Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.

Abstract: The present invention discloses a MOCVD gas diffusion system with gas inlet baffles. With the adoption of multiple detachable air inlet baffles under the MO gas (Metal Organic gas) inlet and the hydride gas inlet, the gas diffusion system can easily and effectively reduce the pre-reaction of the MO gas and the hydride gas near the gas inlets, prevent metal diffusions around the inlets and make the metal layer generated on the wafers on the wafer carrier be very even, the MO gas used is also massively reduced to save great cost. The MOCVD process with the diffusion system of the present invention thus has a great potential in application to productions of high-performance LED epitaxy.

Abstract: A method for programming a multi-level nitride storage memory cell capable of storing different programming states corresponding to multiple different threshold voltage levels includes providing a variable resistance capable of providing a plurality of different resistance values; connecting a drain side of the nitride storage memory cell to a selected one of the plurality of resistance values that corresponds to one of the multiple threshold voltage levels; and programming the nitride storage memory cell to store one of the program states corresponding to the one of the threshold voltage levels by applying a programming voltage to the drain side through the selected resistance.

Abstract: A method for programming a multi-level nitride storage memory cell capable of storing different programming states corresponding to multiple different threshold voltage levels includes providing a variable resistance capable of providing a plurality of different resistance values; connecting a drain side of the nitride storage memory cell to a selected one of the plurality of resistance values that corresponds to one of the multiple threshold voltage levels; and programming the nitride storage memory cell to store one of the program states corresponding to the one of the threshold voltage levels by applying a programming voltage to the drain side through the selected resistance.