide region under source/drain regions self-aligned with the side surfaces of the gate electrode. In other embodiments, the thin buried oxide layer extends from a point in close proximity to the field oxide region and/or partially under the gate electrode.
    Type: Grant
    Filed: January 24, 1996
    Date of Patent: January 27, 1998
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Yowjuang W. Liu, Feng Qian, Tze-Kwai Kelvin Lai