Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.

Abstract: An optical imaging system includes five lens elements, the five lens elements being, in order from an object side to an image side: a first lens element having positive refractive power; a second lens element having negative refractive power; a third lens element having positive refractive power; a fourth lens element having positive refractive power; and a fifth lens element having negative refractive power.

Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.

Abstract: An optical image capturing lens assembly includes six lens elements, the six lens elements being, in order from an object side to an image side: a first lens element with negative refractive power, a second lens element with positive refractive power, a third lens element with negative refractive power, a fourth lens element with positive refractive power, a fifth lens element, and a sixth lens element with negative refractive power.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: An optical engine module including at least two laser sources, collimators, a light combining lens group, an aperture, a beam shaping lens group, a MEMS scanning module, and a beam expansion lens group is provided. The at least two laser sources respectively generate at least two laser beams with different wavelengths. The collimators respectively collimate the at least two laser beams to generate at least two collimated beams. The light combining lens group combines the at least two collimated beams into a combined beam. The aperture filters stray beams of the combined beam. The beam shaping lens group shapes the combined beam to generate a shaped beam with a perfect circle. The MEMS scanning module reflects the shaped beam and scans in horizontal and vertical directions to form a scanning beam. The beam expansion lens group expands the scanning beam into an expanded beam having a predetermined area.

Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.

Abstract: An indirect bonding apparatus has a first positioning member and at least one second positioning member. The first positioning member is made by 3D printing after digital planning and has a body and at least one connecting seat disposed on the body. The at least one second positioning member is detachably inserted into the at least one connecting seat of the first positioning member. Each second positioning member has a guiding seat and a positioning frame. The guiding seat is slidably inserted into the at least one connecting seat. The positioning frame is erectly formed on the guiding seat and is adjacent to a front surface of the guiding seat. A positioning groove is formed between the body and the positioning frame of the at least one second positioning member.

Abstract: An assistant device for percutaneous puncture is disclosed. The assistance device includes a fixing element, a first rotatable element, a supporting element and a second rotatable element. The fixing element has a first rail, and the first rotatable element is slidably disposed on the first rail. The supporting element is connected to the first rotatable element. The second rotatable element is slidably disposed on the supporting element and has a puncture restraint pore.

Abstract: An assistant device for percutaneous puncture is disclosed. The assistance device includes a fixing element, a first rotatable element, a supporting element and a second rotatable element. The fixing element has a first rail, and the first rotatable element is slidably disposed on the first rail. The supporting element is connected to the first rotatable element. The second rotatable element is slidably disposed on the supporting element and has a puncture restraint pore.