Abstract: A method of forming low-k material is provided. The method includes providing a plurality of core-shell particles. The core of the core-shell particles has a first ceramic with a low melting point. The shell of the core-shell particles has a second ceramic with a low melting point and a low dielectric constant. The core-shell particles are sintered and molded to form a low-k material. The shell of the core-shell particles is connected to form a network structure of a microcrystal phase.

Abstract: A method of forming low-k material is provided. The method includes providing a plurality of core-shell particles. The core of the core-shell particles has a first ceramic with a low melting point. The shell of the core-shell particles has a second ceramic with a low melting point and a low dielectric constant. The core-shell particles are sintered and molded to form a low-k material. The shell of the core-shell particles is connected to form a network structure of a microcrystal phase.

Abstract: A cathode layer and a membrane electrode assembly of a solid oxide fuel cell are provided. The cathode layer consists of a plurality of perovskite crystal films, and the average change rate of linear thermal expansion coefficients of these perovskite crystal films is about 5% to 40% along the thickness direction. The membrane electrode assembly includes the above-mentioned cathode layer, and the linear thermal expansion coefficients of these perovskite crystal films are reduced towards the solid electrolyte layer of the membrane electrode assembly.

Abstract: A cathode layer and a membrane electrode assembly of a solid oxide fuel cell are provided. The cathode layer consists of a plurality of perovskite crystal films, and the average change rate of linear thermal expansion coefficients of these perovskite crystal films is about 5% to 40% along the thickness direction. The membrane electrode assembly includes the above-mentioned cathode layer, and the linear thermal expansion coefficients of these perovskite crystal films are reduced towards the solid electrolyte layer of the membrane electrode assembly.

Abstract: A p-type metal oxide semiconductor material is provided, which is composed of AlxGe(1-x)Oy, wherein 0<x?0.6, and 1.0?y?2.0. The p-type metal oxide semiconductor material can be applied in a transistor. The transistor may include a gate electrode, a channel layer separated from the gate electrode by a gate insulation layer, and a source electrode and a drain electrode contacting two sides of the channel layer, wherein the channel layer is the p-type metal oxide semiconductor material.

Abstract: A P-type metal oxide semiconductor material is provided. The P-type metal oxide semiconductor material has a formula of In(1?3)Ga(1?b)Zn(1+a+b)O4, wherein 0?a?0.1, 0?b?0.1, and 0<a+b?0.16. In particular, the P-type metal oxide semiconductor material has a hole carrier concentration of between 1×1011 cm?3 and 5×1018 cm?3.

Abstract: A P-type metal oxide semiconductor material is provided. The P-type metal oxide semiconductor material has a formula of In(1?3)Ga(1?b)Zn(1+a+b)O4, wherein 0?a?0.1, 0?b?0.1, and 0<a+b?0.16. In particular, the P-type metal oxide semiconductor material has a hole carrier concentration of between 1×1011 cm?3 and 5×1018 cm?3.

Abstract: The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula: In1?xGa1?yMx+yZnO4+m, wherein M is Ca, Mg, or Cu, 0<x+y?0.1, 0?m?3, and 0<x, 0?y, or 0?x, 0<y, and wherein a hole carrier concentration of the p-type metal oxide semiconductor material is in a range of 1×1015˜6×1019 cm?3.

Abstract: A lithium ion battery and an electrode structure thereof are provided. The electrode structure at least includes a current collecting substrate, an electrode active material layer on the current collecting substrate, and a complex thermo-sensitive coating layer sandwiched in between the current collecting substrate and the electrode active material layer. The complex thermo-sensitive coating layer at least contains two or more of PTC (positive temperature coefficient) materials so as to have adjustable stepped resistivity according to temperature rise.

Abstract: The disclosure provides a humidity indicator and a method for fabricating the same. The humidity indicator includes a substrate, and a composite disposed on a predetermined region of the substrate. The composite includes a hydrophilic polymer and a Ni-containing compound. The humidity indicators of the disclosure are reusable, halide-free, and cobalt-free, meeting the requirement of environmental friendliness.

Abstract: The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula: In1?xGa1?yMx+yZnO4+m, wherein M is Ca, Mg, or Cu, 0<x+y?0.1, 0?m?3, and 0<x, 0?y, or 0?x, 0<y, and wherein a hole carrier concentration of the p-type metal oxide semiconductor material is in a range of 1×1015˜6×1019 cm?3.

Abstract: The disclosure provides a humidity indicator and a method for fabricating the same. The humidity indicator includes a substrate, and a composite disposed on a predetermined region of the substrate. The composite includes a hydrophilic polymer and a Ni-containing compound. The humidity indicators of the disclosure are reusable, halide-free, and cobalt-free, meeting the requirement of environmental friendliness.