Patents by Inventor Tzu-Hsuan Chen
Tzu-Hsuan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240170076Abstract: A memory device, such as a 3D AND flash memory, includes a memory cell block, a word line driver, and a plurality of bit line switches. The word line driver has a plurality of complementary transistor pairs for respectively generating a plurality of word line signals for a plurality of word lines. Substrates of a first transistor and a second transistor of each of the complementary transistor pairs respectively receive a first voltage and a second voltage. Each of the bit line switches includes a third transistor. A substrate of the third transistor receives a third voltage. The first voltage, the second voltage, and the third voltage are constant static voltages during a soft program operation and a soft program verify operation.Type: ApplicationFiled: November 17, 2022Publication date: May 23, 2024Applicant: MACRONIX International Co., Ltd.Inventors: Teng-Hao Yeh, Hang-Ting Lue, Tzu-Hsuan Hsu, Chen-Huan Chen, Ken-Hui Chen
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Publication number: 20240162088Abstract: An integrated circuit device includes an interconnect layer, a memory structure, a third conductive feature, and a fourth conductive feature. The interconnect layer includes a first conductive feature and a second conductive feature. The memory structure is over and in contact with the first conductive feature. The memory structure includes at least a resistance switching element over the first conductive feature. The third conductive feature, including a first conductive line, is over and in contact with the second conductive feature. The fourth conductive feature is over and in contact with the memory structure. The fourth conductive feature includes a second conductive line, a top surface of the first conductive line is substantially level with a top surface of the second conductive line, and a bottom surface of the first conductive line is lower than a bottommost portion of a bottom surface of the second conductive line.Type: ApplicationFiled: January 25, 2024Publication date: May 16, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsia-Wei CHEN, Fu-Ting SUNG, Yu-Wen LIAO, Wen-Ting CHU, Fa-Shen JIANG, Tzu-Hsuan YEH
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Publication number: 20240145650Abstract: A package comprises a substrate including a first surface, and an upper conductive layer arranged on the first surface, a first light-emitting unit arranged on the upper conductive layer, and comprises a first semiconductor layer, a first substrate, a first light-emitting surface and a first side wall, a second light-emitting unit, which is arranged on the upper conductive layer, and comprises a second light-emitting surface and a second side wall, a light-transmitting layer arranged on the first surface and covers the upper conductive layer, the first light-emitting unit, and the second light-emitting unit, a light-absorbing layer, which is arranged between the substrate and the light-transmitting layer in a continuous configuration of separating the first light-emitting unit and the second light-emitting unit from each other, and a reflective wall arranged on the first side wall, wherein a height of the reflective wall is lower than that of the light-absorbing layer.Type: ApplicationFiled: January 8, 2024Publication date: May 2, 2024Inventors: Shau-Yi CHEN, Tzu-Yuan LIN, Wei-Chiang HU, Pei-Hsuan LAN, Min-Hsun HSIEH
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Publication number: 20240072210Abstract: A micro light emitting diode structure including an epitaxial structure, a first insulating layer and a second insulating layer is provided. The epitaxial structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The first type semiconductor layer, the light emitting layer and a first portion of the second type semiconductor layer form a mesa. A second portion of the second type semiconductor layer is recessed relative the mesa to form a mesa surface. The first insulating layer covers from a top surface of the mesa to the mesa surface along a first side surface of the mesa, and exposes the second side surface. The second insulating layer directly covers a second side surface of the second portion, wherein a thickness ratio of the first insulating layer to the second insulating layer is between 10 and 50.Type: ApplicationFiled: October 21, 2022Publication date: February 29, 2024Applicant: PlayNitride Display Co., Ltd.Inventors: Chee-Yun Low, Yun-Syuan Chou, Hung-Hsuan Wang, Pai-Yang Tsai, Fei-Hong Chen, Tzu-Yang Lin
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Publication number: 20240009258Abstract: Disclosed herein is an anti-cancer composition that includes an ethanol extract of green propolis, an ethanol extract of wheatgrass, and an ethanol extract of mulberry leaves. Also disclosed herein is use of the anti-cancer composition for inhibiting the growth of cancer cells.Type: ApplicationFiled: January 31, 2023Publication date: January 11, 2024Inventors: Yao-Kuan CHEN, Daniel Tzu-Hsuan CHEN, Hui-Min CHIU
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Publication number: 20200194581Abstract: A semiconductor device includes a semiconductor substrate, a buried layer disposed in the semiconductor substrate, and a first well region, a second well region, a third well region and a fourth well region disposed in the semiconductor substrate on the buried layer. The semiconductor device also includes a source region disposed in the second well region, a drain region disposed in the first well region, a gate structure disposed on the first well region and the second well region, and a deep trench isolation structure disposed in the semiconductor substrate and surrounding the source region and the drain region. The second well region surrounds the first well region. The third well region and the fourth well region are located on opposite sides of the second well region. The deep trench isolation structure penetrates through the buried layer.Type: ApplicationFiled: December 18, 2018Publication date: June 18, 2020Applicant: Vanguard International Semiconductor CorporationInventors: Kai-Chuan KAN, Shu-Wei HSU, Chien-Hsien SONG, Tzu-Hsuan CHEN
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Patent number: 9972534Abstract: A semiconductor device includes a through-substrate via structure, a first metal layer, an electronic component over the through-substrate via structure, a second metal layer and another electronic component below the through-substrate via structure. The through-substrate via structure includes a through hole penetrating from a first surface to an opposite second surface of a semiconductor substrate, and an acute angle is included between a sidewall of the through hole and the second surface on a side of the semiconductor substrate. The through-substrate via structure also includes a conductive layer that fills the through hole, and a semiconductor layer disposed in the through hole and interposed between the conductive layer and the semiconductor substrate.Type: GrantFiled: June 5, 2017Date of Patent: May 15, 2018Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATIONInventors: Li-Che Chen, Tzu-Hsuan Chen, Hsing-Chao Liu
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Patent number: 8123241Abstract: A foldable baby trailer formed of a bottom frame unit, a trailer bar, a rear upright frame, a handle frame, and a folding control mechanism, two side frame bars and a stretcher frame is disclosed. The stretcher frame that supports a fabric seat panel for the sitting of a baby is held in a sloping position with the transverse front tube thereof spaced above the bottom frame unit at a distance so that when a baby is sitting on the fabric seat panel, the legs of the baby will not touch the ground, avoiding an accident and assuring high level of safety. When turning the handle frame backwardly downwards after pressed the operating button of the folding control mechanism, the foldable baby trailer is collapsed, saving storage space.Type: GrantFiled: October 26, 2009Date of Patent: February 28, 2012Inventor: Tzu-Hsuan Chen
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Patent number: D649912Type: GrantFiled: July 15, 2009Date of Patent: December 6, 2011Inventor: Tzu-Hsuan Chen