Abstract: The current disclosure describes techniques for forming a low resistance junction between a source/drain region and a nanowire channel region in a gate-all-around FET device. A semiconductor structure includes a substrate, multiple separate semiconductor nanowire strips vertically stacked over the substrate, a semiconductor epitaxy region adjacent to and laterally contacting each of the multiple separate semiconductor nanowire strips, a gate structure at least partially over the multiple separate semiconductor nanowire strips, and a dielectric structure laterally positioned between the semiconductor epitaxy region and the gate structure. The first dielectric structure has a hat-shaped profile.

Abstract: The present invention provides a parallel method for packaging an electronic component and coating an adhesive on a carrier tape and a mechanism for same, so as to regulate continuous output of an adhesive and intermittent movement in packaging work, so that during a short pause of placing an electronic component, a continuously output adhesive is prevented from being repeatedly applied at a fixed position of a carrier tape. In this way, excessive application of an adhesive can be avoided, and it can be further ensured that the quality of packaging is not affected by an excessive amount of an adhesive.

Abstract: The present invention provides a parallel method for packaging an electronic component and coating an adhesive on a carrier tape and a mechanism for same, so as to regulate continuous output of an adhesive and intermittent movement in packaging work, so that during a short pause of placing an electronic component, a continuously output adhesive is prevented from being repeatedly applied at a fixed position of a carrier tape. In this way, excessive application of an adhesive can be avoided, and it can be further ensured that the quality of packaging is not affected by an excessive amount of an adhesive.