Abstract: An AI-assisted automatic labeling system and a method thereof are disclosed. The method comprises steps: selecting images from microscopic images as candidate images, using a pre-labeling module to automatically label cells in the candidate images, and dividing the labeled images into training data and verification data; using a training module and the training data to train a basic model; using a verification module to verify and modify the basic model, wherein the verification module respectively verifies at least one cell area and at least one background area of the verification data to converge the basic model and form an automatic labeling model; using the automatic labeling model to automatically label cells in redundant images of the microscopic images. The basic model trained by the present invention can use few labeled images to perform regressive training and verification and then automatically labels the redundant images accurately and efficiently.

Abstract: A memory device includes several normal memory circuits and a redundant memory circuit is disclosed. The several normal memory circuits include several normal memory arrays. The redundant memory circuit includes a redundant memory array. The several normal memory arrays share the redundant memory array. When a first normal memory cell of a first normal memory array of the several normal memory arrays is destructed, a first redundant memory cell of the redundant memory array replaces the first normal memory cell. When a second normal memory cell of a second normal memory array of the several normal memory arrays is destructed, a second redundant memory cell of the redundant memory array replaces the second normal memory cell.

Abstract: A phase change memory and a method of fabricating the same are provided. The phase change memory includes a lower electrode, an annular heater disposed over the lower electrode, an annular phase change layer disposed over the annular heater, and an upper electrode. The annular phase change layer and the annular heater are misaligned in a normal direction of the lower electrode. The upper electrode is disposed over the annular phase change layer, in which the upper electrode is in contact with an upper surface of the annular phase change layer. The present disclosure simplifies the manufacturing process of the phase change memory, reduces the manufacturing cost, and improves the manufacturing yield. In addition, a contact surface between the heater and the phase change layer of the phase change memory of the present disclosure is very small, so that the phase change memory has an extremely low reset current.

Abstract: A memory device includes several normal memory circuits and a redundant memory circuit is disclosed. The several normal memory circuits include several normal memory arrays. The redundant memory circuit includes a redundant memory array. The several normal memory arrays share the redundant memory array. When a first normal memory cell of a first normal memory array of the several normal memory arrays is destructed, a first redundant memory cell of the redundant memory array replaces the first normal memory cell. When a second normal memory cell of a second normal memory array of the several normal memory arrays is destructed, a second redundant memory cell of the redundant memory array replaces the second normal memory cell.

Abstract: A phase change memory and a method of fabricating the same are provided. The phase change memory includes a lower electrode, an annular heater disposed over the lower electrode, an annular phase change layer disposed over the annular heater, and an upper electrode. The annular phase change layer and the annular heater are misaligned in a normal direction of the lower electrode. The upper electrode is disposed over the annular phase change layer, in which the upper electrode is in contact with an upper surface of the annular phase change layer. The present disclosure simplifies the manufacturing process of the phase change memory, reduces the manufacturing cost, and improves the manufacturing yield. In addition, a contact surface between the heater and the phase change layer of the phase change memory of the present disclosure is very small, so that the phase change memory has an extremely low reset current.

Abstract: A phase change memory and a method of fabricating the same are provided. The phase change memory includes a lower electrode, an annular heater, an annular phase change layer, and an upper electrode. The annular heater is disposed over the lower electrode. The annular phase change layer is disposed over the annular heater, and the annular phase change layer and the annular heater are misaligned in a normal direction of the lower electrode. The upper electrode is disposed over the annular phase change layer. The present disclosure simplifies the manufacturing process of the phase change memory, reduces the manufacturing cost, and improves the manufacturing yield. In addition, a contact surface between the heater and the phase change layer of the phase change memory of the present disclosure is very small, so that the phase change memory has an extremely low reset current.

Abstract: A phase change memory and a method of fabricating the same are provided. The phase change memory includes a lower electrode, an annular heater, an annular phase change layer, and an upper electrode. The annular heater is disposed over the lower electrode. The annular phase change layer is disposed over the annular heater, and the annular phase change layer and the annular heater are misaligned in a normal direction of the lower electrode. The upper electrode is disposed over the annular phase change layer. The present disclosure simplifies the manufacturing process of the phase change memory, reduces the manufacturing cost, and improves the manufacturing yield. In addition, a contact surface between the heater and the phase change layer of the phase change memory of the present disclosure is very small, so that the phase change memory has an extremely low reset current.